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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of Sensor Science and Technology
Journal Basic Information
Journal DOI :
The Korean Sensors Society
Editor in Chief :
Volume & Issues
Volume 9, Issue 6 - Nov 2000
Volume 9, Issue 5 - Sep 2000
Volume 9, Issue 4 - Jul 2000
Volume 9, Issue 3 - May 2000
Volume 9, Issue 2 - Mar 2000
Volume 9, Issue 1 - Jan 2000
Selecting the target year
Analysis of Temperature Characteristics on Accelerometer using SOI Structure
Son, Mi-Jung ; Seo, Hee-Don ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 1~8
One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than
and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after
. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around
at sensing resistor. The simulated
of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.
Dielectric characteristics with poling of P(VDF/TrFE) films for pyroelectric infrared sensor
Kwon, Sung-Yeol ; Kim, Young-Woo ; Baem, Seung-Choon ; Park, Sung-Kun ; Kim, Ki-Wan ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 9~14
Dielectric characteristics of P(VDF/TrFE) film manufactured using spin coating technique have been investigated. To improve the crystallinity and quality of film, the film was three step annealed. Simple etching process and conditions for P(VDF/TrFE) film were established using top electrode as a mask. Poling is performed by several steps.
thick P(VDF/TrFE) films were obtained with conditions such that the solution of 10 wt% concentration was spun at 3000rpm for 30 seconds. Before poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 13.5 and 0.042, respectively. After poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 11.5 and 0.037, respectively.
Fiber optic temperature sensor using evanescent field coupling of the thermo-optic polymer planar waveguide
Kim, Si-Hong ; Jung, Woong-Gyu ; Kim, Kwang-Tack ; Song, Jae-Won ; Kang, Shin-Won ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 15~21
Optical fiber temperature sensor, using resonance wavelength shifting of single mode fiber-to-planar waveguide coupler by heat, was fabricated. Thermo-optic polymers, have large change of refractive index due to heat, were used for planar waveguide. The device fabrication procedure including fiber polishing steps was illustrated and the device structure with independent polarization was demonstrated experimentally. The resonance wavelength difference of fabricated device was less than 2nm. The resonance wavelength shifting owing to temperature variation, from room temperature(
, was showed
High Sensitive Strain Detection of FeCoSiB Amorphous Films
Shin, Kwang-Ho ; Arai, Ken-Ichi ; SaGong, Geon ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 22~27
Amorphous FeCoSiB films with high saturation magnetostriction and excellent soft magnetic properties have been studied to evaluate their strain sensitivity. Films were subjected to a strain by bending of their substrates, which caused a change in the magnetic anisotropy of films via magnetoelastic coupling. Films were exhibited a figure of merit
(change in film permeability
per unit strain
, which is comparable with that of amorphous ribbons. To make a study of application of magnetostrictive films as strain sensor elements, we have prepared a micro-patterned film by means of the photolithography and ion milling processes. Impedance change in the patterned films, when strain was applied, was measured over the frequency range from 1 MHz to 1 GHz. Reflecting a large value of figure of merit F, a variation of 46% impedance of films was shown at 100 MHz frequency when a strain of
Analysis of the Characteristics of Polyurethane Synthesis Using Quartz Crystal Analyzer
Cho, Hong-Sik ; Park, Jin-Young ; Han, Dae-Sang ; Park, Ji-Sun ; Lee, Hang-Ja ; Kim, Kwang ; Chang, Sang-Mok ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 28~35
In this study, we investigated the characteristics of polyurethane synthesis by simultaneously measuring resonant frequency and resonant resistance with a quartz crystal analyzer. The rapid decrease of resonant frequency was appeared because automatic catalytic reaction was caused by the polyurethane formed in initial stage of polyurethane synthesis. In prepolymer(PP) synthesis, the resonant frequency was slowly stabilized after a rapid decrease at a certain point of time. But in segmented polyurethane synthesis in which chain-extender was involved, the resonant frequency increased again after a rapid decrease at a certain point of time. It was considered that this tendency took place because the chain-extender, 1,4-butandiol, caused a soft segment to change to a hard segment. The resonant resistance was used in the analysis of mechanism. From the results, the characteristics of polyurethane synthesis could be analyzed on-line using a quartz crystal analyzer, and the synthesis mechanism could also be interpreted.
