The influence of

partial pressure on saturation mgnetization, coercivity, anisotropy field and effective permeability (over 1GHz) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The

thin film fabricated at

partial pressure of 4% exhibits the best magnetic softness with saturation magnetization 4

Ms of 18.1 kG, coercivity of 0.82 Oe, anisotropy field (

) of Oe, and effective permeability (

) about 1,024 above 1 GHz. the electrical resistivity of Co-Fe-Al-O thin films were increased with increasing

partial pressure, the electrical resistivity of

thin film with the best soft magnetic properties was 560.7

am. Therefore, It is assumed that the good soft magnetic properties of

thin film results from high electrical resistivity and large anisotropy field.