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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal DOI :
Electronics and Telecommunications Research Institute
Editor in Chief :
Volume & Issues
Volume 31, Issue 6 - Dec 2009
Volume 31, Issue 5 - Oct 2009
Volume 31, Issue 4 - Aug 2009
Volume 31, Issue 3 - Jun 2009
Volume 31, Issue 2 - Apr 2009
Volume 31, Issue 1 - Feb 2009
Selecting the target year
Semiconducting ZnO Nanofibers as Gas Sensors and Gas Response Improvement by
Moon, Jae-Hyun ; Park, Jin-Ah ; Lee, Su-Jae ; Zyung, Tae-Hyoung ;
ETRI Journal, volume 31, issue 6, 2009, Pages 636~641
DOI : 10.4218/etrij.09.1209.0004
ZnO nanofibers were electro-spun from a solution containing poly 4-vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline wurtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and
gas sensing responses are demonstrated. In particular, the
-deposited ZnO nanofibers exhibit a remarkable gas sensing response to
gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide-based gas sensors.
Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure
Lee, Jong-Hee ; Lee, Jeong-Ik ; Chu, Hye-Yong ;
ETRI Journal, volume 31, issue 6, 2009, Pages 642~646
DOI : 10.4218/etrij.09.1209.0005
Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000
without any change in the electroluminescence spectra.
Fabrication and Characterization of an OTFT-Based Biosensor Using a Biotinylated F8T2 Polymer
Lim, Sang-Chul ; Yang, Yong-Suk ; Kim, Seong-Hyun ; Kim, Zin-Sig ; Youn, Doo-Hyeb ; Zyung, Tae-Hyoung ; Kwon, Ji-Young ; Hwang, Do-Hoon ; Kim, Do-Jin ;
ETRI Journal, volume 31, issue 6, 2009, Pages 647~652
DOI : 10.4218/etrij.09.1209.0001
Solution-processable organic semiconductors have been investigated not only for flexible and large-area electronics but also in the field of biotechnology. In this paper, we report the design and fabrication of biosensors based on completely organic thin-film transistors (OTFTs). The active material of the OTFTs is poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer functionalized with biotin hydrazide. The relationship between the chemoresistive change and the binding of avidin-biotin moieties in the polymer is observed in the output and on/off characteristics of the OTFTs. The exposure of the OTFTs to avidin causes a lowering of ID at
= -40 V and
= -40 V of nearly five orders of magnitude.
Channel Protection Layer Effect on the Performance of Oxide TFTs
KoPark, Sang-Hee ; Cho, Doo-Hee ; Hwang, Chi-Sun ; Yang, Shin-Hyuk ; Ryu, Min-Ki ; Byun, Chun-Won ; Yoon, Sung-Min ; Cheong, Woo-Seok ; Cho, Kyoung-Ik ; Jeon, Jae-Hong ;
ETRI Journal, volume 31, issue 6, 2009, Pages 653~659
DOI : 10.4218/etrij.09.1209.0043
We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.
Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors
Cheong, Woo-Seok ; Lee, Jeong-Min ; Lee, Jong-Ho ; KoPark, Sang-Hee ; Yoon, Sung-Min ; Byun, Chun-Won ; Yang, Shin-Hyuk ; Chung, Sung-Mook ; Cho, Kyoung-Ik ; Hwang, Chi-Sun ;
ETRI Journal, volume 31, issue 6, 2009, Pages 660~666
DOI : 10.4218/etrij.09.1209.0049
We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below
, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as
, the electrical properties are analyzed. After post-annealing at
for 1 hour in an
ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a
IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of
, an IGZO-TFT with heat-treated
IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.
Optical and Dielectric Properties of Chalcogenide Glasses at Terahertz Frequencies
Kang, Seung-Beom ; Kwak, Min-Hwan ; Park, Bong-Je ; Kim, Sung-Il ; Ryu, Han-Cheol ; Chung, Dong-Chul ; Jeong, Se-Young ; Kang, Dae-Won ; Choi, Sang-Kuk ; Paek, Mun-Cheol ; Cha, Eun-Jong ; Kang, Kwang-Yong ;
ETRI Journal, volume 31, issue 6, 2009, Pages 667~674
DOI : 10.4218/etrij.09.1209.0028
Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses:
. The absorption coefficients
, complex refractive index n(
), and complex dielectric constants
were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.
