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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 12, Issue 1 - Jan 1999
Volume 12, Issue 9 - 00 1999
Volume 12, Issue 8 - 00 1999
Volume 12, Issue 7 - 00 1999
Volume 12, Issue 6 - 00 1999
Volume 12, Issue 5 - 00 1999
Volume 12, Issue 3 - 00 1999
Volume 12, Issue 2 - 00 1999
Volume 12, Issue 12 - 00 1999
Volume 12, Issue 11 - 00 1999
Volume 12, Issue 10 - 00 1999
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A Study on Semi-Empirical LDD Process Design for Suppression of Hot-carrier Effects in Deep Submicron LDD-nMOSFETs
An, Tae Hyeon ; Kim, Nam Hun ; Kim, Chang Il ; Seo, Yong Jin ; Jang, Ui Gu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 193~193
This paper describes the trends of hot carrier and punchtrough phenomena as variations of some process parameters : LDD doses(P), spacer lengths, VT adjusting channel doses(BF₂) and implantation energies. We observed that the increase of channel dose prevented punchtrough phenomenon but hot-carrier was generated. As increase LDD dose, the characteristics of hot carrier and punchtrough were aggravated by reason of strong electric field produced near the drain. It was also thought that LDD dose of I~2×10¹³ was critical point. On the base of these trends, we proposed the Improved model by two dimensional electrical characteristics including generation rate of impact ionization and distribution of electric field using the simulators of TSUPREM-4 and MEDICI, sequentially.
The synthesis of diamond thin film by RF PACVD
Lee, Sang Hui ; Lee, Deok Chul ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 200~200
The diamond thin film was prepared by inductively coupled RF plasma-assisted chemical vapor deposition (RF PACVD). The growth rate at 0.3% methane concentration was 0.086um/h. The deposited diamond film quality was increased with decreasing methane concentration from H2-CH4 gas mixture. InH₂-CH₄-0₂ gas mixture, the Increase of oxygen concentration increased the crystallinity of diamond thin film .
Design and Simulation of the laminated planar chip ceramic bandpass filter for 1.9GHz
Kim, Ji Gyun ; Lee, Heon Yong ; Yun, Jung Rak ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 207~207
The purpose of this study is to establish the design theory of a laminated chip bandpass filter used for portable phones and to research on the design theory of bandpass filter using J-Inverter and the laminated chip bandpass filter. The precise design procedure is circuit parameters and the structural parameters will be derived. It was observed that the parameters were changed by the permittivity
even mode impedance
at the simulations. The size of chip filter in the simulation results is small when the pemittivity, attenuation pole and the pole-frequency are increased, respectively.
Synthesis and Characteristics of Layered Perovskite
Song, Min Seok ; Seo, Sang Il ; Lee, Jae Yeol ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 214~214
phases have received considerable attentions because of their metallic conductivity and giant magnetic resistivity. It is generally believed that layered that layered perovskite
phases are insulating and show no metallic transition. But recent reports revealed that MR effects were observed in some single crystal
phases. In this study, Layered perovskite
phases were synthesized by solid state reaction at 1400'C in the air atmosphere for wide range of x and their phases were confirmed by X-ray diffraction, Electrical and magnetic properties were measured down to 10K and the possibility of MR effects was investigated.
Electrical Potential Barrier and Resistive Characteristics of the Grain Boundaries in Semiconducting BaTiO₃Ceramics
Gang, Min Seok ; Heo, Hyeon ; Jo, Nam Hui ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 219~219
We investigated the effect of Mn addition as well as cooling rate on the electrical characteristics of grain boundaries in semiconducting BaTiO₃ ceramics. Complex impedance analysis and C-V measurement were applied to measure the resistance and electrical potential barrier of the grain boundaries in a temperature range from room temperature to Curie temperature. Depending on the Mn addition and cooling rate, the resistance and electrical potential barrier ranged from 25 to 9 M and from 0.03 eV to 1.84 eV, respectively. On the other hand, the grain resistance and donor concentration of the ceramics were not influenced by the parameters. Relationships of the boundary electrical structure with the Mn presence and boundary resistance were discussed.
