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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 13, Issue 6 - Dec 2003
Volume 13, Issue 5 - Oct 2003
Volume 13, Issue 4 - Aug 2003
Volume 13, Issue 3 - Jun 2003
Volume 13, Issue 2 - Apr 2003
Volume 13, Issue 1 - Feb 2003
Selecting the target year
Effect of ethylenediamine tetra acetic acid additive on the nucleation kinetics and growth aspects of L-arginine phosphate single crystals
Kumar, R.Mohan ; Babu, D.Rajan ; Ravi, G. ; Jayavel, R. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 153~156
Pure and Ethylenediaminetetraacetic acid (EDTA) doped L-arginine phosphate (LAP) single crystals were grown from the aqueous solution by temperature lowering method. The effect of EDTA additive on the solubility and metastable zone width of LAP solution has been investigated. Addition of EDTA has enhanced the metastable zone width of LAP and hence bulk crystals could be grown. The growth rate along the  direction increases with EDTA additive. Powder X-ray diffraction and FTIR studies reveal the absence of EDTA in the lattice of LAP, This reveals that the addition of EDTA to LAP doesn't influence the crystallinity. However, the transmittance and NLO properties significantly increase with EDTA additive and hence bulk LAP crystals are useful for laser fusion experiments.
Growth of oriented
thin films on Si (100) substrates by the pulsed laser deposition method
Yokotani, Atsushi ; Ito, Tomomi ; Sato, Akiko ; Kurosawa, Kou ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 157~164
thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from
. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of
. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at
were much more than that in film at
. Adding the adequate amount of
gas in the growth chamber can compensate this lacking of F.
Properties of yttria-stabilized zirconia ceramics for optical ferrule
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 162~167
In order to evaluate the properties of the sintered zirconia for optical ferrule, specimens were prepared at 1350, 1400 and
using starting materials supplied by A, B and C providers. Crystallinity, microstructure and mechanical strength were tested as a function of sintering temperature. Crystallinity of the sintered specimens was determined by X-ray diffraction analysis. A field emission-scanning electron microscope was used for studying the microstructure after sintering. Bending strength and Vickers' hardness were also examined by universial tester and Vickers' hardness tester, respectively. The specimen B sintered at
was favorable because of its high tetragonality and good mechanical strength for practical usage.
Investigation of crystallinity and microstructure of
single crystal grown by floating zone method
Cho, N.T. ; Kwon, D.H. ; Shin, J.H. ; Ahn, C.I. ; Shim, K.B. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 168~171
single crystals have been grown by a floating zone technique and the optimal growth conditions were investigated. Their crystallinity and microstructure were characterized by the chemical etch pit patterns, their distribution and the compositional difference depending on the G value. In particular, the microstructural feature was interpreted in terms of compositional deviation along radial direction on (1010) growth plane.
Lattice strain effects on superconductivity in
single-crystalline films grown by IR-LPE technique
Tanaka, I. ; Islam, A.T.M.N. ; Wataudhi, S. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 172~175
We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown
(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g.,
etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.
Development of ultrafine grained silicon carbide by spark plasma sintering
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 176~181
Rapid densification of a SiC powder with additive 0.5 wt%
C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be
/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and
and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at
reached near-theoretical density. The XRD found that 3C-to-6H transformation at
. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2
and elongated grains of 0.5∼2
wide, length 3∼10
. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at
for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa
which might be due to the transgranular fracture mode.
Growth and characterization of 240kg multicrystalline silicon ingots grown by directional solidification
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 182~186
The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.
Convection in the growth of zinc telluride single crystal by physical vapor transport
Kim, Geug-Tae ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 187~198
Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.
Microstructural analysis of sintered brick made of recycled wastes
Journal of the Korean Crystal Growth and Crystal Technology, volume 13, issue 4, 2003, Pages 199~204
Microstructure and chemical analysis of sintered bricks containing recycled wastes were investigated by SEM and EDS. The recycled wastes for which substitute ceramic raw materials were EAF (electric arc furnace) dust, fly ash and stone ash. Yellowish and brownish regions on the surface and brownish and blackish regions in the inside of bricks were observed. Main component of yellowish region on the surface turned out to be Zn. No chemical difference between the black-core region and brownish matrix. Mullite crystallites of 1 fm size were distributed in the inside of bricks and enclosed by glass phases. It seems that alumine-silicate mixtures of kaolin and fly ash were transformed to mullite crystallites during the sintering. Relatively large pores ot several ten fm size were observed in the black-core region in the inside of bricks. The main components of the inside of brick were Al and Si. The minor components were C, Na, Mg, K, Ca, and Fe. Particularly, the precipitates of Fe-rich crystallites were observed in the amorphous matrix. These precipitates were formed due to the local reduction atmosphere in the inside of bricks. Zn-rich covers were found on the surface of bricks because Zn diffused from the inside of bricks to the surface under the reduction atmosphere.