Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Institute of Electrical and Electronic Material Engineers
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
Editor in Chief :
Volume & Issues
Volume 12, Issue 1 - Jan 1999
Volume 12, Issue 9 - 00 1999
Volume 12, Issue 8 - 00 1999
Volume 12, Issue 7 - 00 1999
Volume 12, Issue 6 - 00 1999
Volume 12, Issue 5 - 00 1999
Volume 12, Issue 3 - 00 1999
Volume 12, Issue 2 - 00 1999
Volume 12, Issue 12 - 00 1999
Volume 12, Issue 11 - 00 1999
Volume 12, Issue 10 - 00 1999
Selecting the target year
Growth and Characteristics for NO/N₂O Oxynitrided and Reoxidized Gater Dielectrics for Charge Trapping NVSMs
Yun, Seong Pil ; Lee, Sang Eun ; Kim, Seon Ju ; Seo, Gwang Yeol ; Lee, Sang Bae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 389~389
Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS(secondary ion mass spectrometry) analysis and C-V(capacitance-voltage) method in order to use the gate dielectric for charge-trap type NVSMs(nonvolatile semiconductor memories) instead of ONO(oxide-nitride-oxide) stacked layers. Nitrogen distribution of NO(nitric oxide) annealde film is sharply peaked at the Si-SiO₂interface, wnile it is broader for N₂O(nitrous oxide) annealed film. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was able to be precisely controlled. For the films annealed in NO ambient at 800℃ for 300min. followed by reoxidized at 850℃, the maximum memory window of 3.5V was obtained and the program condition was +12V,1msec for write ande -13V,1msec for erase.
Effect of Tungsten Polycide Electrode Formed by SiH₄ and SiH₂Cl₂ Gases on Gate Oxide Characteristics
Seo, Yong Jin ; Kim, Sang Yong ; Jang, Ui Gu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 394~394
Tungsten silicide(WSix) films formed by WF6 and SiH₄gass have problems such as peeling of the films and degradation of gate oxide. We have investigated the gate oxide integrity(GOI) with the W-polycide gate formed by WF6 and SiH₂Cl₂ gases. As a results, W-polycide gate formed by SiH₂Cl₂ gases showed more improved characteristics such as the lower fluorine effects on gate oxide intergrity, the lower sheet resistiances, the larger TBD/QBD values under constant current stress test(CCST) than SiH₄gases. But breakdown characteristics with variations of source gases and poly-Si thickness not showed apparent differences.
Fabrication of a Cymbal Actuator and Analysis of Displacement Characteristics
Choe, Seong Yeong ; Kim, Jin Su ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 401~401
In this study, brass endcap with 220.127.116.11mm contact surface and bronze endcop with 3mm contact surface were machined using punch die while keeping the cavity diameter in 9.25mm and cavity depth in 1.5mm. Displacement characteristics of the cymbal actuator with each of endcap thickness in 0.15. 0.2, 0.3, 0.5mm were investigated. Displacement increased with increasing contact surface, while resonant frequency decreased. Displacement increased with decreasing endcap thickness. Displacement increased with increasing applied voltage. Displacement of the cymbal actuator with brass endcap was larger than that of the cymbal actuator with bronze endcap. In conclusion, when the cymbal actuator is fabricated, to increase displacement value, the contact surface of endcap should be wider and the stiffness of endcap material should be lower
The Degradation Behavior of ZnO Varistor under Continuows DC Stress
Nam, Chun U ; Park, Chun Hyeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 407~407
The degradation behavior of ZnO varistor(DZNR) composed of Zn-Bi-Co-Mn-Sb-Cr-Ni oxide was investigated under the stress condition, such as 363K/0.8V 1mA/12h+388K/0.85V1mA/12h, and compared with the domestic commercial ZnO varistor(ZNR). The second stressed DZNR marked the fact that, in the reverse direction rate variation rate of varistor voltage was less than 5%, the nonlinear exponent was more than 20, and the leakage current was less than 10uA. It is the fact that that the leakage current, particularly, what is remarkable, exhibited a negative creep phenomenon with increasing stress time during the stress. As a result, DZNR showed a stable a I-V characteristics. On the contrary, ZNR showed a large degree of degradation after the first stress and was nearly degraded after the second stress.
