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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 10, Issue 6 - Dec 2000
Volume 10, Issue 5 - Oct 2000
Volume 10, Issue 4 - Aug 2000
Volume 10, Issue 3 - Jun 2000
Volume 10, Issue 2 - Apr 2000
Volume 10, Issue 1 - Feb 2000
Selecting the target year
eutectic fibers by the micro-pulling down method and its mechanical properties
;Akira Yoshikawa;Stephen D. Durbin;;Tsuguo Fukuda;Yoshiharu Waku;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 5, 2000, Pages 345~349
eutectic fibers were grown by micro-pulling down technique and investigated their microstructure as a function of solidification rate.
eutectic fibers 0.2~2 mm in diameter and 500 mm in length have been grown with a pulling rate of 0.1~15 mm/min. The eutectic microstructures changed as a function of fulling rate from rod-shaped to cellular shape containing some thin lamellar pattern via uniform lamellar structure. Typical lamellar thickness decreased from about 380 nm to 110 nm as the pulling rate increased from 1 mm/min to 15 mm/min. The interlamellar spacing fitted with the inverse-square-root dependence on pulling rate according to
has the dimension in
and v is
/s. Hardness value reached 13.1 GPa at 15 mm/min of pulling rate and tensile strength 900 MPa at 10 mm/min were also increased as the interlamellar spacing decreased.
GaN epitaxial growths on chemically and mechanically polished sapphire wafers grown by Bridgeman method
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 5, 2000, Pages 350~355
The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.
Comparison of numerical simulation and experiment for the OiSF-Ring diameter in czochralski-grown silicon crystal
Oh, Hyun-Jung ; Wang, Jong-Hoe ; Yoo, Hak-Do ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 5, 2000, Pages 356~361
The radial position of OiSF-ring has been meaningful data in industry. Thus it's position was calculated by application of (V/G)/sub crit/ = 0.138 ㎟/minK and point defect dynamics for industrial scale grower with various pull rates. After the calculation, compared with experimental result. OiSF-ring diameters expected with calculation were good agreement with experimental results. In order to show validity of the predicted temperature distribution using STHAMAS which is one of the global simulator for Cz crystal growing, temperature was measured along the axis of crystal using thermocouples, and compared with the calculated temperature. We found the effective thermal conductivity K/sub m/ (r) which gives in accordance with the temperature distribution at the axis of crystal and crystal/melt interface shape between experimental and computational results. Therefore, effective thermal conductivity K/sub m/ (r) was applied instead of solving melt convection problem.
Effect of Ti substitution on electrochemical properties
synthesized by solid state reaction
;Marca M. Doeff;Abraham Anapolsky;Thomas J. Richardson;
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 5, 2000, Pages 362~366
cathode material has high reversibility during lithium insertion processes and is not easily damaged through over-charging or over-discharging.
is often present as an impurity phase, and reduce the electrochemical capacity of electrode because this phase is electrochemically inert. Adding of excess NaOH reduced the
to the content under undetectable by X-ray diffraction. Because the capacity can be increased in the cathode materials with larger unit cell, some of the manganese was replaced with titanium having larger ion size, and powders with the formula
(where y = 0.11, 0.22, 0.33, 0.44, and 0.55) was synthesized and characterized. A maximum reversible capacity of 150 mAh/g was obtained for
cells in electrochemical potential spectroscopy (ECPS) experiments. Cells with the titanium-doped manganese oxides exhibited a fade rate of 0.12 % or less per cycle.
The corrosion of the opaque zone induced under stress oscillation in PET film
Journal of the Korean Crystal Growth and Crystal Technology, volume 10, issue 5, 2000, Pages 367~372
The film-type specimen of poly ethylene terephthalate (PET) was stepwise elongated under tension with various speed range of about 0.5~500 mm/min, and then the necking behavior during its plastic deformation was observed. When elongated at the speed range of about 20~100 mm/min, stress oscillation was apparently occurred in the stress-strain curve. When elongated at the speed range of about 200~500 mm/min, stress oscillation was not did. The transparent/opaque zone and cross-section area in the specimen elongated at the speed of about 50 mm/min were examined using the optical microscopy and scanning electron microscopy. The corrosion characteristic of the specimen elongated at the speed of about 50 mm/min in 3.8 M NaOH alkali solution was examined using the optical microscopy.