Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 10, Issue 6 - Dec 2000
Volume 10, Issue 5 - Oct 2000
Volume 10, Issue 4 - Aug 2000
Volume 10, Issue 3 - Jun 2000
Volume 10, Issue 2 - Apr 2000
Volume 10, Issue 1 - Feb 2000
Selecting the target year
Surface analysis of a-
: H deposited by RF plasma-enhanced CVD
Kim, Yong-Tak ; Yang, Woo-Seok ; Lee, Hyun ; Byungyou Hong ; Yoon, Dae-Ho ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 1~4
Thin films of hydrogenated amorphous silicon carbide compounds (
) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH
) and methane (
) as the gas precursors at 1 Torr and at a low substrate temperature (
). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of
films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).
Growth characteristics of single-crystalline 6H-SiC homoepitaxial layers grown by a thermal CVD
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 5~12
As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented (
tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature
and C/Si flow ratio 2.0 of
0.2 sccm &
Progress in Si crystal and wafer technologies
Tsuya, Hideki ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 13~16
Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.
Magnetic properties and the shapes of magnetic domain for
alloy films with the prior deposition of Ti layer
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 17~22
A quaternary alloy film of
was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.
Computer simulation of titania particle agglomeration
Kim, Jong-Cheol ; Auh, Keun-Ho ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 23~29
The agglomeration of titania particles with 30 nm in radii was simulated based on the colloidal stability. For surface potential increase from 4.5 to 16.8 mV the height of energy barrier increased. This tendency may explain the experimentally observed aggregation behavior where particles with smaller size and higher potential exhibited higher stability but form bigger and harder agglomerates with irregular shapes after drying.
A study on solidification of silicon by floating technique
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 30~35
A floating solidification technique is a process applied extensively to the production of glass plates. We used the technique for fabrication of Si plate. We used the proper liquid substrate material of 50 wt%
- 21 wt%
-29 wt% MnO, after studying ternary phase diagram of various oxides systems. The liquid substrate material has proper properties in the aspects of temperature, density and reactivity. But results showed some problems in fluidity and surface tension of the liquid substrate material.
A study on the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multialyers
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 36~41
We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got
ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of
by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.
Investigation into the variation on Si wafer by RTA annealing in
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 42~47
The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H
ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during
annealing process also has been observed.
Influence of mullite-seed on the mullite synthesis from various compositions
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 48~54
Influence of seed addition on the mullite synthesis was investigated from mixture powders of kaolin and aluminium trihydroxide which contain various
/SiO_2$ ratio (silica rich, stoichiometric, alumina rich). The flexural strength increases with the increase of the mullite-seed content in case of silica rich and stoichiometric mullite, but flexural strength decreases with the increase of the mullite-seed content in case of alumina rich mullite. Microstructural investigation revealed that aspect ratio of mullite grains increased with higher alumina content, along with lower sintered density. Mullite contents of specimens are increased with seed content regardless of
/SiO_2$ ratio of the mixture composition.
Improvement of the electrochemical properties of low temperature synthesized carbon for anode materials in lithium-ion batteries
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 55~61
The electrochemical properties of hard carbon anodes in lithium ion batteries were improved by carbon coating using polyvinyl chloride (PVC). The reduction in irreversible capacity occured and the reversible capacity increased. It is suggested that the PVC carbon coating modifies the surface of hard carbon and reduces the surface reaction with species from air. The degree of the graphitization of PVC carbon was controlled by an addition of Ni, and the effect of the amount of Ni addition on the electrochemical properties was discussed.
The study for fabrication and characteristic of Li
conduction glass system using conventional and microwave energies
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 66~72
The behavior of nucleation and crystallization in the
glass heat-treated at different condition under the conventional and microwave processing was studied by differential thermal analysis (DTA), X-ray diffractometry (XRD), optical microscopy (OM), and electrical conductivity measurement. Nucleation temperature and temperature of maximum nucleation rate in both conventionally and microwave heat-treated samples were 460~
, respectively. It was expected that the probability for bulk crystallization increased in microwave heat-treated sample, compared to conventionally heat-treated one. Degree of crystallization increased with increasing crystallization temperature in both conventionally and microwave heat-treated samples. However, pattern of crystallization growth under microwave processing appeared to be quite different from that under the conventional one due to its internal or volumetric heating. Electrical conductivity of conventionally and microwave heat-treated samples were 1.337~2.299, 0.281~~
Synthesis of zeolite A from serpentine
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 73~79
Highly porous amorphous silica obtained from a serpentine mineral by hydrochloric acid treatment was used to produce a zeolite A through the hydrothermal reaction under atmospheric pressure. An optimum synthesis condition of the zeolite A was achieved at
for two hours with a mole ratio of
1.5. Additionally, it was found that a hydroxysodalite zeolite was formed under the experimental conditions over the reaction temperature of
and the reaction time of 120 minutes even though the crystallization of zeolite proceeds rapidly as the reaction temperature and the alkalinity becomes higher.
Effects of ultrasonication intensity and shaking time on the rheological behavior of alumina slurries with maltodextrin
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 80~85
The rheology of alumina slurries with maltodextrin was studied with different processing routes using experimental design and statistical analysis. Different processing routes include maltodextrin addition, different ultrasonication intensity applied to the slurries before or after adding maltodextrin, and shaking time. Viscosities of the slurries showed shear thinning behavior and were correlated with the Ostwald-de-Weale model. The viscosities of alumina slurries decreased with the addition of maltodextrin and increased with ultrasonication intensity. There were little differences in the viscosities of the slurries depending on whether maltodextrin was added before or after ultrasonication.
Sintering characteristics of the mixed body of clay and flyash containing unburnt carbon
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 1, 2000, Pages 86~90
The mixed body of clay and flyash containing unburnt carbon was examined at various sintering conditions in order to recycle flyash as environment-affinitive construction materials. Experimental results can be summarized as follows : when large aggregate of 2.54 cm dia. was sintered at a heating rate of
/min, heterogeneous phase with bulgings, inner pores, and cracks were observed at the sintering temperature of
. Accordingly, heating patterns for the complete removal of the heterogeneous phase were proposed as countermeasures. The compressive strength of finally obtained aggregate was 670~870kg/
, which is over two and a half times stronger than the minimum requirement of 200kg/