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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 6, Issue 4 - Nov 1996
Volume 6, Issue 3 - Aug 1996
Volume 6, Issue 2 - May 1996
Volume 6, Issue 1 - Mar 1996
Selecting the target year
A numerical study on the effects of the asymmetric cusp magnetic field in 8 inch silicon single crystal growth by Czochralski method
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 1~10
A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number
model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.
Characterization of the grown - in defects in the large diameter silicon crystal grown by Czochralski method
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 11~18
Grown-in defects like OISF and FPD in the large diameter(> 8 inch)of silicon crystal are characterized. It was revealed that the presence of the ring-patterned OISF would deterorate the minority life time of the silicon crystal. Through the cooling experiment from the
, the nucleation of the OISF was confirmed to follow the homogeneous nucleation and growth process. In addition to OISF nucleus, crystal originated particle, which was known to be closely related with FPD (Flow Pattern Defects), was found to depend on the pulling rate of the crystal. Combination of the lower rate of the pulling and the faster cooling near the
is proposed to be effective method in reducing the generation of these grown-in defects.
Finite element analysis of transient growth of GaAs by horizontal Bridgman method
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 19~31
To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.
single crystal growth and electrical characteristics
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 32~43
single crystal was grown by modified veritical bridgman method. The
single crystal was evaluated to be tetragonal by the powder method. The
single crystal was confirmed to be grown with its c axis along the lengthe of the boule by the Laue reflection method. Hall effect of
single crystal was estimated by van der pauw method from 293 K to 30 K. Hall data of the sample perpendicular to c axis was
and the sample parallel to c axis was
for room temperature. The value of Hall coefficient on sample perpendicular or parallel to c axis were positive. There
single crystal was p-type semiconductor.
Single crystal growth of synthetic emerald by flux method of Vandadium - Molybdenum - Lithium oxide system
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 44~55
) single crystals were grown by flux method of
system. The composition of starting materials were 1, 3, 5 mole ratio of
, 20 - 15% of emerald content to flux composition and 1% of
colordopant to emerald composition. After mixing those were melted at
in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of
, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at
, in 3 mole ratio of
flux. Emerald single crystal growing effect and
ion of substitutional solid solution effect for
ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.
Growth and characterization of ZnSe/GaAs(100) by hot-wall technique
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 56~61
A hot wall epitaxy (HWE) apparatus with double source tubes was manufactured. This apparatus can be used to grow two kinds of epilayers at the same time or to grow heterostructures and multilayers. Undoped ZnSe single crystal films were grown on GaAs(100) substrates byusing this apparatus. SEM, XRD and PL analyses indicated that epilayers had good crystalline and optical quality. The epilayers grown at the source temperature 660 .deg. C and the substrates temperature
toor were mirror like and good quality. PL measurements show that the crystalline qualityis comparable with that of the ZnSe/GaAs epilayer grown by molecular beam epitaxy.
Interface formation and thermodynamics between SiC and thin metal films
Chang-Sung Lim ; Kwang-Bo Shim ; Dong-Woo Shin ; Keun-Ho Auh ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 62~72
The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and
for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/
/SiC reaction at 1050 and
for 2 h, while
at 950 and 105
for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above
for SiC/Co reaction zone and
for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.
Flexure and tension tests of newly developed ceramic woven fabric/ceramic matrix composites
Dong-Woo Shin ; Jin-Sung Lee ; Chang-Sung Lim ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 73~87
The mechanical properties of 2D ceramic composites fabricated bythe newly developed powder infiltration and subsequent multiple impregnation process were characterised by both 3-point flexure and tensile tests. These tests were performed with strain gauge and acoustic emission instrument. The woven fabric composites used for the test have the basic combinations of
and SiC fabric (Tyranno)/SiC. Uniaxially aligned SiC fibre(Textron SCS-6)/SiC composites were also tested for comparison, The ultimate flexural strength and first-matrix cracking stress of SiC fabric/SiC composite with 73% of theoretical density were about 300 MPa and 77 MPa respectively. However, the ultimate tensile strengths of composite were generally one third of flexural strengths, and first-matrix cracking stress in a tension test was also much lower than the value obtained from flexure test. The lower mechanical properties measured by tension test were analysed quantitatively bythe differences in stressed volume using Weibull statistics. This showed that the ultimate strength and the firs-tmatrix cracking stress of woven laminate composites were mainly determined bythe gauge length of fibres and the stressed volume of matrix respectively. Incorporation of SiC whiskers into the matrix increased first-matrix cracking stress by increasing the matrix failure strain of composites.
Electroless plating of buried contact solar cell
Dong Seop Kim ; Eun Chel Cho ; Soo Hong Lee ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 88~97
The metallization is the key to determining cell costs, cell performance, and system reliability. Screen printing technology suffers from several limitations affecting mainly the front grid. The buried contact solar cell (BCSC) was specifically desinged to be compatible with low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating technique, we performed this metallization inexpensively and reliably. This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surfaces. Commercially available Ni, Cu and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metallization has resulted in an cell efficiency of 18.8%. The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 37.1 mA/
, and fill factor of 77.8 %. The efficiency of over 18 % was achieved in the above 90% of the batch.
Antireflection coatings for solar cells
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 98~106
Antireflection (AR) coating has proven effective in providing substantial increase in solar cell efficiency. In this paper, we review the principles of antireflection coating, describe materials and methods of deposition used to provide antireflection coatings on solar cells.
Review on the papers presented in the JKACG (1991-1995) : (I) On the bulk crystal growth
Journal of the Korean Crystal Growth and Crystal Technology, volume 6, issue 1, 1996, Pages 107~120
The research activities on the bulk crystal growth presented in the journal of the Korean Association of Crystal Growth from 1991 to 1995 have been reviewed.