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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of Sensor Science and Technology
Journal Basic Information
Journal DOI :
The Korean Sensors Society
Editor in Chief :
Volume & Issues
Volume 6, Issue 6 - Nov 1997
Volume 6, Issue 5 - Sep 1997
Volume 6, Issue 4 - Jul 1997
Volume 6, Issue 3 - May 1997
Volume 6, Issue 2 - Mar 1997
Volume 6, Issue 1 - Jan 1997
Selecting the target year
Fiber-Optic Interferometric Sensor System for Remote Sensing and Its Application to Pressure Sensing
Yeh, Yun-Hae ; Jung, Hwan-Soo ; Lah, Doh-Sung ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 172~179
This paper describes a multiplexed-multivariate fiber-optic interferometric sensor system with remote sensing capability. Signal processor of the implemented sensor system is designed as a digital fringe counter that is well adapted to the signal processing of the remote fiber-optic Fabry-Perot interferometric sensor array. By summing up the reported optical data of the optical fiber, a guideline for choosing the optical effect suitable for a specific measurand is presented. As an example, a pressure sensing device that utilizes the strain-optic effect of the optical fiber by attaching it onto a stainless steel diaphragm of which diameter is 4.3 cm, is built and attached to the sensor system. The changes in optical phase difference of the fiber-optic Fabry-Perot interferometric press ure sensor while filling a water tank 2 meters high, was counted by the half-fringe counting signal processor. Test results showed that the measurement error is less than
over the measured range of 2 meters.
Sensitivity Improvement and Operating Characteristics Analysis of the Pressure Sensitive Field Effect Transistor(PSFET) Using Highly-Oriented ZnO Piezoelectric Thin Film
Lee, Jeong-Chul ; Cho, Byung-Woog ; Kim, Chang-Soo ; Nam, Ki-Hong ; Kwon, Dae-Hyuk ; Sohn, Byung-Ki ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 180~187
We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.
Characteristics of PLT Thin Films on MgO Substrates and Fabrication of Infrared Sensor
Cho, Sung-Hyun ; Jung, Jae-Mun ; Lee, Jae-Gon ; Kim, Ki-Wan ; Hahm, Sung-Ho ; Choi, Sie-Young ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 188~193
The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using PbO-rich target with varing La contents. The substrate temperature, working pressure,
, and RF power density of PLT thin films were
10mTorr, 10/1, and
, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above
and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.
MAGFET Hybrid IC with Frequency Output
Kim, Si-Hon ; Lee, Cheol-Woo ; Nam, Tae-Chul ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 194~199
When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is
. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.
A Study on Alkali ion-Sensitivity of
Fabricated by Low Pressure Chemical Vapor Deposition
Shin, P.K. ; Lee, D.C. ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 200~206
, we have fabricated silicon oxynitride (
) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios(
)) to 0.2, 0.5 and 2 with fixed gas flow of
. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.
Fabrication of Hydrogel and Gas Permeable Membranes for FET Type Dissolved
Sensor by Photolithographic Method
Park, Lee-Soon ; Kim, Sang-Tae ; Koh, Kwang-Nak ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 207~213
A field effect transistor(FET) type dissolved carbon dioxide(
) sensor with a double layer structure of hydrogel membrane and
gas permeable membrane was fabricated by utilizing a
ion selective field effect transistor(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N',N'-tetramethyl othylenediarnine(TED) as
quencher without using polyester film as a
blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type
sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of
in aqueous solution with high sensitivity.
Thin-film optical waveguide
-ion sensor using the evanescent field absorption
Lee, Su-Mi ; Koh, Kwang-Nak ; Kang, Shin-Won ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 214~220
A thin film optical waveguide sensor has been developed to measure and analyze quantitatively some inherent optical properties of biochemical substances. In this paper, two different kinds of thickness of thin film waveguide were prepared by RF sputtering of Corning-7059 glass(n = 1.588 at
, Ar laser) on Pyrex glass substrates. We made a sensing membrane coated on the thin film waveguide with the poly(vinyl chloride-co-vinyl acetate-co-vinyl alcohol) (91 : 3 : 6) copolymer membrane based on
-selective chromoionophore and
-selective neutral ionophore and then proposed the thin film opptical waveguide ion sensor which can select a potassium ion. This sensor based ell the absorbance change by utilizing chromoionophore and neutral ionophore, which changes their absorption spectrum in the UV-vis region upon complexation of the corresponding ionic species, have been reported. The sensitivity dependence of the proposed sensor on interaction length, waveguide thickness, and content of a chromoionophore was investigated. This sensor has the measurement range of
concentration and 90% response time of duration within 1 min. Also, our thin film optical waveguide sensor using the evanescent field was investigated as compared with conventional transmission sensor or optode sensor by the optical fiber. The sensitivity of thin-film waveguide
sensor is higher than that of the conventional transmission sensor. The proposed sensor is expected to be useful to biochemical, medical, environmental inspection and so on.
Fabrication of Pd/NiCr gate MISFET sensor for detecting hydrogen dissolved in Oil.
Kim, Gop-Sick ; Lee, Jae-Gon ; Hahm, Sung-Ho ; Choi, Sie-Young ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 221~227
The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.
A Study on the Counter Program of the Radiation Detector Using 8051 Micro-controller
Kim, Yong-Duk ; Park, Se-Kwang ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 228~236
Radioactive materials need to control, measure and protect precisely the overflow because they are dangerous. In this paper, GM-counter type radiation detector system, that can precisely measure the quantity of radioactivity using improved counting program is designed and program that can store and transfer the counted data is studied. The manufactured system, counting system of GM-counter type radiation detector, and counter program can be utilized to measure them at various methods in an atomic power plant and research centers.
Fabrication of low power micro-heater for micro-gas sensor II. Characteristics of micro-gas sensor
Chung, Wan-Young ; Lee, Sang-Moon ; Kang, Bong-Hwi ; Jang, Dong-Kun ; Lee, Duk-Dong ; Yamazoe, Noboru ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 237~244
A new planar-type microsensor, which had a platinum heater and a sensing layer on the same plane was fabricated on silicon substrate with stress-relieved PSG(phosphosilicate glass)/
(800nm/150nm) diaphragm. The proposed planar-type microsensor could be fabricated by simple silicon process using only 3 masks for photolithography process compared with 5 or 6 masks of the typical micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of the fabricated microheater. Although there are some discrepancy between the simulation result and the result from the fabricated microheater, the thermal simulation by FEM was proved to be an useful method to evaluate the thermal properties of microheater. The sensing characteristics of the fabricated microsensor with the planar-type heater were investigated also.
Optimum Parameter Design for Defibrillator
Yoon, H.Y. ; Ko, H.W. ;
Journal of Sensor Science and Technology , volume 6, issue 3, 1997, Pages 245~251
In designing defibrillator, several parameters such as patient's transthoracic impedance, output energy level, peak current, and time duration of current waveform must be considered to generate optimum electrical shocks on the heart. Patient's transthoracic impendence depends on the physical and health condition of patient. In this study, before the development of a defibrillator, the range of above parameters value as circuit elements was determined to derive optimal waveform by predicting and analyzing the performance of designed circuit by means of simulation with the software, P-Spice. The efficiency of parameter design was verified through the performance test with the developed defibrillator.