The I-V characteristics of the n-channel offset gated poly-Si TFT’s have been analyzed as a function of offset length. It has been found that the offset regions behave as a series resistance and reduce lateral electric field in the drain depletion region. The on current slightly decreased by the series resistance of the offset region. The off current remarkably reduced from to ~ A at = 5 V and = -20 V and almost constant independent of gate and drain voltage sue to the reduction of the electric field in the drain depletion region. The on/off current ratio of the offset gated TFT’s is larger than that of a conventional devices and it becomes larger as the drain voltage increased.

The band structures for grown in the (001), (110), and (111) directions are calculated by taking into account the strain effects. The result shows that /Ge(001) has the widest direct band gap(0.73 eV>>0 eV, 0.05(001) is expected to be the most promising for the development of ultra high speed optoelectronic device because of the small effective masses for electrons and holes.

The effect of BaO addition in system was studied through investigation of the sinterability, microstructure and electrical conductivity. With the 0.6wt% BaO addition, we could obtain high dense electrolyte having bulk density of 6.78g/㎤ and apparent porosity of 0.37%, the bulk density of which was increased more about 10% than that of the GYC. Thermal expansion coefficient (15.4~15.7×/℃) of BaO added specimens was similar to that of GYC(15.3×/℃). Electrical conductivity measured at 1073K showed 0.034S/㎝ of the maximum value with 0.6wt% BaO add specimen, which was 3 times higher than that of the GYC(0.010S/㎝). And the activation energy for the electrical conduction was 0.37Ev and lower than 0.60eV for GYC.

Aging effect of $^{60}CO τ-ray irradiation on fire retardancy, mechanical and electrical properties of chlorosulfonated polyethylene(CSPE) containing various fire retardant additives such as PbO, ,, and were investigated. The fire retardancy improved when the fire retardants are added to the CSPE, the extent of which decreases with an increase of irradiation dosage. It was also found that both mechanical elongation and electrical insulation properties decrease with an increase of irradiation dosage. However the additives such as , , and improved high frequency dielectric properties. was found to be the most effective fire retardant in fire retardation of CSPE under $^{60}Co τ-ray irradiation environment.

Thermal properties for typical stack-type and newly proposed planar-type micro-gas sensors were studied. The thermal analyses for the proposed planar structure including temperature distribution over the sensing layer and power consumption of the heater were carried using finite element method by computer simulation and well compared with those of typical stack-type micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of a actual device to investigate the acceptability of the computer simulation for micro gas sensor.

Metal-insulator-semiconductor structures have been fabricated by sandwiching L-α-DLPC Langmuir-Blodgett(LB) films between metals like a silver, aluminium and n-type silicon wafer. The structure, electrode, electrode area, bias current, and dielectric properties of this MIS capacitor were investigated and the real part of the relative permittivity of LB layers is found by measuring the capacitance of a metal/LB film/semiconductor sandwitch structure. The dielectric constant either be calculated parallel to the substrate surface(in the film plane) or perpendicular to it(through-plan) and dielectric constant of the MIS capacitor(perpendicular structure) shows very high value with Ag electrode and small electrode area.

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. DMPC molecules have one phosphatidylcholine head group and two long alkyl groups with carbonyl group. Displacement currents generated during the compression of monolayers of DMPC on the surface of water were investigated. The phase transition from the gaseous phase to the gaseous-fluid phase which accompanies the polar ordering of lipid molecules was detected by the technique in the range of immeasurable low surface pressure, and the molecular area which gives the onset of the transition was determined for various lipid monolayers. The vertical component of the dipole moment of lipid membranes was determined from the charge flowing through the circuit, and it was also determined by a curvefitting method from Maxwell displacement currents generated in the fluid phase.

Reactive radio frequency (RF) magnetron sputter has been used to deposit AIN thin film on a crystalline Si substrate. Preferred orientation of AIN thin film changed from (100) plane to (002) plane at lower operating pressure. Also, it has been shown that low fraction of nitrogen partial pressure should be maintained to deposit a thin film with a high degree of (002) preferred orientation within a temperature range between room temperature and 700℃. AES in-depth measurements showed that impurities and stoichiometry of aluminum and nitrogen elements were affected by operating pressure. The current-volt-age(Ⅰ-Ⅴ) measurement measured leakage current and dielectric strength. At an applied electric field of 1[MV/㎝], leakage current of AIN thin film was measured at about 3.0×~7.0×[A/㎠]. Relative resistivity at 0.5 of fraction of nitrogen patial pressure was about 1.4×[Ωㆍ㎝]. As substrate temperature increased up to 500[℃] showed decrease of dielectric strength.

