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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of Sensor Science and Technology
Journal Basic Information
Journal DOI :
The Korean Sensors Society
Editor in Chief :
Volume & Issues
Volume 7, Issue 6 - Nov 1998
Volume 7, Issue 5 - Sep 1998
Volume 7, Issue 4 - Jul 1998
Volume 7, Issue 3 - May 1998
Volume 7, Issue 2 - Mar 1998
Volume 7, Issue 1 - Jan 1998
Selecting the target year
Fabrication and Characteristics of the Hall Sensor Using Differential Detection Method
Jeong, W.C. ; Nam, T.C. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 225~233
The principle, design, and application of a gear-tooth sensor for the rough environmental conditions such as high temperatures of up to
are studied. The rotation of a tooth wheel is detected by a couple of Hall elements manufactured on the SIMOX wafer by a methode of differential detection using bipolar silicon technology. The product sensitivity of the Hall element is about 510 V/AT over a wide temperature range of
. The differential Hall sensor makes the maximum possible distance between sensor and tooth wheel wider than that when single Hall element is used over a wide temperature range, and the maximum detectable distance is 4.5mm at driving current of 4mA.
TL Characteristics of CsI Single Crystal Scintillators and their Growth Conditions
Doh, S.H. ; Lee, W.G. ; Hong, S.Y. ; Bang, S.W. ; Kang, K.J. ; Kim, D.S. ; Kim, W. ; Kang, H.D. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 234~242
Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be
. The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was
The Fabrication and Characteristics of FET-Type Electrolyte Sensors by Using Sol-Gel Technique.
Moon, S.Y. ; Cho, B.W. ; Kim, C.S. ; Koh, K.N. ; Sohn, B.K. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 243~253
PVC membrane, which has been used for membrane of electrolyte sensors, shortened sensor lifetime due to poor adhesion to sensor surface and exhibited difficulty in standardization and mass-production. To overcome these problems, the membrane solution was prepared with neutral carrier, matrix(TEOS:DEDMS=1:3), solvent(ethanol), and a catalyzer(HCl). The fabricated electrolyte sensors showed typical electrical characteristics of MISFET (metal-insulator-semiconductor field-effect transistor). The K-, Ca- and Na-ISFETs showed sensitivity of 53, 25 and 50 mV/decade in wide concentration range, respectively. The response time was about 90 seconds and the drift was 0.05mV/hour. These results suggest that the sol-gel method and the lift-off technique can be applied to formation of membranes and expected to improve mass-productivity, standardzation of the sensors.
The Application of Octa-Substituted Metallophthalocyanine Langmuir-Blodgett films for
Kwon, H.J. ; Lee, Y.J. ; Chang, Y.K. ; Kim, J.D. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 254~262
Multilayer Langmuir-Blodgett (LB) films coated on quartz crystal microbalance (QCM) of octa-substituted metallophhtalocyanines (
, M = Cu, Co, and Sn) and dihydrogen phthalocyanines (
) were used to quantify
concentrations. They were exposed to various concentrations of
. Among the four phthalocyanines we tested, the metal-free
was observed to be most sensitive to
. However, its LB film showed a partially irreversible behavior, that is part of the frequency change due to
adsorption could not be recovered even after purging with pure
gas for an extended period. Examining the spectra of NMR and FTIR revealed fact that the irreversible portion of frequency change was due to ether groups in the linkage between side chains and the Pc unit. In order to remove the effect of such initial deactivation, on
quantification experiment, a freshly fabricated LB film was treated at a high concentration of
so that the ether sites were saturated. A pretreated LB film showed a reproducible performance for repeated uses. The
LB film showed a satisfactory sensing performance down to as low as 4 ppm. For the
LB film, the lower detection limit was found to be 35ppb of
. In order to make the experimental condition more realistic, the carrier gas, dry nitrogen, was replaced by air. It was observed that the presence of oxygen, a weak electron acceptor, reduced the sensitivity and thus increased the sensing limit to hundreds of ppb. Results of experiments with moisture added showed that the interference of moisture was quite severe.
Characteristics of Constructed SPR (Surface Plasmon Resonance) Sensor System for the Detection of Salmonella and hIgG Antigen-Antibody Reaction.
