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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 5, Issue 4 - Aug 1995
Volume 5, Issue 3 - Jun 1995
Volume 5, Issue 2 - Apr 1995
Volume 5, Issue 1 - Feb 1995
Selecting the target year
Melt-solid interface and segregation in horizontal bridgman growth using 2 - and 3 - dimensional pseudo - steady - state model
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 306~317
Abstract Gallium arsenide crystal is usually grown from the melt by the horizontal Bridgman method. We constructed pseudo - steady - state model for crystal growth of GaAs which inclue melt, crystal and the free interface. Mathematical equations of the model were solved for flow, temperature, and concentration field in the melt and temperature field in the crystal. The location and shape of the interface were also solved simultaneously. In 2 - dimensional model, the shape of the interface is flat with adiabatic thermal boundary condition, but it becomes curved with completely conducting thermal boundary condition. In 3 - dimensional model, the interface is less curved than 2 - dimensional case and the flow intensity is similar to that of 2 - dimensional case. With the increase of flow intensity vertical segregation shows maximum value in both 2 - and 3 - D model. However, the maximum value occurs in lower flow intensity in 2 - D model because the interface is more curved for the same flow intensity.
A study on the optical properties of
single crystal grown by Floating zone method
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 318~331
The c - axis oriented single crystal of
: 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of
with those of the other optical materials, the nonlinear optical refractive index (
) was calcu l lated using the measured refractive index.
Critical factors in sol-gel transition of silicon metal alkoxide solutions
;;Hiromitsu Kozuka;Sumio Sakka;
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 332~342
The important factors of reaction conditions in sol-gel transition of silicon alkoxide solution have been reviewed and discussed on the basis of Raman study. Various factors such as type of catalyst, alkoxide, solvent, drying control chemical additive and water content affect the conversion mechanism in sol-gel process.
Texture in hot-pressed silicon carbide
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 343~350
A Abstract Systematic studies of the effects of crystalline forms of starting powders and p processing variables on the texture of hot - pressed silicon carbide are described. The results I indicate that hot - pressing of
- SiC can produce strong textures and composite type duplex microstructure due to the
phase transformation of SiC. The texture variations d during post - annealing have been observed. In the case of using a - SiC as starting pow¬d ders, the degree of preferred orientation by hot - pressing is relatively weak.
Surface analysis of reactively ion-etched aluminum films in
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 351~357
The surface layer of the aluminum film reactively ion etched in
plasma was ana alyzed by using XPS.
which is nonvolatile is formed at the aluminum surface. As the analyzed depth increases, the intensity of the
peak of Al - F bonds decreases while that of a aluminum metallic bond increases. The thickness of the
surface layer is 50~100
and the deep penetration of fluorine atoms is attributed to the mixing effect by the bombardment of incident particles. For the aluminum oxide film which is etched in
plasma under the same conditions, oxygen atoms are substituted by fluorine atoms to form
surface layer, which is m much thinner than that formed on aluminum surface.
Surface structure and critical load of thin metal films on SiC substrate
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 358~369
Surface structure and adhesion by the reaction between thin metal films and SiC were studied at temperatures between 550 and
for various times. The reaction with the formation of various silicides was initially observed above
for SiC/Co system and
for SiC/Ni system. The cobalt reacted with SiC and consumed completely at
for 0.5 h and the nickel at
for 2 h. The observed CoSi phase in SiC/Co and Ni
Si phase in SiC/Ni are thermodynamically stable in the reaction zone up to 125
respectively. Carbon was crystallized as graphite above
for SiC/Co reaction surface and
for SiC/Ni. The critical loads of the thin metal films on SiC substrate were qualitatively compared in terms of the scratch test method. At temperatures between 850 and
, relatively higher values of 20~33 N were observed for SiC/Ni couples.
