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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 12, Issue 1 - Jan 1999
Volume 12, Issue 9 - 00 1999
Volume 12, Issue 8 - 00 1999
Volume 12, Issue 7 - 00 1999
Volume 12, Issue 6 - 00 1999
Volume 12, Issue 5 - 00 1999
Volume 12, Issue 3 - 00 1999
Volume 12, Issue 2 - 00 1999
Volume 12, Issue 12 - 00 1999
Volume 12, Issue 11 - 00 1999
Volume 12, Issue 10 - 00 1999
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A Basic Study on Partial Discharge Detection using Oscillating Wave Voltage
Kim, Jeong Tae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 103~103
This paper deals with the basic study of OW-PD (Oscillating Wave-Partial Discharge) measurement method which is expected to have excellent applicability on-site, its small size and low cost. For the purpose, OW-PD measurement system has been composed with the OW voltage generating equipment, PD detecting sensor and PD detecting window circuit. And OW-PD measurements have been carried out for the needle-plane electrode and the power cable sample having electrical tree. From the results,it is confirmed that the OW-PD measurement system can detect partial discharges and the PD defecting window circuit can be operated very well. Therefore, it is concluded that the composed OW-PD measurement system can be useful as a PD test method for an after laying test and/or a diagnostic test of an underground power cable system.
A Study on PMD(Pre-Metal Dielectric) Structure to Prevent Device Degradation Induced by CMP Process
Seo, Yong Jin ; Kim, Sang Yong ; Kim, Tae Hyeong ; Kim, Chang Il ; Lee, U Seon ; Jang, Ui Gu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 111~111
It is very important to select superior Inter-layer PMD(Pre Metal Dielectric) materials which can act as a penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with various PMD-1 layers, such as LP-TEOS SR-Oxide, PE-Oxynitride, PE-Nitride, and PE-TEOS films. The oxynitride and nitride deposited using plasma were greatly degraded the device after hot carrier test compared with silicon oxide. Consequently, silicon oxide turned out to be the better PMD-1 material than PE-oxynitride or PE-nitride. Also, LP-TEOS film was the best PMD-1 material among the silicon oxides.
Development and Electrical Properties of Glass-Ceramic Dielectrics for Multilayer Capacitors with Silver Internal Electrode
Lee, Heon Su ; Son, Myeong Mo ; Park, Hui Chan ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 118~118
Glass-ceramic dielectrics were prepared for the purpose of multilayer capacitors with silver internal electrode. The components of the glass-ceramics were composed of SiO₂, Al₂0₃, BaO, SrO, TiO₂, and B₂O₃. Their crystallization behaviors have been investigated as a function of temperature, particle size and composition in relation to dielectric properties such as dielectric constant and loss factor. Crystallization temperature was determined by differential thermal analysis(DTA) , Crystalline phases formed by heat treatment of glasses were identified by powder X-ray diffraction(XRD) analysis. As a result, (Ba,Sr)
was developed as a major crystalline phase in the temperature range of 850-9OO'C.The dielectric constants of trio glass-ceramics were 8 to 13, and Q factors were similar with those of the conventional dielectrics.
Effects of Ba substitution on the electric properties of PMN-PZT Ceramics
Kim, Man Seong ; Lee, Su Ho ; Ryu, Ju Hyeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 124~124
PMN-PZT ceramics were fabricated with the substitution of Ba in Pb site in the ranges from 0 to 8 mol% and their electrical and, dielectrical properties were investigated. As the amount of Ba increased, the tetragonality decreased, and the grain size increased up to 6 mol% Ba substitution and then decreased slightly. The
showed maximum values at 6 mol% Ba substitution. The dielectric constant linearly increased while
decreased with increasing Ba contents.
The Effect of Y₂O₃Addition on the Microstructur and Electrical Properties of Bi-Based ZnO Varistors
Nam, Chun U ; Park, Chun Hyeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 130~130
The microstructure and electrical properties of Bi-based ZnO varistors containing from 0.0 to 4.0mol% Y₂O₃ were investigated. With increasing Y₂O₃ content, the distribution of spinel phase decreased, where-as a Y-rich phase formed in the nodal point increased. As a result, this phase acted as a grain growth inhibitor which decreases the average grain size of range from 20.0 to 4.8um. As a Y₂O₃ content increases, the varistor voltage increased and the nonlinear exponent exhibited a tendency of decrease. AY₂O₃ content showing relatively good conduction characteristics was 1.0mol%, then the nonlinear exponent and the leakage current was 55.3, 0.66uA, respectively. Since the donor concentration decreased by Increasing Y2O3 content, Y₂O₃ showed a role of acceptor.
