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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of Sensor Science and Technology
Journal Basic Information
Journal DOI :
The Korean Sensors Society
Editor in Chief :
Volume & Issues
Volume 7, Issue 6 - Nov 1998
Volume 7, Issue 5 - Sep 1998
Volume 7, Issue 4 - Jul 1998
Volume 7, Issue 3 - May 1998
Volume 7, Issue 2 - Mar 1998
Volume 7, Issue 1 - Jan 1998
Selecting the target year
Fabrication and Characteristics of the MAGFET
Kim, Si-Hon ; Lee, Cheol-Woo ; Lee, Jung-Hwan ; Nam, Tae-Chul ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 1~8
We have simulated the operating characteristics of the magnetotransistor(MAGFET) by the finite element method and suggested the optimum design conditions to get a maximum sensitivity, The magnetotransistor has been fabricated by CMOS standard processing according to the suggested design conditions and investigated its electromagnetic characteristics. The sensitivity of the magnetotransistor depends on the ratio of width(W) to length(L) of active area rather than its size, and has a maximum when W/L = 1. The relative sensitivity of a fabricated magnetotransistor was 2.53 %/T.
Acoustic Scattering Analysis of a Spherical Shell using a coupled FE-BE Method
Jarng, Soon-Suck ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 9~16
This paper describes how the directivity pattern of the scattered sound pressure is distributed when a plane acoustic wave is incident on a rigid or soft spherical shell underwater. A coupled Finite Element-Boundary Element method is developed as a numerical technique. The result of the coupled FE-BE method is agreed with theoretical solution for algorithmic confirmation.
Fabrication and Characteristics of HARP Image Pickup Tube Using a-Se Photoconductive Film
Park, Wug-Dong ; Kim, Ki-Wan ; Kubota, Misao ; Kato, Tsutomu ; Suzuki, Shiro ; Tanioka, Kenkichi ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 17~22
A HARP (high-gain avalanche rushing amorphous photoconductor) image pickup tube using
thick a-Se photoconductive film was fabricated and its characteristics were investigated. When the target voltage was increased more than 360 V, the signal current increases rapidly but the dark current of the tube was suppressed less than 3.2 nA up to the voltage of 490 V And the quantum efficiency of the target was about 4.3 at the electric field of
and the wavelength of 440 nm. Also the amplitude response of the HARP tube was 7.5% at 800 TV lines, and the decay lag was 3.4%
Time Delay Compensation of the Image Sensor in Electro-Optical Tracking System
Ma, Jin-Suk ; Kang, Myung-Sook ; Kwon, Woo-Hyen ; Im, Sung-Woon ; Byun, Seung-Whan ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 23~30
In this paper, we analyzed the effect of the time delay of the image sensor in the tracking loop of Electro-Optical Tracking System(EOTS). we showed that Smith predictor can greatly improve the stability and various performances of EOTS with time delay. And also, to verify the realistic validity, we executed the experiment in EOTS recently developed, and confirmed the effectiveness in EOTS.
Design of Bias Circuit for Measuring the Multi-channel ISFET
Cho, Byung-Woog ; Kim, Young-Jin ; Kim, Chang-Soo ; Choi, Pyung ; Sohn, Byung-Ki ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 31~38
Multi-channel sensors can be used to increase the reliability and remove the random iloise in ion-sensitive field effect transistors(ISFETs). Multi-channel sensors is also an essential step toward potential fabrication of sensors for several ionic species in one device. However, when the multi-channel sensors are separately biased, the biasing problems become difficult, that is to say, the bias circuit is needed as many sensors. In this work, a circuit for biasing the four pH-ISFETs in null-balance method, where bias voltages are switched, was proposed. The proposed concept is need only one bias circuit for the four sensors. Therefore it has advantages of smaller size and lower power consumption than the case that all sensors are separately biased at a time. The proposed circuit was tested with discrete devices and its performance was investigated. In the recent trend, sensor systems are implemented as portable systems. So the verified measurement circuit was integrated by using the CMOS circuit. Fortunately, ISFET fabrication process can be compatible with CMOS process. Full circuit has a mask area of
. In the future, this step will be used for developing the smart sensor system with ISFET.
Fabrication of Low Reflectance Optical Fiber Mirrors
Park, Jae-Hee ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 39~44
Low reflectance optical fiber mirrors in the continuous length of the single mode fiber were fabricated using mechanical splices and pieces of fiber coated with
dielectric film at the cleaved end. When fiber mirrors of refelctance of about 1% were produced, the insertion loss ranged from 0.055dB to 0.3dB and the average insertion loss was 0.15 dB. These mirrors could be produced easy in the field.
The Study on Deposition and Characteristics of Pt-Co Alloy Thin Films for RTD Temperature Sensors
Chung, Gwiy-Sang ; Noh, Sang-Soo ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 45~50
Platinum-Cobalt alloy thin films were deposited on
substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the
substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt :
, Co :
, working vacuum of 10 mTorr and annealing conditions of
and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was
, respectively and the TCR value of Pt-Co alloy thin films with thickness of
in the temperature range of
. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.
Structural and Dielectric Properties of PLT Thin Plates
Lee, Jae-Man ; Park, Ki-Cheol ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 51~60
(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan
thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at
for 2 hours in ambient powder of
were 360 and 0.02, respectively.
Superconducting properties of layer-by-layer grown
thin film prepared by pulsed laser deposition
Kim, In-Seon ; Lim, Hae-Ryong ; Kim, Dong-Ho ; Park, Yon-Ki ; Park, Jong-Chul ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 61~66
High quality c-axis oriented
films were prepared using the pulsed laser deposition on
(100) substrate. The atomically smooth
surface with terraces one unit cell in height could be obtained by a high temperature annealing.
thin films deposited on the substrates exhibited layer-by-layer growth with a c-axis unit cell height.
thin films thus prepared showed critical temperature
K with transition width
K, room temperature resistivity of
, and critical current density
at 77 K.
Photoelectric Properties of PbTe/CuPc Bilayer Thin Films
Lee, Hea-Yeon ; Kang, Young-Soo ; Park, Jong-Man ; Lee, Jong-Kyu ; Jeong, Jung-Hyun ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 67~72
The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current(
and open-circuit voltage(
) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and
, respectively. Based on the results of QE and
, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.
Silicon Surface Micro-machining by Anhydrous HF Gas-phase Etching with Methanol
Jang, W.I. ; Choi, C.A. ; Lee, C.S. ; Hong, Y.S. ; Lee, J.H. ; Baek, J.T. ; Kim, B.W. ;
Journal of Sensor Science and Technology , volume 7, issue 1, 1998, Pages 73~82
In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and
vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthdsilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced striction and residual product.