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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 5, Issue 4 - Aug 1995
Volume 5, Issue 3 - Jun 1995
Volume 5, Issue 2 - Apr 1995
Volume 5, Issue 1 - Feb 1995
Selecting the target year
A study on the optical damage in
: Mg single crystals grown by CZ method
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 1~10
single crystals and
: Mg single crystals, having high resistance to optical damage, doped with MgO to the levels of 2.0, 5.0 and 7.0 mol% were grown successfully by CZ method and optical damage of each crystal was measured by compen. sation method. With doping level reaching about 5 mol%, there was an abrupt change in the features of optical absorption edge and
absorption band. From these data, we confirmed indirectly the threshold in MgO doping level. When the MgO doping amount reaches about 5 mol% in the melt,
occupies Nb site and becomes
, resulting in the sharp increase of optical damage resistance. The optical damage resistance of
: Mg was improved more than three times when MgO amount in the melt reaches 5 mol%.
tube shaped single crystal growth by the EFG method
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 11~18
tube shaped single crystals were grown by the EFG method. By using two different heating arrangement, tube shaped single crystals were grown. Comparing the grown tube shaped single crystals, tube crystal growth conditions were established.
Optical properties of potassium lithium niobate single crystal grown by TSSG method
Tsuguo Fukuda ; ; Makiko Hashimoto ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 19~24
Large size potassium lithium niobate (KLN) crystals with dimensions of
were grown by the top - seeded solution growth (TSSG) method. The extraordinary refractive index
at the second harmonic frequency for KLN crystal depends on the composition and decreases in this crystal due to the large Li content. KLN crystal was characterized by observation in UV - VIS spectrometry. It is transparent from the ultraviolet to infrared spectral regions that the transmission limit and cut- off wavelength are about 350 and 380 nm.
The structure and the surface composition of semiconductor CdZnTe films by EBE
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 25~36
We have investigated the structure and the conductivity of the
Te films evaporated on the glass substrates (Corning 7059) by Electron Beam Evaporator (EBE) in pressure of approximately
torr.The structure temperatures were held at both room temperature and
, and the samples have annealed for an hour at
The survace com-position of the as-prepared films were slightly different from those of CdZn Te source material.Cd losses on the CdZnTe surface was measured about 4% of atomic ratio at room temperature substrate, whereas Zn atomic ratio was nearly constant, relatively. The strure is observed to be polycrystalline whose phase is mainly cubic phase. Thermal expansion coefficient was
which was calculated from the variation of lattice parameter by X-ray powder pat-terns measured at
.Diffraction peaks were slightly increased by annealing for an hour at
, but they werey highly affected by substrate temperature during evaporation.
Solvents for liquid phase epitaxial growth of silicon thin film for photovoltaics based on calculation
;Martin A. Green;
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 37~43
The proper choice of the solvent is a prerequisite for solution growth of silicon. In the present work, the temperature to dissolve at least 1 atomic% silicon was calculated in various molten solvents.
A study on micropipes and the growth morphology in 6H- SiC bulk crystal
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 44~49
Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.
6H - SiC single crystal growth by sublimation process
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 50~59
Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was
at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000
. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic
Theory and practice of synthesized ZnO powders by ultrasonic spray pyrolysis method
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 60~66
Abstract The experimental results which is the aerosols behavior and distribution of atomized zinc nitrate (
) solution (0.5 M) by ultrasonic vibrator were in accord with the computer simulations. i.e., most aerosols passing through the reactor (hot zone) moved toward the center of reactor by thermophoresis as the axis of reactor increase. Also, the distribution of aerosols concentration was high at the center of reactor as the axis increase. Among the synthesized ZnO particles, shell-like aggregates of fracture type which could not see at the center of reactor were observed at near the wall of reactor, and the particle size (
) of near the wall was larger than that (
) of the center.
Thin film solar cells
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 67~77
Abstract The principal factor affecting the increased penetration of photovoltaics into the marketplace is cost. For traditional crystalline silicon modules, half of the cost is that of the silicon wafers. As a result much effort has centered on reducing this cost by the use of thin film technologies. Substantial technical progress has been made towards improving the efficiencies of polycrystalline thin film solar cells to reduce the production costs. Progress in semiconductor deposition techniques has also been rapid. The most mature of these are based on polycrystalline silicon (p - Si), amorphous silicon (a - Si), copper indium diselenide
(CIS), and cadmium telluride (CdTe). This paper explores the recent advances in the development of polycrystalline thin film solar cells.
The electrical and optical properties of semiconductor CdTe films
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 1, 1995, Pages 78~86
Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of
and slightly increased by annealing for an hour at
. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of
and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.