A Study on the Insylating Properties of Epoxy insulator by Water Degradation
Im, Gyeong Beom ; Lee, Baek Su ; Hwang, Myeong Hwan ; Na, Dong Geun ; Lee, Deok Chul ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 416~416
This paper deals with the change of resistivity, surface potential decay, and dielectric properties on water degraded epoxy insulator. From the experimental results on the surface potential decay of water degraded-samples, it was found that the accumulation of charge is decreased and the surface potential decay time is shortened by the interaction of polar hydroxyl groups induced on the treated surface as the increment of treatment time. The positive charging on the treated surface compared with negative charging is relatively lowered by the induction of polar hydroxyl groups. The relative dielectric constant was increased by about three times as compared with that of untreated sample, since interfacial polarization and dipole orientated-polarization are increased by the increment of free volume and the decrement of van der Waals force owing to percolation of water molecules.
Characterization of Failed Underground Distribution Cables
Jeong, Chang Su ; Lee, U Seon ; Han, Jae Hong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 423~423
This study present the characterization and AC breakdown test for identifying the cause of premature failure of 6 URD power cables which failed during service. The failed cables used for more than 10 years showed that the main cause of failure was water tree growth due to the water penetration. Almost trees grew from interface between insulation shield and insulation layer. Especially, three was a close relation between water tree length and content of ionic impurities. On the other hand, the failed cable used for less than 1 year has protrusion and void at the same position. From this, it can be concluded that the main cause of premature failure was the defects from manufacturing processes. In order to prevent the premature failure of URD cable, it is needed to improve the service environment, raw materials and manufacturing process.
Preparation and Dielectric Properties of the PbTiO₃ Thin Film by Sol-Gel Method
Jeong, Jang Ho ; Lee, Mun Gi ; Ryu, Gi Won ; Choe, Hyeong Ok ; Lee, Yeong Hui ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 430~430
In this study, ferroelectric PbTiO₃ thin films were prepared by Sol-Gel method for the application to the dielectric material of DRAM. The stock solutions were spin-coated on the Pt/SiO₂/Si substrate. And dried at 400℃for 1hour. The coating process was repeated 5 times and then the specimens sintered at 500~800℃ for 1hour. The final thickness or this thin film was about 3000Å. Crystallization behavior of PbTiO₃ thin films were investigated as a function of annealing temperature by the XRD. The microstructure of the thin film were investigated by SEM. The ferroelectric perovskite single were observed in the film annealed at 700℃ for 1 hour. In the case of PbTiO₃thin films annealed at 700℃ for 1hour, dielectric constant and dielectric loss showed the good value of 324, 2.0%, respectively.
Electrical Properties of BST Thin Films with Ar/O₂ratio
Sin, Seung Chang ; Lee, Mun Gi ; Jeong, Jang Ho ; Bae, Seon Gi ; Lee, Yeong Hui ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 435~435
In this study(Ba, Sr)TiO₃[BST] thin films were fabricated on Pt/SiO₂/Si substrate by RF sputtering technique. We investigated the effect of deposition conditions(especially Ar/O₂ratio) on the structural and electrical properties of BST thin film. And the dielectric properties were also investigated for the DRAM application. All BST thin films showed XRD patterns of perovskite polycrystalline structure. BST thin films showed fairly good fatigue characteristics after application of 10 10switching cycles. For the BST(Ar/O₂=80/20) thin film after polarization switching cycles of 10 10,remanent polarization and coercive field were given as 0.084uc/cm2 and 1.954kV/cm, respectively. The leakage current density was less than the 4*10-9A/cm2 with applied voltage of 3V.(Ba, Sr)TiO₃thin film capacitors hazing good structural and electrical properties are expected for the application to the dielectric material of DRAM.
Properties of ZnO thin films by the ultrasonic spray pyrolysis technique
Lee, Yeong Jin ; Kim, Hak Bong ; Jeong, Jin Yeong ; Lee, Man Hyeong ; Gwon, Hyeok Chae ; No, Yong Rae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 442~442
We have designed an ultrasonic spray pyrolysis system for deposition of ZnO thin films and determined the optimal conditions for deposition of the films. Through experiments to check the effect of various deposition conditions for deposition of the films. Through experiments to check the effect of various deposition condition, we have found that the zinc acetate solution can provide good ZnO films at the substrate temperature of 420[℃], the zinc acetate solution of 0.05 mole doped by 20 atomic percent of LiCL. Further, the resistivity of ZnO films has also increased to 107[Ω.cm] through the annealing under the oxygen environment. Optimal substrate rotation rate and nozzle tilting angle have also been determined to improve the uniformity of the film. ZnO thin films deposited with the conditions show good thickness uniformity over 4'' wafer, and good c-axis orientation.
