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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Crystal Growth and Crystal Technology
Journal Basic Information
Journal DOI :
The Korea Association of Crystal Growth
Editor in Chief :
Volume & Issues
Volume 9, Issue 6 - Dec 1999
Volume 9, Issue 5 - Oct 1999
Volume 9, Issue 4 - Aug 1999
Volume 9, Issue 3 - Jun 1999
Volume 9, Issue 2 - Apr 1999
Volume 9, Issue 1 - Feb 1999
Selecting the target year
Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method
Kawase, Tomohiro ; Tatsumi, Masami ; Fujita, Keiichiro ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 535~541
Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.
Characterization and crystal growth of InP by VGF method using quartz ampoule
Park, E.S. ; C.H. Jung ; J.J. Myung ; J.Y. Hong ; Kim, M.K. ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 542~546
InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of
Torr and sealed up. Indium metal was melted at
and InP composition was formed by diffusion of phosphorous sublimated at
into Indium melt. By cooling the InP composition melt (
/hr of cooling rate) in range of
, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of
/hr, growth direction of ingot was  and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were
/ Wcm in the range of 150K~300K, respectively.
single crystals by the floating zone method
Won Ki Yoon ; Jong Cheol Kim ; Keun Ho Auh ;
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 547~552
single crystal was successfully grown by Floating Zone (FZ) method and characterized. The growth rate was 1.5 mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. The grown crystal was 12 mm in length and 6 mm in diameter. The grown crystal was dark orange color and it was grown along  direction. The composition of grown crystal and the structure were analyzed using XRD and WDS. The electrical properties of grown crystal at various frequencies and temperatures were discussed.
Optical properties of the
N/GaN thin film
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 553~557
In order to investigate the optical properties of the
thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the
N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the
N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.
Step growth and defects formation on growth interface for SiC sublimation growth.
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 558~562
For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.
Numerical simulation for ultrafine SiC powder synthesis using the vapor phase reaction
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 563~569
The numerical simulation method was utilized to investigate the optimal condition for synthesizing ultrafine SiC powders by using
gaseous mixtures in the horizontal reactor. As a result of the theoretical analysis, the conversion percentage of TMS source was increased with increasing reaction temperature, however, which was decreased with increasing H
flow rate. Though the SiC particles concentration synthesized was decreased with increasing the reaction temperature due to the higher collision rate in the gas phase, they were increased with increasing the H
flow rate and TMS concentration. The SiC particle size showed a tendency to become larger as the reaction temperature and the initial TMS concentration were increased and smaller as the H
flow rate was increased. The variation of experimental particle size with the reaction temperature, H
flow rate and TMS concentration was agreed with the theoretical results.
Chemical solution derived hydroxyapatite films on Si substrates
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 570~573
Hydroxyapatite films were prepared on Si(100) substrates by using a sol-gel method with calcium nitrate and phosphoric acid as starting materials. Precursor sols were spin-coated onto the substrates and prefired at
for 10 min in air. Formation of the hydroxypatite structure was confirmed in the sample annealed at
by the X-ray diffraction
scans and a tricalcium phosphate phase was observed in the samples annealed at both temperature regions of
. From the results of Fourier transform infrared spectroscopy, the change of a carbon content and improvement of crystallinity have been discussed as a function of increase of annealing temperature.
Crystal growth of GaN semiconductor films by counter-flow metal-organic chemical vapor deposition
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 574~579
A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of
was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of
/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of
Thermal behavior of the layered structure of decanesulfonate intercalated into the hydrated nickel compound
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 580~584
The synthesis and characterization of intercalated compound of decansulfonate into hydrated nickel is presented. The compound shows a layered structure as determined by high temperature powder X-ray diffraction (HTXRD). The layer distance of the product is increased from 24.7
by increasing the temperature which is in turn accomplished by changing the structure of the intercalated nickel compound. From the X-ray diffraction data and the decanesulfonate size, the orientation of the decanesulfonate onto the nickel layer is determined. The molecular axis of the decanesulfonate with bilayer structure is tilted to the perpendicular of the nickel layer.