Electrochemical Property of LiMn₂O₄Cathode Active Material Prepared by Sol-gel Method in Water
Jeong, In Seong ; Gu, Hal Bon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 229~229
We describe the electrochemical properties of the LiMn₂O₄ prepared by sol-gel process in water. The process yields inorganic oxides with good phase purity and well controlled stoichiometry The phase pure crystalline spinel LiMn₂O₄ was prepared by calcining the appropriate precursors at 800'C for several hours. The LiMn₂O₄ prepared in the present study exhibited the single phase of spinel based on cubic. In TG-DTA analysis, unheated precursor showed the mass loss and the onset of only one distinct process at 200~400'C when heated from 100'C to 1000'C. While the LiMn₂O₄ calcination at 800'C revealed stability by 900'C without phase change. The LiMn2O4 appeared reversible redox behavior at 3.0~4.5V vs.
. In the case of calcination at 800'C for 24 hour, the charge and discharge capacity was about 130mAh/g and 120mAh/g at first cycle, and after 50 cycle about 95mAh/g, 90mAh/g, respectively with cycle stability.
Study on Anode Materials for Lithium Ion Secondary Battery by Petroleum Cokes with Disordered Structure
Park, Jong Gwang ; Han, Tae Hui ; Park, Jong Hwan ; Han, Byeong Seong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 236~236
The electronic characteristics of various carbon materials have been investigated to study the correlation between structures of carbon materials and performance of negative electrodes of lithium ion secondary batteries. In this study, cokes from petroleum of various heat treatment were examined as an anode of lithium ion secondary battery. Petroleum cokes, used in this study MCL(Molten Caustic Leaching)treated In Korea Institute Energy Research, were carbonized at various temperatures of 0, 500, 700, 900 'Cat a heating rate of 2 'C/min for 1h. The electrolyte was used 1M LiPF6 EC/DEC (1:1) Charged and discharged in the voltage range of OV to 2VThe petroleum cokes heat-treated at 700'C had an initial capacity over 560mAh/g, which was beyond the theoretically maximum capacity of 372mAh/g for LiC6. These phenomena will be expected that car-bon materials of disordered structure would have higher capacity than that of the graphitic carbon materials.
A Study on the High Voltage Measurement using Voltage Division Ceramic & Piezoelectric Actuator
Ryu, Ju Hyeon ; Lee, Yong U ; Yun, Hyeon Sang ; Park, Chang Yeop ; Jeong, Yeong Ho ; Ha, Bok Nam ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 242~242
In order to accurately measure the high voltages of 22.9 kV (Y) power distribution lines for advanced power distribution, voltage measurement study was done with BaTiO₃ system ceramics and Rosen type-piezoelectric actuator. When line-voltage is 13,200 [V] at the room temperature, input voltage of piezoelectric actuator is about 250 [V] , and output voltage of it was 31 [V] without load. Temperature stability from -25'C to 5O'C was less than ±3%.
Dependency on Temperature, Electric Field, Pressure and Dielectric properties of XLPE/EPDM
Park, Dae Hui ; Kim, Dong Sik ; Han, Sang Ok ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 248~248
In this paper, we evaluated the dielectric properties of XLPE, EPDM and EPDM/XLPE depened on electric field, pressure and temperature respectively. Test result presented that dielectric loss(tanδ) of XLPE, EPDM and XLPE/EPDM increased with temperature. But it skewed anomalous temperature characteristics for XLPE specimen. We also got the conclusion from this test that tanδof all specimens quite depended on temperature rather than pressure or electric field. The salient characteristic of XLPE/EPDM was that the dielectric properties was progressed, though the power loss of XLPE, EPDM was increased. With the experience result, we considered that the parameter of ε tanδ would be useful method to evaluate the dielectric properties and degradation.