Effect of the Heat Treatment on the CdZnS/In Thin Film Using Vacuum Evaporated Indium Films
Lee, Jae Hyeong ; Lee, Ho Yeol ; Park, Yong Gwan ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 137~137
To improve the electrical conductivity of CdZns films by thermal diffusion, thin Indium films (10-4Onm thickness) were evaporated on the surface of chemical bath deposited CdZnS films. Also, effects of the thickness of indium films and the annealing temperature on structural and optical properties of CdZns films were investigated. The diffusion process was carried out by heating the sample in air at 150-550t for 20 minute. X-ray diffraction patterns of CdznS films indicate that the minimum thickness and annealing temperature for the formation of an In2O3 surface layer, which acts as a barrier preventing the out-diffusion of indium, are 20nm and 350'C, respectively In203 layers give the high optical transmit-tance due to their transparent properties. Also, this layer allows indium diffusion into the CdZnS films, resulting in an indium-doped CdZnS film. The resistivity decreases as the thickness of induim film increases and the lowest value of 0.3 l-cm is attained for CdZnS films annealed at 450'C with 40nm indium layer.
Voltage-Current Characteristics of Thin Films of SiO/TiN Deposited Tin
Song, Chan Il ; Kim, Chang Seok ; Jeong, Cheon Ok ; Kim, Byeong In ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 145~145
In this study, the evaporation of SiO layers with different thickness on Si wafer(n-100) Is conducted by using the RF sputtering method. Thin films are made with the structure of Si/SiO and Si/SiO/TiN by evaporating TIN which is used as a diffusion barrier of non-resistant superintegrated semiconductor circuit. The research is performed to increase the I-Y characteristics depending upon the SiO thickness and the reliability and reproducibility of the TiN thin film. It is shown that, since the TiN is diffused into SiO surface and fosters the potential barrier highly in the SiO/TiN thin film, the saturation voltage appears after the SiO thin film does. The thicker the SiO film becomes, the weaker the current variation does and the less leakage current the TiN deposited thin film has. The leakage current variation with a little slope is found in the negative voltage zone due to the effect of the trap state density near the electrode. The spiking which occurs when the film is too very thin can be reduced by adding TiN. The stability can be obtained due to no pervasion of Al into SiO. The experimental result matches the Ohm'slaw and satisfies the equation of current.
Electrical Properties of SBT Ferroelectric Thin Films Prepared by MOD
Cheon, Jae Il ; Kim, Jeong Seok ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 151~151
Crystallization, microstructure, and electrical properties were investigated as a function of annealingtemperature in SrBi2Ta209 thin films, which have high potential for ferroelectric random access memory, prepared by MOD(metal-organic deposition). With increasing annealing temperature from 600'C to 850'C, fluorite phase with very small grains was crystallized in the temperature range of 600'C to 650'C and then Bi-layered perovskite phase was crystallized and rod-like grains grew in very small equi-axed grain matrix above 700'C. The SrBi2Ta209 thin film annealed at 750'C had most desirable electrical properties, large dielectric constant(207), large remanent polarization (2Pr= 11.49uC/cm2), low leakage current density(1.4×10-8A/cm2 at 3V), and good fatigue characteristics up to 10-9 cycles. It was due to that theSrBi2Ta2O9 thin film annealed at 750'C had not only large rod-like grains but also dense microstructure resulted from co-existent small grains between the large rod-like grains.
Fabrication of a Porous α-Fe₂O₃Thin Film by PECVD(Plasma Enhanced Chemical Vapor Deposition) for Gas Sensor Application
Lee, Eun Tae ; Jang, Geon Ik ; Jeong, Yong Seon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 158~158
a-Fe203 thin films deposited on Al2O3 were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) process using
. α-Fe203 phase was quite stable in the temperature range from 80'C to 120'C. Microstructure of α-Fe2O3 thin film at RF power of 100w showed the porous island structure. As RF power increased above 100W, microstructure of α-Fe203 thin film was changed into the dense structure. As a result of BET measurement, non-polished substrate had the wider specific surface area than that of polished substrate. The optimum condition to obtain the porous structure of α-Fe203 thin film on non-polished substrate was substrate tempera-ture of 80~120'C, deposition rate of 160A/min and RF power of 100w.