Optical and Electrical Properties of
Lim, Jung-Wook ; Yun, Sun-Jin ; Kim, Je-Ha ;
ETRI Journal, volume 31, issue 6, 2009, Pages 675~679
DOI : 10.4218/etrij.09.1209.0033
(TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of
. The refractive indices of
are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.
High Performance Piezoelectric Microspeakers and Thin Speaker Array System
Kim, Hye-Jin ; Koo, Kun-Mo ; Lee, Sung-Q ; Park, Kang-Ho ; Kim, Jong-Dae ;
ETRI Journal, volume 31, issue 6, 2009, Pages 680~687
DOI : 10.4218/etrij.09.1209.0010
This paper reports on an improved piezoelectric microspeaker with a high sound pressure level of 90 dB, a total harmonic distortion of less than 15%, and coherence higher than 0.9. The fabricated Pb(Zr,Ti)
(PZT) microspeakers have a thickness of only 1 mm including the speaker frame and an active area of 18 mm
20 mm. To achieve higher sound pressure and lower distortion, the PZT piezoelectric microspeaker has a well-designed speaker frame and a piezoelectric diaphragm consisting of a tilted PZT membrane and silicone buffer layer. From the simulation and measurement results, we confirmed that the silicon buffer layer can lower the first resonant frequency, which enhances the microspeaker's sound pressure at a low frequency range and can also reduce useless distortion generated by the harmonics. The fabricated PZT piezoelectric microspeakers are implemented on a multichannel speaker array system for personal acoustical space generation. The output sound pressure at a 30 cm distance away from the center of the speaker line array is 15 dB higher than the sound pressure at the neighboring region 30 degrees from the vertical axis.
Sustainable Vibration Energy Harvesting Based on Zr-Doped PMN-PT Piezoelectric Single Crystal Cantilevers
Moon, Seung-Eon ; Lee, Sung-Q ; Lee, Sang-Kyun ; Lee, Young-Gi ; Yang, Yil-Suk ; Park, Kang-Ho ; Kim, Jong-Dae ;
ETRI Journal, volume 31, issue 6, 2009, Pages 688~694
DOI : 10.4218/etrij.09.1209.0015
In this paper, we present the results of a preliminary study on the piezoelectric energy harvesting performance of a Zr-doped
(PMN-PZT) single crystal beam. A novel piezoelectric beam cantilever structure is used to demonstrate the feasibility of generating AC voltage during a state of vibration. The energy-harvesting capability of a PMN-PZT beam is calculated and tested. The frequency response of the cantilever device shows that the first mode resonance frequency of the excitation model exists in the neighborhood of several hundreds of hertz, which is similar to the calculated value. These tests show that several significantly open AC voltages and sub-mW power are achieved. To test the possibility of a small scale power source for a ubiquitous sensor network service, energy conversion and the testing of storage experiment are also carried out.
Electroactive Polymer Actuator for Lens-Drive Unit in Auto-Focus Compact Camera Module
Lee, Hyung-Kun ; Choi, Nak-Jin ; Jung, Sun-Kyung ; Park, Kang-Ho ; Jung, He-Won ; Shim, Jae-Kyu ; Ryu, Jae-Wook ; Kim, Jong-Dae ;
ETRI Journal, volume 31, issue 6, 2009, Pages 695~702
DOI : 10.4218/etrij.09.1209.0023
We propose a lens-drive unit composed of an ionic polymer-metal composite (IPMC) for an auto-focus compact camera module in cellular phones to solve the power consumption problem of voice coil motors which are widely used in commercial products. In this research, an IPMC incorporated into a lens-drive unit is designed to implement a large displacement in low-power consumption by using an anisotropic plasma treatment. Experimental results show that a camera module containing IPMCs can control and maintain the position of the lens by using proportional integral derivative control with a photo-reflective position sensor despite the non-linear actuation behavior of IPMCs. We demonstrate that the fabrication and commercialization of a lens actuator that has a large displacement and low power consumption using IPMCs is possible in the near future.
Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
Ryu, Ho-Jun ; Kwon, Se-In ; Cheon, Sang-Hoon ; Cho, Seong-Mok ; Yang, Woo-Seok ; Choi, Chang-Auck ;
ETRI Journal, volume 31, issue 6, 2009, Pages 703~708
DOI : 10.4218/etrij.09.1209.0014
Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.