Ca-modified thin films (x=0, 0.1, 0.2, 0.,3 ㏖) were fabricated by sol-gel process in order to improve the pyroelectric characteristics of [PT] thin films. We obtained the crack-free thin films, and investigated the electrical and pyroelectric properties of the samples. As a result, the physical properties of PCT(10) thin films are as follows Therefore PCT(10) thin films will be suitable for applications such as pyroelectric infrared detector.

(BST) thin films were fabricated with different substrate temperature and postannealing time by pulsed laser deposition(PLD). BST films on were of polycrystalline perovskite structure without preferred orientation. As substrate temperature increased, BST peak intensities in XRD increased up to 750℃. At 800℃, however, the intensities decreased because of the appearance of another pyrochlore which is due to Pt and Ti in substrate. BST thin films post-annealed in for 20 min, pyrochlore peaks became smaller and BST peaks became larger. BST thin films deposited at 750℃ and post-annealed for 20 min had dielectric properties of , dielectric loss=~0.01, and showed a paraelectric polarization versus electric-field (P-E) hysteresis relationship.

To obtain highly pure red emission, we prepared Organic light-emitting-diode(OLEDs) with a fluorescent dye-doped emission layer(ALq3) by vapor deposition method. The OLED has a double-layer structure. The hole transporting layer is a tripheny1 diamine(TPD), and the emission layer consists of Aluminum quinoline(Alq3) doped with squarylium(Sq) and dicyanomethylene(DCM) dye. We discussed the electroluminescence(EL) and electrical properties with doping concentration. EL spectra of the specimens with two dyes doped emission layers do not show the peak due to DCM(560㎜) and Alq3(520㎜), and only the EL spectra from Sq(670㎜) can be observed at Sq(10㏖%)-doped Alq3 LED. Because DCM molecular and Sq-doped specimen are 2~3 times higher than those of only Sq-doped specimen. The energy transfer process from Alq3 to Sq through DCM is thought to exit in the Sq and DCM doped Alq3 LED.

Poly(9,9-dihexadecylfluorene) has been prepared via an oxidative polymerization using ferric chloride and its electroluminescent(EL) properties have been investigated. The EL emission peak wavelength of poly(9,9-dihexadecylfluorene) is 540㎜ with green visible light. The light emission intensity increase linearly with increasing injected current. The spectrum shows the peak intensity at 540㎜ corresponding to the photon energy of 2.30Ev. On the other hand, the band gap of the poly(9,9-dihexadecylfluorene) has been estimated to be 2.98EV from the absorption spectrum, indicating that the emission is not only a single band-edge emission. It is not clear at the present stage of the experimental whether the recombination of carriers occurred through polaronic, defect or impurity states.

An active-matrix liquid crystal display (LCD) using thin film transistors (TFTs) has been widely recognized as having potential for high-quality color flat-panel displays. In this study, Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed. The set of models which is adopted from very large scale integration (VLSI) interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

In this study, we synthesised a photo-alignment material of PM4Ch(poly(4-methacrylylloxy chalcone)). The electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-liquid crystal display (LCD) with linearly polarized ultraviolet (UV) light irradiation on PM4Ch surface were investigated. We had the uniform alignment of NLC with polarized UV light irradiation on PM4Ch surface was achieved. The reduction DC voltage of photo-aligned TN-LCD on PM4Ch surfaces were obtained. Also, the fast response time of photo-aligned TN-LCD on PM4Ch surfaces was achieved. The reduction DC voltage of photo-aligned TN-LCD decrease with increasing the UV light irradiation time on PM4Ch surface.

This paper deals with a novel structure of poly-Si solar cell fro terrestrial applications of the low cost cell. A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, , n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about 10 ㎛ as well as randomly textured surface. RF magnetron sputter grown ITO films showed a resistivity less than Ω -㎝ and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 ㎽/㎠.

In this paper, by using the electrophoresis, preparation of YBCO superconducting wire deposited on metal Ag base wire was studied with its properties. YBCO powder could be prepared by solid state reactions with calcining and sintering processes. Superconducting wire prepared on metal Ag wire used as cathode of deposition base could be also fabricated in the YBCO/acetone-dispersed solution to obtain several tens of ㎛ thick films. And then it could be bused as superconducting wire for measurement after calcinations, sintering and oxygen absorption process. In the process of film deposition, a catalyst add into the suspension solution was very useful for preparing thick film of YBCO, and of additive material was also necessary for preparing crack-free wire of YBCO superconductor. As a result, YBCO superconducting wire added 2~3wt.% of with catalyst, had better deposition condition for uniform and dense YBCO wires, and critical current density, Jc was calculated at the value of 1,458 A/㎠ (more than A/㎠, 77 K, 0 T) OF 30 ㎛ thick sample by 4 point prove method.

