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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 7, Issue 4 - Nov 1997
Volume 7, Issue 3 - Aug 1997
Volume 7, Issue 2 - May 1997
Volume 7, Issue 1 - Feb 1997
Selecting the target year
Growth and characterization of a Bi-Sr-Ca-Cu-O phase by crystal pulling method
D. H. Yoon ; N. Sato ; N. Yoshimoto ; M. Yoshizawa ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 1~5
(BSCCO) phase is well known to be a superconductor having a strong anisotropic behavior. It can be seen that it is difficult to control the growth direction. In this study, we try to grow a Bi-Sr-Ca-Cu-O phase crystal by the crystal pulling method with a seed crystal and crucibel rotation. Relatively large crystals of the order of
dimensions can be obtained. We also discuss the possible crystallization field of the
-(Sr, Ca)O-CuO ternary phase diagram, and present some results of the characterization and magnetic measurements on the grown crystal.
Preparation and characterization of nearly stoichiometric
crystals by VTE method
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 6~17
Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varing between 48.6 ~ 58.0 mol %
. A vapor transport equilibration technique has been used to improve the homogeneity and adjust the [Li]/[Nb] ratio in small
single crystals grown by the Czochralski method. When equilibrated with a Li-rich powder (65 mol%
), containing a mixture of
, crystals of nearly stoichiometric composition can be obtained. This was established by studying the composition dependence of the following properties; lineshape, intensity and linewidth for the electron paramagnetic resonance (EPR) of
energy of the fundamental absorption edge and
seed on microstructure and fracture toughness of pressureless-sintered
Young-Wook Kim ; Won-Joong Kim ; Kyeong-Sik Cho ; Heon -Jin Choi ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 18~26
powder with or without the addition of 1 wt% of
particles (seeds) was pressureless-sintered at
for 0.5, 2 and 4 h using
(yttrium aluminum garnet, YAG) as a sintering aid. The introduction of
accelerated :he grain growth of elongated large grains during sintering, resulting in the coarser microstructure. The fracture toughnesses of materials with
-SiC seeds and without
seeds sintered for 4 h were 7.5 and 6.1
, respectively. Higher fracture toughness of the material with seeds was due to the enhanced bridging by elongated grains, resulting from coarser microstructure.
Silicon melt motion in a Czochralski crystal puller
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 27~40
The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.
Effects of natural convection on the melt/solid interface shape in the HEM process
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 41~46
The change of flow field and the effects of convective heat transfer on the shape and location of melt/crystal interface has been studied during the crystal growth by the heat exchanger method. Although the thermal structure is stable in the crucible, the flow due to the natural convection driven by radial temperature gradient is significant, because the thermal stability is broken by the hemispherical melt/crystal interface shape. The maximum interface deflection with convection is smaller than without and the convective heat transfer should be considered to simulate the heat transfer process of heat exchanger method rigorously.
Preparation of corundum
by hydrothermal growing process: II. A study on the effects of a mineralizer and substances on preparation of corundum
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 47~58
In this study single crystalline corundum (
) powders were prepared from gibbsite using hydrothermal growing processes. Addition of a mineralizer and the characteristics of solid substances were investigated to find their effects on the size distribution and crystalllnity of products. Experimental results showed that as the concentration of potassium hydroxide (KOH), a mineralizer, the particle size of corundum powders became larger at lower reaction temperatures. However, the size of corundum powders became smaller as the concentration of gibbsite increased in the feedstock. The hydrothermal synthetic conditions are also strongly dependent on the properties of hydrothermal solutions. Corundum powders which have the weight mean particle size of 1~10
with shapes of hexagonal were prepared in this experiment.
Epitaxial growth and microstructural characterization of
films on (100)Si substrate
Lee, Young-Ki ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 59~69
The growth and microstructural characterization of epitaxial yttrium silicide (
) on the (100)Si substrate are investigated. The
film grow epitaxilly through the solid phase reaction during vacuum annealing above
. The epitaxial relationships between the hexagonal
film and the (100)Si substrate are 
//Si and 
//Si in the (1100)
//(100)Si plane relation. The YSi
film consists of the two types of domains which have two different azimuthal orientations making an angle of
to each other. The two types of domains in the
film are equivalent in volume fraction and crystalline quality, which has been proved from the equivalent integrated intensities of (2201) asymmetric reflection of X-ray diffraction. The formation of a double -domain structure is discussed on the basis of geometrical matching at interface between the (1100)
film and the (100)Si substrate, and growth model is proposed.
Growth and electro-optical characteristics of CdSe/GaAs epilayers prepared by electron beam epitaxy
D. I. Yang ; Y. J. Shin ; C. H. Lee ; Y. D. Choi ; P. R. Yu ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 70~75
An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is
, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about
at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.
Growth and defects of ZnSe crystal
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 76~80
ZnSe single crystals were grown by seeded chemical vapor transport in
atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.
1-Dimensional efficiency modeling of rear floationg junction solar cell
A. U. Ebong ; Kim, D. S. ; Lee, S. H. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 81~92
Rear floating junction cell (RFJC), using the buried contact technology, is capable of eliminating the efficiency limitations on the single sided cells by providing betterear surface passivation. The implementation of this structure, is simpler and lower in cost and therefore viable for commercial production. However, the contributions, due to damages in the two sets of grooves, to the total dark saturation current density has limited the achievable efficiency of the RFJC to only 21.5 %. This Paper reports on the efficiency estimates of RFJC using PC-1D.