Um, N.S. ; Koh, K.N. ; Hahm, S.H. ; Kim, J.H. ; Lee, S.H. ; Kang, S.W. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 263~270
Surface Plasmon Resonance (SPR) sensor system, has rapid response and high sensitivity, can be applicable for detecting reaction times of many biospecific interactions. A SPR sensor system was constructed to detect the antigen-antibody reactions of salmonella and hIgG (human immunoglobulin G). Sensor chips made of gold thin film were used for detecting biological bindings of antigen and antibody reactions. The antigen and antibody reactions for salmonella and hIgG were carried out with various time intervals to observed characteristics of these reactions using SPR sensor system. The resonance angle shift changes were clearly observed at the time of salmonella or hIgG antibody injection into sample cell since each antibody was self-assembled on gold chip surface of the sensor. It was found that the antibodies of salmonella and hIgG reacted with its sensor chip surface in 10 minutes and 60 minutes respectively. And the antigens of both salmonella and hIgG were bound to its antibody within 1 minute.
Characteristics Improvement of a FET-Type Glucose Sensor and Its Application to a Glucose Meter
Lee, C.H. ; Choi, S.B. ; Lee, Y.C. ; Seo, H.I. ; Sohn, B.K. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 271~278
A ISFET-based glucose sensor has inherent problems such as low sensitivity, drift effect and long response time. For that reason, a amperometric actuation technique was introduce to make a highly sensitivity of the ISFET glucose sensor with a Pt actuator, which electrolyzes
, one of the by a by-products of the oxidation reaction of glucose. Moreover, a potential-step measurement method detecting response by only the electrolysis of
was developed for eliminating a drift problem. The operation characteristics of ISFET-based glucose sensor was improved by using the amperometric actuation and a measurement techniques. The fabricated ISFET glucose sensor is shown good operation such as characteristics(30mM PBS, about 26mV/decade) and linearity. A portable glucose meter with a highly resolution by using the fabricated ISFET-based glucose sensor with Pt actuation was developed and its characteristics investigated.
The Construction of the SPR (Surface Plasmon Resonance) Sucrose Sensor
Um, N.S. ; Lee, S.M. ; Hahm, S.H. ; Koh, K.N. ; Lee, S.H. ; Kang, S.W. ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 279~284
A surface plasmon resonance (SPR) sensor system for the determination of sucrose concentration was constructed with a gold thin film sensing chip. The properties of gold thin film are critical factors in exciting surface plasmon resonance phenomena. Therefore in the present paper, the fabrication conditions of gold thin film were investigated to optimize the SPR phenomena. The optimum thickness was obtained as
resonance angle and good surface roughness limitation. about
. The linear resonance angle shifts and rapid response were observed from the sucrose concentrations ranged from 0 to 40wt%.
A Study on the Application of Ni-Ti Shape Memory Alloy Wire Embedded in Composite Beam as a Sensor.
Lee, Chang-Ho ; Lee, Jung-Ju ; Huh, Jeung-Soo ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 285~292
Shape Memory Alloy(SMA) has been used in many engineering fields because of its good characteristics of actuator. For example, SMA wire can be embedded easily in the polymer composite laminate and then be used as actuator for structural control. Since the strain have a significant influence on the electrical resistance of SMA wire, It is a possible to use the SMA wire as a sensor of such physical quantities. In this study, the possibility for the application of Ni-Ti SMA wire as a sensor embedded within a composite laminate is investigated.
A Study on the Improvement of Voltage Measuring Method of 22.9 kV-y Distribution Lines
Kil, Gyung-Suk ; Song, Jae-Yong ;
Journal of Sensor Science and Technology , volume 7, issue 4, 1998, Pages 293~299
An objective of this study is to develop a voltage measuring device that uses a gas-filled switch (GS) on 22.9 kV-y extra-high voltage distribution lines. The voltage measuring device proposed in this paper is a kind of capacitive divider which consists of a detecting electrode attached outside of the bushing of GS, an impedance matching circuit, and a voltage buffer. It can be easily installed in an established GS without changing the structure. For the calibration and application investigations, the voltage measuring device was set up in the 25.8 kV 400 A GS, and a step pulse generator having 5 ns rise time is used. As a result, it was found that the frequency bandwidth of the voltage measuring device ranges from 1.35 Hz to about 13 MHz. The error of voltage dividing ratio which is evaluated by the commercial frequency voltage of 60 Hz was less than 0.2%. In addition, voltage dividing ratio in the commercial frequency voltage and in a non-oscillating impulse voltage were compared, and their deviation were less than 0.7%.