A well oriented $Bi_2Sr_2CaCu_2O_x (Bi2212) superconductor thick films were fabricated by screen printing with a Cu-fee Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820~880℃ for several minute in air. During the heat-treatment, the printed layer partially melted by liquid reaction between the Cu-free precursor and CuO of the oxidized copper plate. In the partially melting state, the solid phases were identified Bi-free phase and Cu-free phase, and the composition of the liquid was around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1 by using EPMA. The Bi2212 superconducting phase is formed amount of Bi element in the composition of precursor powder, the critical temperature() of the fabricated Bi2212 thick film increased to 79 K.

We have fabricated and tested a Bi-based high temperature superconducting current lead. Multi-layer current lead was made by stacking of Ag sheathed Bi-2223 mono-filament wires. Ag sheathed Bi-2223 mono-filament wires of critical current =8.4 A at 77 k under self-field condition were fabricated using the power-in-tube (PIT) method. The critical current of the 10-layer current lead, is about 68 A at 77 K. At temperatures below the critical temperature, main contribution to total resistance resulted from contact resistance between copper and HTSC leads. The stability of the lead during thermal cycles was investigated in the range of 77~300 k. Also ac transport loss in the lead wad measured at 77 K and 60㎐ using a transport method.

In this paper, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of which was fabricated by a single roll method. The sample was 12 ㎛ thick, 2.5 ㎜ wide and 5 ㎝ long. In order to improve magnetic properties of the sample, we carried out annealing in a magnetic field followed by a post annealing without magnetic field. Experimental results showed that the ribbon had large Barkhausen jump even in weak magnetic field below 0.5 Oe. And, we confirmed that the sample could be used as a magnetic sensor material.

Ferrite/rubber composite specimens have prepared by molding and curing the mixture of matrix silicon rubber and three kinds of filler particle Mn-Zn ferrite/Ni-Zn ferrite/ ferroxplanna which are synthesized by the coprecipitation method. The mixing ratio of three kinds of ferrite filler particle was changed to adjust the material constant of composite microwave absorbers. Material constants of composite specimens were calculated from measured variables(s-parameter) over the frequency range from 1 to 12㎓ by means of a Network Analyzer(HP8722D) with a co-axial type air line. It was able to predict the matching condition (frequency and thickness) of some kinds of composite specimens from the impedance matching map. On S-9 and S-10 composite specimens, the band width was more broaden and the reflection loss was larger in comparison with only one ferrite/rubber composite specimens, We were able to make composite microwave absorbers that the reflection loss was more than 20[㏈] in the frequency range form 2 to 4㎓ [S-band] and from 4 to 8㎓ [C-band] by changing the mixing ratio of three kinds of ferrite filler particle

Superconducting (YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. To apply the film on power transmission application, we have studied the properties of which affected YBCO growth. has been deposited with varying both deposit temperature 700℃ to 780℃ and oxygen pressure 0 mTorr to 100 mTorr. From this experiment, we have observed that each domination of (111) and (200) of affected c-axis oriented growth of YBCO. (200) direction of results in better quality of YBCO than (111) direction and such (200) direction can be partially achieved at specific deposition temperature. The YBCO film deposited on (200) orientation dominated shows 89.45% decrease in YBCO Ⅰ(200)/Ⅰ(006) compared with YBCO on (111) orientation of .

The three constants value of PID measuring derivative equation with setting the constants value among P(500~9000), I(60~9000), D(000~9000) are followed as the matter of to be known to practice with control system designed and developed the experiment that the PV approaches to the aim value of the SV. The first, a standard program is designed to study the principle implementation of PID module. The second, it is known that the PID module should be used together with A/D, D/A module. The third, in Kp, Ti, Td, due to the setting value of three constants in equation MVp, MVi, MVd, is analyzed a varied rate of E through the experiment of developing system and PMU, the process value is approached to the aim of value, 1) If Kp is high, PV converges fast to the SV, while if Kp is small, PV converges slowly to the SV. 2) If Ki is low, PV approaches fast to the SV, while if Ti is high, PV approaches slowly to the SV. 3) If Td is high, the range of E is constrained strictly not to increase, but to the value of experimental result of convention. With upper experiment, general using of PID module should be improved the temperature error, this problem is predicted previously that should be faster than 0.1sec in an operation time of conventional manipulation value.

A new band-pass filter (BPF) prepared by dielectric monoblock and its design techniques is presented, which has the benefits of low cost and small size because additional coupling elements are not needed. Monoblock dielectric BPF with an attenuation pole at below the passband has been realized without mechanical tuning. The modeling of the three-pole dielectric monoblock BPF has been carried out by CAD. The equivalent circuit of the BPF was established by transmission lines and lumped capacitors. The transmission line characteristic impedances were computed using 2-D FEM. The BPF for PCS has been designed to have a 60 ㎒ pass-bandwidth with center frequency of 1960 ㎒ and an attenuation pole below the passband using a commercial 3-D structure simulations. The error between the measured and simulated center frequency is 0.2%