Fabrication and Characteristics of Ferroelectric SBT/YBCO/LaAIO₃Hetero Thin Films by the PLD Method
Lee, Jae Hyeong ; Go, Jung Hyeok ; Gu, Sang Mo ; Mun, Byeong Mu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 165~165
heterostructure has been made epitaxially on LaAl03 (100) substrates rising aNd YAG pulsed laser deposition(PLD) technique. The deposition temperature varied from 600'C to 900'C Subsequently, the sample was annealed at 400'C for 30min. at 02 atmosphere. As the results of XRD patterns and rocking curves, multilayer SBT/YBCO thin films on the LaA103 substrate showed highly c-axis orientation. The lattice mismatch between SBT and YBCO was found to be 1.2~l.3%The electrical properties of these SBT thin films, such as remanent polarization(Pr) , coercive field (Ec)and frequency response, were studied. At optimum condition, it showed the values of
= 1.1μC/㎠ and
=90kV/cm, and the frequency dependence of the sample was relatively small in the range of100Hz~ 10kHz. The ferroelectric properties of
thin films were very attractive for non-volatile memory application.
Effects of NLCs on polar anchoring energy and pretilt angle for three kinds of the rubbed polymer layers
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 170~170
Generation of Pretilt Angle in NLC and EO Characteristics of Photo-aligned TN-LCD on Soluble Polyimide Surface Containing Trifluoromethyl Moieties
Seo, Dae Sik ; Park, Tae Gyu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 176~176
The generation of pretilt angle in nematic liquid crystal (NLC) and electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-LCD with oblique p-polarized ultraviolet (UV) light irradiation on the two kinds of the soluble polyimide (PI) surfaces containing trifluorormethyl moieties were investigated. The generated pretilt angle of NLC is about 2.5' with P-polarized UV light Irradiation of 20'onPI-3 surface at 20 min. However pretilt angle of about 0.5'are observed on PI-1 and PI-2 surfaces. The generated pretilt angle of NLC on PI-3 surface may be attributed to the trifluoromethyl moieties attached to the lateral benzene rings. The voltage-transmittance and response time characteristics of photo-aligned TN - LCD with p-polarized UV light Irradiation of 20'on PI-1 surface at 20 min were almost same in comparison with the robbing-aligned TN-LCD. However, the high threshold voltage and slow response are observed on PI-3 surface. Also, the decay time
of photo-aligned TN-LCD is attributed to the anchoring energy of NLC.
A Finite Element Analysis on the Influence of Shield of a Vacuum Interrupter on the Electric Field Distribution
Choe, Seung Gil ; Gang, Hyeong Bu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 182~182
This paper describes the Influence of floating arc shield on the electric field in a vacuum interrupter.The electric potentials of floating shield and electric fields in a vacuum interrupter are analysed by a finite element method at various gap distances from 1mm to 12mm. The electric potentials of floating shield was increased with the gap distance, which is because the relative position of shield is closer to the fired contact so that the capacitance distribution inside interrupter is varied. The calculated results show that the maximum value of electric field in a vacuum interrupter with floating shield is nearly same to that without shield at short gap distance below 5mm, but at longer gaps more intensive electric field is achieved in interrupter with shield comparing with the model without shield, which is due to the influence of charged floating shield.
A removal characteristics of NOx at the cylinderical plasma reactor with magnetic field
Park, Jae Yun ; Lee, Jae Dong ; Go, Yong Sul ; Han, Sang Bo ; Park, Sang Hyeon ; Lee, Deok Chul ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 2, 1999, Pages 188~188
The effect of magnetic field was measured on NOx removal for cylinder-wire plasma reactorwith magnetic field applied to electric field vertically. Electric power was supplied to plasma reac-tor using rotating spark gap switch. Consumption power increased with increasing discharge volt-age. When magnetic field was applied to electric field vertically, consumption power was less thanthat without magnetic field because of lorenz's force. NOx removal rate of plasma reactor withmagnetic field were higher, 10-15%, than that of plsama reactor without magnetic field. And NOxremoval rate decreased with increasing gas flow rate.