The influence of temperature gradient and rotation rate on Bi4Ge3O12 crystal growth by czochralski method
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 585~589
In order to grow
crystals by the Czochralski method equipped with the auto-diameter control system, we used the resistance heater of our own design. We measure the temperature gradients under-arious thermal configurations. The relation between the critical rotation rate corresponding to the flat interface and the temperature gadient was investigated, and the importance of the axial temperature gradient was pointed out. The results from this work were compared with those obtained by other authors when RF heating was used. The optimal conditions for the crystal growth were determined as follows; under
atmosphere with the pulling rate fixed at 2 mm/hr, rotation rate changed from 30 to 23 rpm as the crystal growth proceeded, radial and axial temperature gradients were 50 and
/cm near melts respectively, and the composition was chemically stoichiometric.
The effect of polyethypeneglycol on the electrocrystallization of Zn electrodeposition
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 590~596
The effects of additives on the Zn electrodeposition in chloride-based electrolyte were investigated using circulation cell with three electrodes system. The cathodic polarization increased with the addition of polyethylenglycol (hereafter PEG) in electrolyte. This was attributed to the adsorption of the additives on the electrode and the inhibition of migration of metal ion. The PEG, however, did not have any noticeable effect on the properties of plating solutions at the concentration used. The effect of PEG on the electrocrystallization was related to its molecular weight. With the increase of molecular weight, the cathodic polarization increased, while the surface roughness was improved with the decrease of brightness. Especially, the PEG mixed with different molecular weights was the most effective. The orientation and the type of the deposited grains were changed and refined by PEG, which resulted in the modification of deposited surface roughness and brightness.
The study of the fabrication and physical properties of porous silicon multilayers
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 597~600
By periodically varying the current density and etching time during anodic oxidation of crustalline silicon wafers in 15% HF-ethanol solution, we obtained porous silicon multilayers which have periodically varying refractive index. We fabricated the porous silicon microcavity (PSM) which consist of porous silicon multilayers (I), active layer of porous silicon, and porous silicon multilayers (II) and investigated its physical properties. The AFM (Atomic Force Microscope) measurement from the cross section of multilayers (I and II) shows uniformity of high refractive index and low index layers as well as the active layer. We observed the characteristics of Bragg reflector when the thickness of layers was 1/4 and the thickness of active layer was twice of the effective wavelength, which can be used as a filter for specific wavelength. We found the emission characteristic from the PSM, which FWHM (full width half maximum) was considerably decreased and emission intensity was increased.
Preparation and cation mixing phenomena of LiCo
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 601~605
solid solutions were fabricated by the solid state reaction process. The structural cation mixing phenomena were investigated using XRD, SEM, particle size analysis and
Li NMR,The synthesized LiCoO
microcrystallines showed the hexagonal layered structures. Mean particle sizes were increased with the increase of the amount of nickel in the solid solutions. The cation mixing effects were increased as increasing the fraction of nickel(x), x = 0.3, 0.5, 0.7. the peak frequency of
Li NMR was shifted to the higher frequency and the line width increased as increasing the amount of nickel in the solid solutions.
Low dielectric mullite/glass composite
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 606~611
Low dielectric Mullite/Glass composites for substrates were fabricated by mullite by synthesized from kaolin and alumina, and borosilicate glass. By the liquid-sintering, the composites were densified at low sintering temperature in air, allowing confiring with Cu, Ag, Au and Ag-Pd. Crystallization of the borosilicate glass was not occurred. The mullite/50 wt% glass composites fired between 950 and
showed good properties for high-performed substrate, such as low dielectric constant (5.2~5.4, at 1MHz), low coefficient of thermal expansion (5.3~
), and bending strength of 130 MPa.
The measurements of thermophysical properties of ceramics by single rectangular pulse heating method in transient heat source
Journal of the Korean Crystal Growth and Crystal Technology, volume 9, issue 6, 1999, Pages 612~620
Thermophysical properties of the high-dielectric ceramics were measured by a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature ranging from room temperature to 1300 K.