A Novel Reconfigurable Processor Using Dynamically Partitioned SIMD for Multimedia Applications
Lyuh, Chun-Gi ; Suk, Jung-Hee ; Chun, Ik-Jae ; Roh, Tae-Moon ;
ETRI Journal, volume 31, issue 6, 2009, Pages 709~716
DOI : 10.4218/etrij.09.1209.0021
In this paper, we propose a novel reconfigurable processor using dynamically partitioned single-instruction multiple-data (DP-SIMD) which is able to process multimedia data. The SIMD processor and parallel SIMD (P-SIMD) processor, which is composed of a number of SIMD processors, are usually used these days. But these processors are inefficient because all processing units (PUs) should process the same operations all the time. Moreover, the PUs can process different operations only when every SIMD group operation is predefined. We propose a processor control method which can partition parallel processors into multiple SIMD-based processors dynamically to enhance efficiency. For performance evaluation of the proposed method, we carried out the inverse transform, inverse quantization, and motion compensation operations of H.264 using processors based on SIMD, P-SIMD, and DP-SIMD. Experimental results show that the DP-SIMD control method is more efficient than SIMD and P-SIMD control methods by about 15% and 14%, respectively.
A 1.2 V 12 b 60 MS/s CMOS Analog Front-End for Image Signal Processing Applications
Jeon, Young-Deuk ; Cho, Young-Kyun ; Nam, Jae-Won ; Lee, Seung-Chul ; Kwon, Jong-Kee ;
ETRI Journal, volume 31, issue 6, 2009, Pages 717~724
DOI : 10.4218/etrij.09.1209.0025
This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13
CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73
and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.
Design of Gate-Ground-NMOS-Based ESD Protection Circuits with Low Trigger Voltage, Low Leakage Current, and Fast Turn-On
Koo, Yong-Seo ; Kim, Kwang-Soo ; Park, Shi-Hong ; Kim, Kwi-Dong ; Kwon, Jong-Kee ;
ETRI Journal, volume 31, issue 6, 2009, Pages 725~731
DOI : 10.4218/etrij.09.1209.0045
In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate-triggered NMOS and a gate-substrate-triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn-on speed. The proposed ESD protection devices are designed using 0.13
CMOS technology. The experimental results show that the proposed substrate-triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn-on time of 37 ns. The proposed gate-substrate-triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.
Digital Audio Effect System-on-a-Chip Based on Embedded DSP Core
Byun, Kyung-Jin ; Kwon, Young-Su ; Park, Seong-Mo ; Eum, Nak-Woong ;
ETRI Journal, volume 31, issue 6, 2009, Pages 732~740
DOI : 10.4218/etrij.09.1209.0029
This paper describes the implementation of a digital audio effect system-on-a-chip (SoC), which integrates an embedded digital signal processor (DSP) core, audio codec intellectual property, a number of peripheral blocks, and various audio effect algorithms. The audio effect SoC is developed using a software and hardware co-design method. In the design of the SoC, the embedded DSP and some dedicated hardware blocks are developed as a hardware design, while the audio effect algorithms are realized using a software centric method. Most of the audio effect algorithms are implemented using a C code with primitive functions that run on the embedded DSP, while the equalization effect, which requires a large amount of computation, is implemented using a dedicated hardware block with high flexibility. For the optimized implementation of audio effects, we exploit the primitive functions of the embedded DSP compiler, which is a very efficient way to reduce the code size and computation. The audio effect SoC was fabricated using a 0.18
CMOS process and evaluated successfully on a real-time test board.
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines
Chang, Woo-Jin ; Lim, Jong-Won ; Ahn, Ho-Kyun ; Ji, Hong-Gu ; Kim, Hae-Choen ;
ETRI Journal, volume 31, issue 6, 2009, Pages 741~748
DOI : 10.4218/etrij.09.1209.0012
We present an analysis of microstrip coupled lines (MCLs) used to improve the stability of a 60 GHz narrowband amplifier. The circuit has a 4-stage structure implementing MCLs instead of metal-insulator-metal (MIM) capacitors for the unconditional stability of the amplifier and yield enhancement. The stability parameter, U, is used to compare the stability of MCLs with that of MIM capacitors. Experimental results show that MCLs are more stable than MIM capacitors with the same capacitances as MCLs because the parasitic parallel resistances of MCLs are lower than those of MIM capacitors. Moreover, the bandwidth of an amplifier using MCLs is narrower than one using MIM capacitors because the parasitic series inductances of MCLs are higher than those of MIM capacitors.
Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
Lee, Jong-Min ; Min, Byoung-Gue ; Kim, Seong-Il ; Lee, Kyung-Ho ; Kim, Hae-Cheon ;
ETRI Journal, volume 31, issue 6, 2009, Pages 749~754
DOI : 10.4218/etrij.09.1209.0038
The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency (
) of 129 GHz and a maximum oscillation frequency (
) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1
. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.
Low Voltage CMOS LC VCO with Switched Self-Biasing
Min, Byung-Hun ; Hyun, Seok-Bong ; Yu, Hyun-Kyu ;
ETRI Journal, volume 31, issue 6, 2009, Pages 755~764
DOI : 10.4218/etrij.09.1209.0046
This paper presents a switched self-biasing and a tail current-shaping technique to suppress the 1/f noise from a tail current source in differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillators (VCOs). The proposed LC VCO has an amplitude control characteristic due to the creation of negative feedback for the oscillation waveform amplitude. It is fabricated using a 0.13
CMOS process. The measured phase noise is -117 dBc/Hz at a 1 MHz offset from a 4.85 GHz carrier frequency, while it draws 6.5 mA from a 0.6 V supply voltage. For frequency tuning, process variation, and temperature change, the amplitude change rate of the oscillation waveform in the proposed VCO is 2.1 to 3.2 times smaller than that of an existing VCO with a fixed bias. The measured amplitude change rate of the oscillation waveform for frequency tuning from 4.55 GHz to 5.04 GHz is 131 pV/Hz.
40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth
Kwon, Yong-Hwan ; Choe, Joong-Seon ; Sim, Jae-Sik ; Kim, Sung-Bock ; Yun, Ho-Gyeong ; Choi, Kwang-Seong ; Choi, Byung-Seok ; Nam, Eun-Soo ;
ETRI Journal, volume 31, issue 6, 2009, Pages 765~769
DOI : 10.4218/etrij.09.1209.0039
In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.
Reconfigurable Optical Add-Drop Multiplexer Using a Polymer Integrated Photonic Lightwave Circuit
Shin, Jang-Uk ; Han, Young-Tak ; Han, Sang-Pil ; Park, Sang-Ho ; Baek, Yong-Soon ; Noh, Young-Ouk ; Park, Kang-Hee ;
ETRI Journal, volume 31, issue 6, 2009, Pages 770~777
DOI : 10.4218/etrij.09.1209.0024
We have developed a fully functional reconfigurable optical add-drop multiplexer (ROADM) switch module using a polymer integrated photonic lightwave circuit technology. The polymer variable optical attenuator (VOA) array and digital optical switch array are integrated into one polymer PLC chip and packaged to form a 10-channel VOA integrated optical switch module. Four of these optical switch modules are used in the ROADM switch module to execute 40-channel switching and power equalization. As a wavelength division multiplexer (WDM) filter device, two C-band 40-channel athermal arrayed waveguide grating WDMs are used in the ROADM module. Optical power monitoring of each channel is carried out using a 5% tap PD. A controller and firmware having the functions of a 40-channel switch and VOA control, optical power monitoring, as well as TEC temperature control, and data communication interfaces are also developed in this study.
Gold Stripe Optical Waveguides Fabricated by a Novel Double-Layered Liftoff Process
Kim, Jin-Tae ; Park, Sun-Tak ; Park, Seung-Koo ; Kim, Min-Su ; Lee, Myung-Hyun ; Ju, Jung-Jin ;
ETRI Journal, volume 31, issue 6, 2009, Pages 778~783
DOI : 10.4218/etrij.09.1209.0042
To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional
layer under conventional photoresists. By patterning a photoresist and over-etching the
, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.
270 MHz Full HD H.264/AVC High Profile Encoder with Shared Multibank Memory-Based Fast Motion Estimation
Lee, Suk-Ho ; Park, Seong-Mo ; Park, Jong-Won ;
ETRI Journal, volume 31, issue 6, 2009, Pages 784~794
DOI : 10.4218/etrij.09.1209.0007
We present a full HD (1080p) H.264/AVC High Profile hardware encoder based on fast motion estimation (ME). Most processing cycles are occupied with ME and use external memory access to fetch samples, which degrades the performance of the encoder. A novel approach to fast ME which uses shared multibank memory can solve these problems. The proposed pixel subsampling ME algorithm is suitable for fast motion vector searches for high-quality resolution images. The proposed algorithm achieves an 87.5% reduction of computational complexity compared with the full search algorithm in the JM reference software, while sustaining the video quality without any conspicuous PSNR loss. The usage amount of shared multibank memory between the coarse ME and fine ME blocks is 93.6%, which saves external memory access cycles and speeds up ME. It is feasible to perform the algorithm at a 270 MHz clock speed for 30 frame/s real-time full HD encoding. Its total gate count is 872k, and internal SRAM size is 41.8 kB.