A Study on the Electrical Properties and Fabrication of BaTiO₃Ceramics Thin Film for the Next Generation Dielectric Thin Film by RF Sputtering
Ryu, Gi Won ; Lee, Mun Gi ; Jeong, Jang Ho ; Lee, Yeong Hui ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 254~254
In 4his paper BaTiO3 thin film on Pt/Si02/Si(100) substrates were fabricated by RF sputtering, whosestructural, crystallographic and electrical properties were examined according to the deposition condition and annealing temperature. The optimum Ar/O2 gas flow rate, sputtering pressure, RF power and annealing temperature were 4/1, 12mTorr, 120W and 650'C for 1 hr., respectively. The growth rate of deposition film was about 0.75A /set From the results of X-ray diffraction pattern and D-E hysteresis characteristics, BaTiO3 thin film deposited at the optimum conditions was a ferroelectric phase. The dielectric constant and loss were about 683 and 1.1% at 1 KHz respectively. The leakage current of thin film capacitor depended on the RF power during the deposition. Increasing the RF power, because of the increased activation energy, the leakage current was increased and the sheet resistance was decreased.
Effects of Heat Treatment on Properties of Boron Doped CdS Films
Lee, Jae Hyeong ; Lee, Ho Yeol ; Park, Yong Gwan ; Sin, Seong Ho ; Sin, Jae Hyeok ; Park, Gwang Ja ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 263~263
Effects of annealing temperature and atmosphere on properties of boron doped CdS films Prepared byGBD(Chemical Bath Deposition) was Investigated. Heat treatment in H₂ increases the grain size of films and improves the crystallinity. Also, the resistivity of H₂-annealed films was reduced. In case of annealing at 300'C the resistivity of the film was 0.8 -cm. However, for N₂ and air atmosphere, the resistivity of CdS films was higher and the optical transmittance was lower than those of H₂-annealedfims. This result suggests that annealing In hydrogen atmosphere is suitable for photovoltaic device application
Electrical Properties of Polyimide Organic Thin Films
Jeon, Dong Gyu ; Lee, Gyeong Seop ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 271~271
We give pressure stimulation into organic thin films and detect the induced displacement current, then manufacture a device under the accumulation condition that the state surface pressure is 15[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pres-sure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Polyimide (PI)/Au, the number of accumulated layers are 31,35 and 41. The I-V characteristic of the device is measured from 0 to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers and the energy density for an input voltage show desired results, and the insulation properties of a thin film is better as the distance between electrodes is larger.
Photoluminescent and Electroluminescent Characteristics of Thin Films of Terbium Complex with Various Ligand Prepared by Vacuum Evaporation Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 278~278
Organic light-emitting diodes (OLEDS) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multi-layer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, various Terbium complexes such as Tb(ACAC)₃(Phen), Tb(ACAC)₃(Phen-Cl) and Tb(TPB)₃(Phen) were synthesized and the photoluminescence(PL) and electroluminescence(EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL (hole transporting layer) /terbium-complex/ETL (electron transporting layer) /cathode where TPD was used as an hole transporting and Alq3 and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electrolumlnescence (EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with J-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model was discussed.
The relationship between the azimuthal anchoring energy and the response characteristics in in-plane-switching LCD
Seo, Dae Sik ; Choe, Jae Hak ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 3, 1999, Pages 284~284
The relationship between the azimuthal anchoring energy and the response characteristics in plane switching (IPS) liquid crystal display (LCD) were investigated. The response time of photo-aligned IPS-LCD is fast compared with rubbing-aligned IPS-LCD on polyimide (PI) surface. The decay time
is decreased with increasing the azimuthal anchoring energy
due to the steric interaction between the LC molecules and side chain of polymer. The viewing angle of IPS-LCD is increased by using photo-depolymerizatin method about
at all direction.