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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 1, Issue 2 - Apr 1991
Volume 1, Issue 1 - Feb 1991
Selecting the target year
Optical Characterizations of
Single Crystals Doped with
You-song Kim ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 1~4
The applicability of
as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting
; the Curie temperature of this material is too low to permit diffusion temperatures much above
without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in
. Crystals of
doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of
doped crystals were measured at
. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped
; that for Mg-doped
higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg :
; the composition of the undoped and Ti :
. Diffusion of Ti into both Mg-doped and Ti-doped
crystals was studied as a function of
ratio and temperature.
Crystal Growth, Electrical and Optical Properties of Cubic
) Single Crystals Doped With Rare Earth Metal Oxides(RE=Ce, Pr, Nd, Eu, Er)
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 5~16
It was grown Cubic $ZrO_2(10 mol% Y_2O_3)$ single crystals doped with 1 wt% rare earth metal oxides (RE=Ce, Pr, Nd, Eu, Er) by Skull method. It was investigated electrical properties on (111) plane of grown single crystals by Impedance Spectroscopy. It was potted relation between temperature and electrical conductivities and observed the transition at
It was obtained activation energy on the migration of oxygen vacancy between low temperature (before the transition) and high temperature (after the transition till
) and its difference can be seen the activation energy of the formation of oxygen vacancies by break up defect complexes. It was obtained the activation energy according as add yttria and rare earth metal oxides and discussed ionic conduction mechanism. Grown single crystals showed Ce: orange - red, Pr: golden - yellow, Nd: lilac, Eu: light pink, Er: pink due to dopant effect from the light absorption data in the visible range.
Growth of GaAs Crystal by an Improved VGF Apparatus
Chul-Won Han ; Kwang-Bo Shim ; Young-Ju Park ; Seung-Chul Park ; Suk-Ki Min ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 17~25
The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit
, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient (
) and slower rates of post - growth cooling (
). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.
( Single Crystals by EFG Method
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 26~38
The fundamental conditions for growing
(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti
growing conditions determined in this study were as follows:
pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was
Single Crystal Growth of
by the Traveling solvent Floating Zone(TSFZ) Method
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 39~50
Single crystals of yttrium iron garnet
have been grown by a modified floating zone crystal growth technique(Traveling Solvent Floating Zone, TSFZ method) using an infrared radiation convergence type heater. A series of evaluations for the resulting YIG single crystals were carried out. The grown crystals are 5~6mm in diameter and 15~35mm in length. The conditions of single crystal growth were as follows; growth rate 1mm/h, rotation rate 30rpm, gas flow rate 0.2 1/min., zone aspect ratio 1, convexity of interface 0.29, respectively.
A Theoretical Study of GaAs Nucleation in GaAs/Si Heteroepitaxy Structure
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 51~59
Early stage of GaAs nucleation on Si substrate was theoretically studied by computer simulation. Compared to the constant ledge interaction energy in conventional nucleation theory, functional behavior of ledge-ledge interaction resulted in small size clusters depending on the cluster size and shape. Among various kinds of clusters, the multilayer pyramidal shape GaAs cluster requires smallest excess free energy due to the formation of Ga(111) facet planes. There this result suggests that the defects involved in GaAs/Si are originated from the early stage nucleation.
The Synthesis of Fine ZnO powder by the wet Batch process.
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 59~70
ZnO fine powder was prepared by the batch precipitation process using
and hexamethylenetetramine solution as a mother solution. When the concentrations of
and 0.05mol/-, the particles of rod shape were obtained when the conentration of
, the particle of plate shape was obtained. When the hexamethylenetetramine as a precipitants was used, pH was raised slow during a few minute be-cause of slow hydrolysis rate of hexamethylenetetramine. For rapid raising of pH during initial reac-tion time,
OH was added as nucleant. When
OH as a nucleant was added, obtained particle was shape of granular and the mean particle size was
. After calcination at
during 1hour, all of remained organic phase was removed but the shape of particles was not changed. But pa-rticles were slightly shrunk in comparision with before calcined particles.
Hydrothermal Growth of
Single Crystals in HCI Solution
Pan-Chae Kim ; Shin-Ichi Hirano ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 60~65
The hydrothermal growth of
Single Crystals was carried out by the horizontal temperature gradient method. The most promising solvents for the crystal growth of
and HCl solutions. Single crystals have been hydothermally grown at temperatures over the range
in these solutions with seed crystals. The glowth rates in HCl solution were higher than that for comparable conditions in
solution. Morphologies of crystals grown at temperatures below
tended to be bounded by small major rhombohedral(10
1) faces. In the temperature range from 200 to
, the single crystals have morphologies bounded by prism (10
0), small major rhombohedral(10
1) and minor rhombohedral(01
1) faces at the early stage, and grew with well developed basal(0001) faces by increasing the growth temperature.
Formation Mechanism of the Micro Precipitates Causing Oxidation Induced Stacking Faults in the Czochralski Silicon Crystal.
Kim, Young-K. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 66~73
During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.
The Transient Simulation of Czochralski Single Crystal Growth Process Using New Solidification Model
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 74~81
The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.
Molecular Beam Epitaxial Growth of GaAs on Silicon Substrate
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 82~91
Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.
Reaction Kinetics in the Formation of Silica Fine Particles By the Hydrolysis of Ethyl Silicate
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 92~99
The reaction obtaining
fine particle from
consists of two steps, that is, hydrolysis and polycondensation. Polycondensation is the first order with respect to the concentration of
As the concentration of water, ammonia reaction temperature are increased, the reaction rate constant of polycondensation is increased.Silica particles formed are spherical and very uniformly dispersed. The diameters of them are be-tween 0.06 and
. As the initial concentration of
is decreased and the reaction temper-ature is increased, the diameters of silica particles are reduced. The rate of particles growth derived from time vs, conversion data, is represented as follows; d=a.ln(Xa)+b, where d is the diameter of silica and a, b are constant. The final diameter of silica approaches to the value of b.
The Effect of Freezing and Filter Cake Drying Process on the Preparation of Ba-Ferrite by Coprecipitation
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 100~106
Ba.Fe - hydroxide precipitates were obtained by the variation of pH levelsm, which process was based on the calculated solubility from the solubility product(Ksp). Single phase
was synthesized above
. The 98% of theoretical density was obtained in the specimens formed from the filter cake drying and the hand pressing at temperatures
for 2hrs, respectively. The feezing of colloidal coprecipitate suspension formed powders up to several tens of micron size, which led to reduce the filtration time and the consumption of distilled water.
Synthesis of Spherical Fine
Particles by the Spray Pyrolysis Method Using Ultrasonic Vibrator
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 107~116
Particles were synthesized from the
solution by the spray pyrolysis method using the ultrasonic vibrator as a mist generator. The obtained particles were characterized. The mechanisms of particle formation were discussed in comparison with those if other particles, such as
, ZnO ....., in the same spray pyrolysis process.
Technical Trend of Silicon Single Crystal Growth
Journal of the Korean Crystal Growth and Crystal Technology, volume 1, issue 1, 1991, Pages 117~126
Silicon single crystal is the most frequently used materials for the semiconductor device fabrication, The crystal growth techniques have been steadily improving for achieving a greater degree of crystal perfection and large ingot size. This report present the advantages, disadvantages and technical problems of the various crystal pulling technique briefly on the economic impact of productivity. Also, future directions of the pulling technique and process including the economical and quantitative aspects are deal with.