Fabrication and Characteristics of ZnO-based thin film sensors with high selectivity for TMA gas
Park, Sung-Hyun ; Choi, Woo-Chang ; Kim, Sung-Woo ; Ryu, Jee-Youl ; Choi, Hyek-Hwan ; Lee, Myong-Kyo ; Kwon, Tae-Ha ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 36~43
In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with
catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at
for 1 hour. The TMA selectivity of sensors was defined by the magnitude(
) of TMA sensitivity relative to DMA and sensitivity ammonia(
) sensitivity, respectively. The
sensor showed high
of 5.9 and
of 26 to 160 ppm at the working temperature of
Development of a Sensor Fusion System for Visible Ray and Infrared
Kim, Dae-Won ; Kim, Mo-Gon ; Nam, Dong-Hwan ; Jung, Soon-Ki ; Lim, Soon-Jae ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 44~50
Every object emits some energy from its surface. The emission energy forms surface heat distribution which we can capture by using an infrared thermal imager. The infrared thermal image may include valuable information regarding to the subsurface anomaly of the object. Since a thermal image reflects surface clutter and subsurface anomaly, we have difficulty in extracting the information on the subsurface anomaly only with thermal images taken under a wavelength. Thus, we use visible wavelength images of the object surface to remove exterior clutter. We, therefore in this paper, visualize the infrared image for overlaying it with a visible wavelength image. First, we make an interpolated image from two ordinary images taken from both sides of an infrared sensor. Next, we overlay the intermediate image with an infrared image taken from the infrared camera. The technique suggested in this paper can be utilized for analyzing the infrared images on non-destructive inspection against disaster and for safety.
Study on Electrically Powered Left Ventricular Circulation Assist Device
Kim, Myoung-Nam ; Lee, Jeong-Woo ; Chang, Bong-Hyun ; Cho, Jin-Ho ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 51~60
This paper outlines the development of a non-pulsatile axial flow type blood pump control system. By utilizing blood pressure and heart rate, this system can assist the left ventricle in controlling blood pressure and blood volume. The system is comprised of a blood pump, signal sensor, signal interface, and signal-processing component. A control algorithm is also proposed which can control non-pulsatile, continuous blood flow in the human circulatory system. To facilitate the control required for non-pulsatile blood pump in a physiological system, an experimental control rule was developed utilizing ECG and blood pressure data, both of which are easily detectable variables in the body. The system was then tested using a mock-up circulation system and we found that it is possible that this systems could be temporarily used in clinic.
Vision Sensor System for Abnormal Region Detection under Outdoor Environment
Seo, Won-Chan ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 61~69
In this paper, an algorithm was developed to construct a vision sensor system that can detect abnormal region under ever changing outdoor environment. The algorithm was implemented on parallel network system consist of multi-processors according as it's properties to enlarge it's features. From experiments using real scenes, the algorithm was adaptive to ever changing outdoor environmental conditions and it was confirmed that the system is robust and effective.
A Study on the Fabrication of the Solar Cells using the Recycled Silicon Wafers
Choi, Song-Ho ; Jeong, Kwang-Jin ; Koo, Kyoung-Wan ; Cho, Tong-Yul ; Chun, Hui-Gon ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 70~75
The recycled single crystal silicon wafers have been fabricated into solar cells. It can be a solution for the high cost in materials for solar cells and recycling of materials. So, p-type (100) single crystal silicon wafers with high resistivity of
and the thickness of
were used for the fabrication of solar cells. Optimistic conditions of formation of back surface field, surface texturing and anti-reflection coating were studied for getting high efficiency. In addition, thickness variation of solar cell was also studied for increase of efficiency. As a result, the solar cell with efficiency of 10% with a curve fill factor of 0.53 was fabricated with the wafers which have the area of
and thickness of
. According to above results, recycling possibility of wasted wafers to single crystal silicon solar cells was confirmed.
Fabrication of SMD Type PTC Thermistor with Multilayer Structure
Kim, Yong-Hyuk ; Lee, Duck-Cuool ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 76~82
PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.
The characteristics of
thin films deposited on ITO glass for TFELD insulating layer
Kim, Jeong-Hwan ; Bae, Seung-Choon ; Park, Sung-Kun ; Kwon, Sung-Ryul ; Choi, Byung-Jin ; Nam, Gi-Hong ; Kim, Ki-Wan ;
Journal of Sensor Science and Technology , volume 9, issue 1, 2000, Pages 83~89
BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method.
mixing ratio was 10%, substrate temperature was changed from R.T. to
, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of
, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below
at 5\;MV/cm applied electric field, and transmittance was over 82% at visible range.