Dependence of the properties of high dielectric(Pb0.72La0.28)Ti0.93O₃thin films on the laser processing parameters
Sim, Gyeong Seok ; Lee, Sang Ryeol ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 450~450
PLT(28) Pb0.72La0.28Ti0.93O₃) dielectric thin films have been deposited on Pt/Ti/SiO₂/Si substrates in situ by a laser ablation. We have systematically changed the deposition temperature from 450℃ to 700℃, and laser fluence from 0.5 J/cm² to J/cm² . The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy increased. The PLT thin film with columnar structure showed good dielectrid properties.
Deposition and characterization of tribologic DLC thin films fabricated by pulsed laser deposition by pulsed laser deposition
Sim, Gyeong Seok ; Lee, Sang Ryeol ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 456~456
DLC thin films have been fabricated by pulsed laser deposition with various deposition parameters. The characterization of the fabricated thin films were seriously changed by deposition parameters. As the film growth energies provided by the deposition temperature and the laser energy density were highly increased, the film showed graphite properties because the bonding of DLC thin film was broken. The measurement of sheet resistance confirmed the above results. So the growth energy should be optimized to fabricate high quality DLC thin films. DLC thin film showed high hardness and its friction coefficient was measured to be about 0.1 regardless of the load of the ball pin.
Optical Properties of Thermally Evaporated Sb₂S₃Thin Films
Kim, Jong Gi ; Lee, Hyeon Yong ; Jeong, Hong Bae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 462~462
Optical properties in Sb₂S₃thin films prepared by thermal evaporation have been investigated. The as deposited films are found to be amorphous with a high resistance in nature. An amorphous-crystalline phase transition is also observed in the subsequently annealed films at 498K in vacuum 10-3 Torr. The films shows a indirect optical energy gaps(Eop) lie in the regions of 2.04 and 1.92eV for amorphous and crystalline phases, respectively. As the results of photo-luminescence spectra analysis, the state density in the non-extended region was relatively increased by the annealing. Therefore we assume that the radiative transition was more dominant than non radiative transition in Sb₂S₃thin films.
Annealing effect on the generation of pretilt angle LC alignment using the photo-depolymerization reaction
Seo, Dae Sik ; Yu, Mun Sang ; Hwang, Jeong Yeon ; Kim, Hyeong Gyu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 468~468
We investigated the annealing effect on generating pretilt angle and aligning liquid crystal(LC) using the photo-depolymerrization reaction in this study. In case of rubbing polyimide(PI) surface with the side chain, pretilt angle tends to increase with increasing the annealing time. It is considered because the steric interaction is increased by annealing which cause the side chain to come back to original position. For obliquely irradiating ultraviolet(UV) light on PI surface, pretilt angle shows to o and is increased by annealing. The pretilt angle in rubbed PI surface is much higher than in photo-aligned PI surface, It is attributed to the steric interaction and the number of LC molecular arrangement on azimuthal ditection. In addition, in case of obliquely irradiating UV light on PI surface, it showed LC alignment to increase by annealing. It can be regarded due to the fact that the re-alignment of LC molecule is improved to residual polymer direction by annealing.
Pretilt Angle on Nematic Liquid Crystals with Negative Dielectric Anisotropy and CN Mixtures
Seo, Dae Sik ; Lee, Seung Hui ; Gwon, Deok Yong ; Han, Eun Ju ; Kim, Jae Hyeong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 12, issue 5, 1999, Pages 476~476
In this paper, we have investigated the controlof high pretilt angle in nematic liquid crystals(NLCs) on rubbed polyimide(PI) surfaces. The pretilt angle of negative type NLC( <0) is larger than that of the positive type NLC ( >0) on rubbed PI surface and this effect is more pronounced with side chane type of PI. We consider that the pretilt angle of NLC is increased due to increasing the steric interaction between perpendicular component of permittivity of NLC and rubbed PI. Also, the pretilt angle increase with a small addition(15 wt%) of cyano (CN) content to super flourinated NLSs on rubbed PI surface and then saturates with further addition.