Design of AT-DMB Baseband Receiver SoC
Lee, Joo-Hyun ; Kim, Hyuk ; Kim, Jin-Kyu ; Koo, Bon-Tae ; Eum, Nak-Woong ; Lee, Hyuck-Jae ;
ETRI Journal, volume 31, issue 6, 2009, Pages 795~802
DOI : 10.4218/etrij.09.1209.0009
This paper presents the design of an advanced terrestrial digital multimedia broadcasting (AT-DMB) baseband receiver SoC. The AT-DMB baseband is incorporated into a hierarchical modulation scheme consisting of high priority (HP) and low priority (LP) stream decoders. The advantages of the hierarchical modulation scheme are backward compatibility and an enhanced data rate. The structure of the HP stream is the same as that of the conventional T-DMB system; therefore, a conventional T-DMB service is possible by decoding multimedia data in an HP stream. An enhanced data rate can be achieved by using both HP and LP streams. In this paper, we also discuss a time deinterleaver that can deinterleave data for a time duration of 384 ms or 768 ms. The interleaving time duration is chosen using the LP symbol mapping scheme. Furthermore, instead of a Viterbi decoder, a turbo decoder is adopted as an inner error correction system to mitigate the performance degradation due to a smaller symbol distance in a hierarchically modulated LP symbol. The AT-DMB baseband receiver SoC is fabricated using 0.13
technology and shows successful operation with a 50 mW power dissipation.
White ACPEL Device with ZnS:Cu,Cl,
, and CaS:
Phosphors Using a Layered Structure
Park, Bong-Je ; Seo, Hong-Seok ; Ahn, Jun-Tae ; Oh, Dae-Kon ; Chung, Woon-Jin ; Han, Ji-Yeon ; Jang, Ho-Seong ; Jeon, Duk-Young ;
ETRI Journal, volume 31, issue 6, 2009, Pages 803~805
DOI : 10.4218/etrij.09.0209.0235
Improvement of the color rendering index (CRI) and luminance of a white alternate current powder electroluminescent (ACPEL) device has been attempted using ZnS:Cu,Cl,
:Ce (TAG:Ce), and CaS:Eu phosphors with a layered structure. The device with TAG:Ce and ZnS:Cu,Cl phosphors showed a CRI of 75, with a luminance increase of about 30% depending on the thickness of the TAG:Ce. Further CRI improvement was attempted using CaS:Eu. When they were separately screen-printed, the CRI was increased up to 89 with no decrease in luminance.
Computationally Efficient 2-D DOA Estimation Using Two Parallel Uniform Linear Arrays
Cao, Hailin ; Yang, Lisheng ; Tan, Xiaoheng ; Yang, Shizhong ;
ETRI Journal, volume 31, issue 6, 2009, Pages 806~808
DOI : 10.4218/etrij.09.0209.0246
A new computationally efficient algorithm-based propagator method for two-dimensional (2-D) direction-of-arrival (DOA) estimation is proposed, which uses two parallel uniform linear arrays. The algorithm takes advantage of the special structure of the array which enables 2-D DOA estimation without pair matching. Simulation results show that the proposed algorithm achieves very accurate estimation at a computational cost 4 dB lower than that of standard methods.
Stochastic Modeling and Concurrent Simulation of the Game of Golf
Yoon, Sung-Roh ; Lee, Se-Il ; Oh, Seong-Jun ;
ETRI Journal, volume 31, issue 6, 2009, Pages 809~811
DOI : 10.4218/etrij.09.0209.0257
We propose a novel simulation method for modeling the game of golf using SystemC, a system description language that allows modeling of a concurrent system's behavior. Utilizing the proposed simulator, we compare different outing formats of golf, namely, regular and shotgun, in terms of playing time. Our simulation results reveal that the shotgun format can take longer than the regular format if the number of groups in a golf course exceeds 33 for the scenario we tested, confirming the belief that the shotgun format can take longer than the regular format. We also justify our simulation by comparing the simulation and analytical results.