The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the - bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the - bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

The Self-propagating High-temperature Synthesis (SHS) for synthesizing ( , )was conducted experimentally with the mole fraction of Tungsten(W) from z=0.0 to z=0.5. The temperature profile was measured according to the reaction time through the thermocouple that was equipped into the center of these samples. When the reaction front is propagated around the thermocouple, the highest temperature appears and we regard this temperature as the adiabatic temperature. We found out by experimental results that the reaction velocity is in the range of 2.14~1.35mm/sec and the adiabatic temperature is in the range of 1883~1507K for the six samples. The reaction velocity and the adiabatic temperature were inclined to decrease with an increasing of the mole fraction of Tungsten (W). The SHS modeling is presented in order to predict the temperature profiles and these results are compared with the experimental results. It is predicted that in case of increasing the initial temperature of these six samples, the reaction temperature increased and that the sample of z=0.5 needs the preheating up to 800~900K in order to become reaction temperature 1900K.

The thermal and mechanical properties of amorphous Z N C A (x=3, 6, 9at%) alloys were investigated. The crystallization process was confirmed as amorphous longrightarrow amorphous + Z A + Zr + (Ni,Ti) longrightarrow Z Cu + Al + (Ni,Ti) for 3at%Ti, amorphous longrightarrow amorphous + Al longrightarrow Ti + NiZr + CuTi for 6at%Ti and amorphous longrightarrow amorphous + Zr + Al longrightarrow Zr + Zr + Al + CuTi for 9at%Ti. lickers hardness ( ) increased with increasing volume fraction( ) of pricipitates for all concerned compositions. Tensile fracture strength ( ) showed a maximum value 1219MPa at = 38% for 3at%Ti, 1203MPa at = 2% for 6at%Ti and 1350MPa at = 5% for 9at%Ti. The was rapidly decreased after showing the maximum value. The corresponding to rapidly decreased coincided with the transited from ductile to brittle fracture surface.ace.

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of . The resistivity is increased as the molecular weight of L becomes higher above The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of . The resistivity is increased as the molecular weight of L becomes higher above The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about /V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

M Z O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the Z O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the Z O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the Z O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

The effects of SrTiO addition and sintering temperature on the microstructure and magnetic properties of yttrium iron garnet (YIG) were investigated. The lattice Parameter increasing of sintered YlG with small amount of SrTiO addition was supposed to be substituted , Fe ions to Sr,Ti ions which are relatively large in ionic ranius. A YIG specimen sintered at 142 with 0.2mol% SrTiO showed above 98% densification of theoretical density. Saturation magnetization (M) at room temperature decreased a little bit with increasing SrTiO, addition but no great chance. In addition, the coercivity (H) was almost not changed by sintering temperature.

Silica glass is a core material for optical fiber in optical telecommunications, but its centrosymmetry eliminates the second order nonlinearity. But it is experimentally well known that the space charge polarization induces the Second Harmonic Generation (SHG) when a strong DC voltage is applied to silica glass for a long period of time with metal blocking electrodes. In this report, the results of a theoretical calculation of the nonlinear optical property caused by the space charge polarization, and a model of a numerical analysis to predict the small chance in nonlinear optical property as functions of time and space are provided. Assuming that amorphous silica is a solid state electrolyte and sodium ion is the only mobile charge carrier, 'Finite Difference Method' was employed for modeling of numerical analysis. The distributions of the concentration of sodium ion and electric field as functions of a normalized length of the specimen and a normalized applied voltage were simulated.

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various /Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form CuSi, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and CuSi Peaks appears up to 80. The optimal composition of Ti-Si-N in this study is SiN. The failure temperatures of the SiN barrier layers 200 and 650 thick are 650 and , respectively.ely.

The basal slip (0001)1/3<1120 > dislocation velocity in sapphire (-) single crystals was measured by four-point bending test. The bending experiment was carried out in the temperature range from 120 to at various engineering stresses 90MPa, 120MPa, and 150MPa. The velocity of such dislocations was estimated from the bending displacement rate of the four-point bend sample. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be about 2.20.4eV. In addition, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 2.00.2.

In this work, ZnSiO:Mn phosphors were prepared by solid state reaction. The effect of sintering/reduction temperature, flow rate of H-5%/-95% mix gas, and ball milling conditions have been investigated on the sake of PDP(Plasma Display Panel) application. The characteristics such as particle morphology and photoluminescence of prepared phosphors were compared to those of commercial ZnSiO:Mn Phosphors. It was found that the Phosphor synthesized at 130 with 0.08 Mn concentration had a maximum brightness, This brightness was increased more 20% by reduction treatment under 100me/min flow rate of 5%H-95% mixed gas. The size of particles decreased under 3 after ball milling. Especially, higher luminescence was obtained in our ZnSiO:Mn phosphors than commercial ZnSiO:Mn phosphors, so that they are able to be applied for PDP.

HfN/SiNand NbN/SiN multilayer coatings were deposited onto a high speed tool steel substrate by reactive sputtering and their mechanical properties were evaluated in terms of the dependence of hardness and adhesion strength on the sputter deposition process parameters. The hardnesses of both HfN/SiNand NbN/SiN multiplayer coatings increase up to the flux ratio of 0.4 but nearly do not change after that as the /Ar flux ratio in nitride sputter deposition increases. The hardnesses of both multiplayer coatings nearly do not change with annealing at low temperatures but decrease owing to oxidation with annealing at a high temperature like 80 after depositing the layers by sputtering. Post-annealing at low temperatures increases the adhesion strength of the multilayers. but high temperature annealing is not desirable since it decreases the adhesion strength besides the hardness deterioration.