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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal DOI :
Electronics and Telecommunications Research Institute
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Volume & Issues
Volume 20, Issue 4 - Dec 1998
Volume 20, Issue 3 - Sep 1998
Volume 20, Issue 2 - Jun 1998
Volume 20, Issue 1 - Mar 1998
Selecting the target year
The Evolution of Korean Information Infrastructure and Its Future Direction: A System Dynamics Model
Hyun, Tchang-Hee ; Kim, Dong-Hwan ;
ETRI Journal, volume 20, issue 1, 1998, Pages 1~1
The recent technological and industrial revolution dictates a new approach in constructing Korean Information Infrastructure. Lacking past data on the newly emerging markets, econometrics methodologies cannot accurately forecast future path of advanced networks, let alone dynamic impacts of public policies. In this paper, we have built a system dynamics model of the Korean Information Infrastructure and simulated diverse policy measures including market integration and government initiative in investment for experimenting their effectiveness. The most counterintuitive result of our research is that the market integration policy will facilitate CATV networks at an early stage until the year 2010, but will result in a diminished market size in the long run. With the system dynamics approach, we can enhance our understanding of the complex policy systems and get valuable insights through learning by modeling and simulation.
Performance Evaluation of Access Channel Slot Acquisition in Cellular DS/CDMA Reverse Link
Kang, Bub-Joo ; Han, Young-Nam ;
ETRI Journal, volume 20, issue 1, 1998, Pages 16~16
In this paper, we consider the acquisition performance of an IS-95 reverse link access channel slot as a function of system design parameters such as postdetection integration length and the number of access channel message block repetitons. The uncertainty region of the reverse link spreading codes compared to that of forward link is very small, since the uncertainty region of the reverse link is determined by a cell radius. Thus, the parallel acquisiton technique in the reverse link is more efficient than a serial acquisition technique in terms of implementation and of acquisition time. The parallel acquisition is achieved by a bank of N parallel I/Q noncoherent correlator are analyzed for band-limited noise and the Rayleigh fast fading channel. The detection probability is derived for multiple correct code-phase offsets and multipath fading. The probability of no message error is derived when rake combining, access channel message block combining, and Viterbi decoding are applied. Numerical results provide the acquisition performance for system design parameters such as postdetection integration length and number of access channel message block repetitions in case of a random access on a mobile station.
Design and Control of Gain-Flattened Erbium-Doped Fiber Amplifier for WDM Applications
Kim, Hyang-Kyun ; Park, Seo-Yeon ; Lee, Dong-Ho ; Park, Chang-Soo ;
ETRI Journal, volume 20, issue 1, 1998, Pages 28~28
A simple experimental method to design gain-flattened erbium-doped fiber amplifier is proposed and demonstrated based on the two linear relations between the output power and the pump power, and between the gain and the length of the eribium-doped fiber at the gain flattened state. The spectral gain variation of the eribium-doped fiber amplifiber constructed by this method was less than 0.4 dB over 12 nm (1,545~1,557nm) wavelength region. The gain flatness is also controlled within 0.4 dB over the input power range of -30~-15dBm/ch through the feedback control utilizing the amplified spontaneous emission power in the 1,530 nm region.
Integration of 5-V CMOS and High-Voltage Devices for Display Driver Applications
Kim, Jung-Dae ; Park, Mun-Yang ; Kang, Jin-Yeong ; Lee, Sang-Yong ; Koo, Jin-Gun ; Nam, Kee-Soo ;
ETRI Journal, volume 20, issue 1, 1998, Pages 37~37
Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage
analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of
and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in
at a gate voltage of 5V.
Scattering from a Periodic Array of Duble-Dipole Elements over a Grounded Dielectric Slab
Ko, Jin-Whan ;
ETRI Journal, volume 20, issue 1, 1998, Pages 46~46
An analysis method of electromagnetic scattering from periodic patch array of double-dipole elements on a grounded dielectric substrate in case of oblique incident and arbitrary polarization is considered. The basis functions are chosen to be entire consinusoidal functions are chosen to be entire consinusoidal functions covering the rectangular shaped domain in which the original dipoles are inscribed, unlike the conventional method in which basis functions are defined only for the conducting element region. To confirm the validity of the proposed analysis method, we calculate the normalized scattered power for two propagating modes and compare the results with those obtained by the previous numerical method for the double dipole elements of rectangular type and parallelogram type which have the property of frequency scanned reflection and polarizer. Good correspondence has been observed between them. Some numerical results such as variation of power and axial ratio of first-order diffracted wave by a periodic array of double-dipole elements are compared with previous results.
The Sources and Directions of Technological Capability Accumulation in Korean Semiconductor industry
Rim, Myung-Hwan ; Choung, Jae-Yong ; Hwang, Hye-Ran ;
ETRI Journal, volume 20, issue 1, 1998, Pages 55~55
In this paper we analyze the technological accumulation processes in the Korean semiconductor industry from the institutional approach. Institutional approach, which is closely connected with Neo-Schumpeterian tradition, has emerged as an alternative theoretical framework to neoclassical approach to understand the process of producing technological knowledge. Traditional wisdom of neoclassical approach revealed the limitation to explain the complex nature of knowledge creation and diffusion. US patent data are analyzed in terms of the increasing trend of numbers and its content to measure the rate and direction of technological capability accumulation. This analysis shows that semiconductor technologies are one of the fastest growing fields among Korean technological activities. Moreover, the analysis of patent content suggests that fabrication technologies are the most important area within the technological development of semiconductors, whilst circuit design and testing technologies are beginning to increase in significance. In addition, it is examined how private sectors and public institutions have contributed to generate technological capabilities, and the relationship between them has been changed during the development processes. It is found that Korean firms enhanced their technological capabilities from the learning and assimilation of imported technology to enhanced in-house R&D capabilities in the later stage. The support of public institution and government policy also played significant role to this successful transformation in conjunction with vigorous R&D investment of public sector.
Disputes over the Intellectual Property Rights of Telecommunications Standardization
Park, Ki-Shik ; Kim, Young-Tae ; Sohn, Hong ;
ETRI Journal, volume 20, issue 1, 1998, Pages 74~74
Both telecommunications standardization activities and an intellectual property rights (IPRs) system are regarded as effective mechanisms for improving social benefits. Because of inherent conflicts that exist between the two, however, serious problems are generated in the international arena where the competition for technology development and markets is becoming increasingly fierce. In this paper, ways of harmonizing the relationship between the two are explored and explained. For this purpose, telecommunications standardization and IPRs protection mechanisms are described, and their positive and negative effects as well as their inter-relationship are also analyzed. In addition, IPR case studies related to international standardization are explained and analyzed. The Current status and problems of IPRs policy of major international standardization organizations are analyzed as well. Finally, based on the results of the analyses, viable policy recommendations and research strategies for more comprehensive study of the above problems are proposed.
The Patentability of a Computer Program as a Function of Its Relational Characteristic with Hardware
Lee, Sang-Mu ;
ETRI Journal, volume 20, issue 1, 1998, Pages 96~96
The patentability of computer program has been discussed because of its deviation from the traditional definition of a patent. The relativities of computer programs to hardware are classified to measure the relative patentability of computer programs in this paper. It can be seen through the patentability analysis that the change in patentability basically follows an exponent part of the function is a damping factor that determines a patentability degree or trend. The basic patentability of computer programs is revealed when the damping factor value is 1, and a statistical patent specification, an appropriate expression of applicability and substantiality of computer programs is needed to acquire a patent right.