Recent trends in photovoltaic industries
;;;;;A. U. Ebong;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 93~107
A solar cell is a device which converts solar energy into electricity without any polluting by-product. Solar cells are useful when they are connected together to form modules. Total production of PV modules worldwide jumped 20 % in 1995 to reach a new record 84.8 MW. In this paper, the recent market trends in photovoltaic industries, principles and characteristics of solar cells and photovoltaic systems are reviewed.
Prediction of transition in Czochralski process
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 108~116
A laboratory experiment was made of critical transition flow modes in Czocllralski convection. Numerical computation was also made to delineate the dynamic transition. The period of temperature oscillation (
) and the interval of temperature oscillation (
) were scrutinized to capture the critical transition regime. The mixed convection parameter was varied in the range of
. The data from calculation were in good agreement with ones from experiment. The influence of the Prandtl number on the transition was examined for Pr ＝ 910, 4445 and 8889. To understand the transition mechanism, the detailed temperature oscillation modes, the isolines of meridional temperature and the axial velocity profiles were investigated.
The orientations of ferroelastic domain in single Crystal,
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 117~125
crystals were grown by the Czochralski method and Bridgman method. From XRD, DTA and the dielectric measurements, we investigated the structure and confirmed the phase transition temperatures of it. Using the polarizing microscope, we observed the ferroelastic domains and the temperature dependence of the domains. For the orientation states, we obtained the consistent result with the theoretical investigation by the crystallographical consideration. For Aizu species m3mF2/m(p) 12 orientation states are represented crystallographically.
The fabrication of 6H- SiC UV photodiode and the analysis of the photoresponse
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 126~136
6H-SiC UV photodiodes with
/n/n mesa structure were fabricated. The photocurrents of the photodiodes were measured in the wavelength range of 200~600 nm. The photocurrents were sensitive to ultraviolet radiation of 200~500 nm, and come to the maximum value at 260 nm. The quantum efficiency was calculated by using the diffusion model of minority carriers, and compared with the distribution of the photocurrent measured as a function of wavelength each other. The photocurrents of the 6H-SiC photodiode were explained by the diffusion model of the minority carriers which contained the optical absorption of the depletion region as well as the other layers.
The structure of intercalation compound between a layered double hydroxide and an ethyl orange
Jung, Woo-Chan ; Huh, Young-Duk ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 137~142
We synthesized the intercalation compound between a layered double hydroxide and an ethyl orange. The orientation of the intercalated ethyl orange into the layered double hydroxide was investigated. The molecular plane of the ethyl orange and its N＝N axis lie nearly perpendicular to the hydroxide layers with an antiparallel pattern.
Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique
Yoon, Jin-Young ; Choi, Duck-Kyun ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 143~150
The electrical properties of polysilicon thin films implanted with
as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were
(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.
Purification of pivalic acid : its evaluation as a temperature standard reference material
M. Karthikeyan ; M. B. Koss ; M. E. Glicksman ; Kee-Kahb Koo ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 151~162
The suitability of pivalic acid was confirmed as a secondary temperature standard material. Triple-point cells of pivalic acid were obtained by using combined process of vacuum distillation with zone refining. A detailed description of the purification process was given. The melting curves were used as criteria for determination of purities of pivalic acid. Triple points of these cells with purity of 99.9997% were measured to be
by using the melting plateau curves. Thus the triple point cells of pivalic acid appear to be able to use for the calibration of thermistor thermometers with moderate precision.
Sintering process of barium titanate prepared by homogeneous precipitation method
Seung-won Kim ; Moon-hee Lee ; Chul Lee ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 163~166
Synthesis and characterization of the ultrafine
powder by glycothermal
Bae, Dong-Sik ; Han, Kyong-Sop ; Cho, Seung-Beom ; Choi, Sang-Hael ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 167~173
powder was prepared under glycothermal conditions by precipitation from metal nitrates with aqueous potassium hydroxide. The fine powder was obtained at temperatures as low as 225 to
. The microstructure and phase of the
powder were studied by SEM and XRD. The properties of the powder were studied as a function of various parameters (reaction temperature, reaction time, solid loading, etc). The average particle size of the
increased with increasing reaction temperature. After glycothermal treatment at
for 8 h, the average particle diameter of the
was about 50 nm.
Activation and n-butane adsorption characteristics of palm char
Journal of the Korean Crystal Growth and Crystal Technology, volume 7, issue 1, 1997, Pages 174~184
Activated carbons were prepared from palm chars by steam activation. The effect of the activation temperature and time, steam concentration and flux on the n -butane adsorption properties were investigated on the basis of surface area, pore analysis and n-butane adsorption. The amount of n -butane adsorption increased with steam concentration and steam flux at higher activation temperature to the
, however this tendancy on the activated carbons were not observed at the temperature above
, It was shown that surface area was 978
/g, average pore size was 9.3
and n-butane adsorption was 5.9 g /100ml in the activated carbons, prepared at
, 185 minutes.