Development of protection coating material on the surface of insulation tiles of space vehicle
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 370~377
The recombination of oxygen and nitrogen atoms on the surfaces of two coating m materials of the Space Shuttle Orbiter (SSO), a reaction cured glass (RCG) and a spinel (C742), was investigated. The recombination probability,
, i.e., the probability that atoms im p pinging on the surface will recombine, was measured in a diffusion reactor. Value of
for oxy g gen atom on C742 (
) was much higher than that on RCG (
) at the tempera t ture of SSO re-entry (ca. 1000K). The higher value of
on C742 indicates a higher number d density of active sites than RCG. It suggests the possibility of designing less active surfaces by i inducing the desorption at lower temperature.
Improved single crystal growth methods for oxide materials by MBE, LPE and
- PD techniques
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 378~385
The growth processes of improved methods for MBE, LPE and
- PD methods are discussed taking the oxide materials, especially those of Bi - Sr - Ca - Cu family
family as examples. It is suggested that the crystal growth far from equilibr iu m including composition homogeneity has been achieved to satisfy in understanding and controlling the atomic interfaces.
FGM by SHS process
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 386~393
A Abstract Producing process of FGM by SHS process has been investigated and
/Cu based FGM was fabricated by the process. When raw material powders were stacked on, Cu substrate, composition profile can be graded. This stacked body was compressed and vacuums sealed into the capsule for the synthesis. This sample was ignited and compressed under high h hydro - pressure. By the observation of the crystal phases and microstructures of produced
/Cu FGM samples, the compositional gradient was able to be identified.
The relation of dielectric properties and structure change with temperature for
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 394~399
Dielectric properties and crystal structure changes with temperature were observed on
which had a superstructure due to oxygen octahedron tilting. Dielectric loss peak observed at 380 K was found to have a relation with a primitive cell change from tetragonal to cubic, however, in this case, dielectric constant variation was not observed. Therefore it was found that the dielectric loss was more senstive than the dielectric constant for detecting the structure change. After the structure change of primitive cell from tetragonal to cubic, X-ray diffraction peaks of superstructure, which completely disappear above 500 K, were still observed. And no dielectric property variations were found with the disappearence of superstucture.
Buried contact solar cell
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 400~407
A Abstract Buried contact solar cell is a very high efficiency silicon solar cell having over 19 % conversion effciency. In this paper, we investigated the process and characteristic of buried c contact solar cell. Manufacturing pro않sses of buried contact solar cell consist of three high temperature processes, one high vacuum deposition process, one laser application process and other wet chemical processes.
Effect of mechanical backside damage upon minority carrier recombination lifetime measurement by laser/microwave photoconductance technique
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 408~413
We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.
The treatment of coal fly ash for the recycling as ceramic raw materials : I. The effect of calcination and elutriation
Journal of the Korean Crystal Growth and Crystal Technology, volume 5, issue 4, 1995, Pages 414~422
Coal fly ash was calcined and elutriated for recycling as ceramic raw materials. C Crystal phases, morphologies, chemical components, particle size distributions and Ig. loss of as-received, calcined and elutriated coal fly ash were investigated to study the effects of the calci nation and elutriation on the coal fly ash classification. The experimental equations, which were used in elutriation of clay, were examined in order to find out which equation is appropriated for coal fly ash classification. It turned out that Rittinger's equation is relatively well matched for the fly ash. Having nothing to do with the treatment conditions, the crystal phases of coal f fly ash were mullite, quartz. Calcite peak was detected in as - received and elutriated coal fly a ash; however, it disappeared in calcined coal fly ash. As - received coal fly ash consists of various type of particles such as a cenosphere, coke type, silicate type, whisker type and aggregat e ed type. In case of calcined coal fly ash, coke type particles were eliminated and agglomerated type particles were relatively increased. Most of the particles that were relatively spherical cenosphere in the 4th step of elutriator. Particle size distribution was narrowed by calcination a and elutriation. Especially, in elutriation, particle size distribution was very narrow.