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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 11, Issue 12 - Dec 1998
Volume 11, Issue 11 - Nov 1998
Volume 11, Issue 10 - Oct 1998
Volume 11, Issue 9 - Sep 1998
Volume 11, Issue 8 - Aug 1998
Volume 11, Issue 7 - Jul 1998
Volume 11, Issue 6 - Jun 1998
Volume 11, Issue 5 - May 1998
Volume 11, Issue 4 - Apr 1998
Volume 11, Issue 3 - Mar 1998
Volume 11, Issue 2 - Feb 1998
Volume 11, Issue 1 - Jan 1998
Selecting the target year
The Surface Effect of Polyimide Thin Film by Vapor Deposition Polymerization Method With Plasma Treatment
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 340~346
In this study, we intended to investigate aging effect of polyimide prepared by VDPD(vapor deposition polymerized method). The prepared polymide was treated by the oxygen and argon gas plasma. And we evaluated the polyimide treated by plasma from contact angle, surface leakage current, FT-IR and SEM. We know that the structure of polyimide at surface are changed to amide structure by plasma treating. It seems that strong energy of plasma causes breaking the molecular chin of the polyimide. And surface roughness increases with plasma treating time increased and sequentially the wettability and leakage current increases.
The Optimization of SONOSFET SPICE Parameters for NVSM Circuit Design
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 347~352
In this paper, the extraction and optimization of SPICE parameters on SONOSFET for NVSM circuit design were discussed. SONOSFET devices with different channel widths and lengths were fabricated using conventional 1.2 um n-well CMOS process. And, electric properties for dc parameters and capacitance parameters were measured on wafer. SPICE parameters for the SONOSFET were extracted from the UC Berkeley level 3 model for the MOSFET. And, local optimization of Ids-Vgs curves has carried out in the bias region of subthreshold, linear, saturation respectively. Finally, the extracted SPICE parameters were optimized globally by comparing drain current (Ids), output conductance(gds), transconductance(gm) curves with theoretical curves in whole region of bias conditions. It is shown that the conventional model for the MOSFET can be applied to the SONOSFET modeling except sidewalk effect.
Fracture Toughness of IC Molding Compound Materials(II)
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 353~357
Cracking problem of Epoxy Molding Compound(EMC) is critical for the reliability of the plastic package during temperature cycling and IR-reflow condition. Fracture toughness of EMC, which is defined as the resistance of EMC to the crack propagation, is a useful factor in ht estimation of EMC against package crack. Thus, development of EMC having high fracture toughness at a given loading condition would be important for confirming the integrity of package. In this study, toughness of several EMC was measured by varying the test conditions such as temperature, loading speeds, and weight percent of filler in order to quantify the variation of toughness of EMC under various applicable conditions. It was found from the experiments that toughness of all EMC has following trends, i.e., it rapidly decreases over the glass transition temperature, remains almost same or little decreases below
. It decreases with the growth of cross head speed in EMC and the weight percent of filler as the degree of brittleness of EMC increases with the amount of filler content.
A Study on High Energy Ion Implantation for Retrograde Well Formation
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 358~364
Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well(
),after annealing are similar trends to those of conventional ones(
), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to
as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between
. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.
A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT s Recessed by ECR Plasma and Wet Etching
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 365~370
We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the
solution, a nonvolatile AlF
layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage(
etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using
dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2
and width of 100
, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA
and 2 V souce-drain voltage.
The Spectroscopic Ellipsometry Application to the Diamond Thin Film Growth Using Carbon Monoxide(CO) as a Carbon Source
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 371~377
The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature,
gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using
are determined and it is shown that
C in the diamond film is greatly reduced.
Microstructure and Additive Effect of the Piezoelectric ceramics PZT prepared by Molten Salt Synthesis Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 378~383
Microstructure and additive effect of Lead Zirconate-Titanate(PZT) ceramics prepared by molten salt synthesis method with additives
and MnO were investigated.The grain PZT ceramics ws decreased with the increase
while increased with the increase
addition. The relative resistivity of PZT ceramics was increased with the increase
addition, while decreased with the increase
addition. And the dielectric and the piezoelectric constant of PZT ceramics showed 2,100 and 342pC/N at
addition of 0.75 mol%, respectively.
The Effect of Carbonate Particle Size Distributions on the Thickness Change of MCFC Electrolyte Matrix
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 384~393
A mixed powder of electrolyte and matrix support materials with a proper proportion was used for the fabrication of an electrolyte matrix sheet. The purpose of this study is to reduce the large change in MCFC cell thickness occurring in the initial start-up period when separate sheets of electrolyte and support are used. A focus was put on how small the carbonate particles could be made. The particle size of the carbonate powder was controlled by ball milling and the distribution was measured using a particle size analyser. The thickness change was reduced to 20% by this approach, which could be compared to 27% observed in a conventional cell. The thickness changes of electrolyte matrix have linear relation sizes of carbonate powders.
High Power Characteristics of
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 394~399
High power characteristics with vibration velocity were studied in
(PYW-PZT) ceramics by using the constant current method. Young s modulus
and mechanical quality factor
are a function of the square of effective vibration velocity
. The nonlinear proportional constants of the above functions indicate the degree of stability under the vibration level change. The stability of PYW-PZT ceramics estimated by these constants coincides with the results obtained through the heat generation. It was found that
was markedly decreased with increasing the vibration velocity, accompanying a lot of heat generation. The vibration hysteresis and dielectric loss according to the vibration velocity was reduced by doping
to the ceramics. On the contrary, these losses was increased by doping
BPM Analysis and Preparation of Low Loss
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 400~406
We investigated the preparation and guided-mode properties of
waveguides which were fabricated by Ti in-diffusion. The diffusion method to reduce the Li out-diffusion was proposed. The optical guided-mode and propagation loss based on butt-coupling pigtailed with PMF-input were measured. How to improve the polishing grade of waveguide endfaces is newly proposed in this paper. To show the mode propagations, the BPM simulations of channel waveguide are described.
Design of Phased Array WDM Filter with Flat Passband Characteristics
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 407~412
In this paper, we design PHASAR(Phased Array) WDM(Wavelength Dvision Division Multi- and Demultiplexing) filters and evaluate their performance. The PHASAR WDM filter is designed to have flat-passband characteristics by inserting the multimode waveguides between input waveguides and a first star coupler. BPM simulation results show that the excess loss is smaller than 6.5 dB, the crosstalk is less than -22 dB and the 1 dB passband is about 50 GHz. The effect of the path difference error is also investigated.
Frequency Dependance of Inductance of FeCoB Amorphous Magnetic Films
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 413~417
In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films.
was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at
, 30min and 1hr at
, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was
. In the case 30min at 40
the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at
and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at
Preparation of Co-Cr Thin Films by Facing Targets Sputtering
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 11, issue 5, 1998, Pages 418~422
The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure(
, 0.1~10mTorr) by using FTS apparatus at temperature of
, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.