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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 13, Issue 12 - Nov 2000
Volume 13, Issue 11 - Nov 2000
Volume 13, Issue 9 - Sep 2000
Volume 13, Issue 10 - Sep 2000
Volume 13, Issue 8 - Aug 2000
Volume 13, Issue 7 - Jul 2000
Volume 13, Issue 6 - Jun 2000
Volume 13, Issue 5 - Apr 2000
Volume 13, Issue 4 - Apr 2000
Volume 13, Issue 3 - Mar 2000
Volume 13, Issue 2 - Feb 2000
Volume 13, Issue 1 - Jan 2000
Selecting the target year
Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 1~5
Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25
10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.
A Study on Etching Characteristics of Molybdenum Thin Films by Magnetically Enhanced Reactive lon Etching System
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 6~12
In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.
A study on I-V characteristics in JBS rectifiers according to PN junction structures
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 13~20
In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[
] and 2[
], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1
10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[
]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[
] in comparison with the rectifier with abrupt junction.
Surface Photovoltage of
As/GaAs Multi-Quantum Well Structures
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 21~27
We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.
Effects of Post-Annealing for the (Ba, Sr)
Thin Films Prepared by PLD
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 28~32
Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.
Fabrication of Multilayer Piezoelectric Actuator with AgPd Internal Electrode
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 33~38
In this study, multilayer piezoelectric actuators were fabricated with 75 layers by a conventional multi-layer capacitor (MLC) techniques, using 70Ag/30Pd paste as an internal electrode which can be sintered at low temperature and have cost down effect in mass productions. The multilayer piezoelectric actua-tors had no defects such as diffusions of internal electrode to ceramic bodies and shortages of internal electrodes. The multilayer piezoelectric actuators did not show the crack in the ceramics parts and the gapping phenomena in the external eletrodes when Ag paste was used as external electrodes. The multilayer piezoelectric actuators showed a maximum displacement of 4
at 100V dc voltage and kept the maximum displacement constant for 300 seconds. The multilayer piezoelectric actuators showed good matching properties between ceramic bodies and AgPd internal electrodes. We confirmed the possibility of large-scaled production of the multilayer piezoelectric actuators with superior electrical properties and cost down effect using 70Ag/30Pd paste as an internal electrodes.
The Vibration Analysis of Metal-Piezoceramic Laminated Thin Plates by Using a Equivalent Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 39~46
An analysis of the free vibration for the metal-piezoceramic laminated thin plates is described. The purpose of this study is to develop a equivalent method for the free vibration analysis of metal-piezoce-ramic laminated thin plate which are not sysmmetric about the adhered layer and the piezoelectric effect. In order to confirm the validity of the vibration analysis, double Fourier sine series is used as a modal displacement function of a metal-piezoceramic laminated thin plate and applied to the free vibration analysis of the plate under various boundary conditions.
Influence of Stain on the High Frequency Impedance of Highly Magnetostrictive Films
;M. Inoue;K. I, Arai;;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 47~51
To make a practical application of a micro-strain sensors with ultrahigh sensitivity, a strain on electrical properties of micro-patterned amorphous (Fe\ulcornerco\ulcorner)\ulcornerSi\ulcornerB\ulcorner films had influenced on the impedance over frequency range from 1 MHz to 1 GHz. Reflecting excellent magnetomachanical couping properties of films, high frequency impedance was subject to change sensitively by a strain : a change in impe-dance of 39% was observed at 200 MHz applied a strain of 224
10\ulcorner. To determine a optimum shape of micro-patterned films, film impedance was analyzed by virtue of its constitutive components of resis-tance and reactance. Result was shown that reduction of the resistance term(hence increase of resultant reactance term) of impedance is more effective for enhancing the strain sensitivity of films at relatively low frequency range.
Preparation and Characteristics of Transparent Anti-static Films
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 52~59
In order to develop the transparent anti-static film with higher than 80% transparency to visible light, organic conductive compounds, N-methyl phenazinium 7,7,8,8-tetracyanoquinonedimethane (TCNQ) com-plex salts was synthesized and bar-coated on the polythylene terephthalate (PET) film using polymer binders. The best surface properties were obtained when acrylic binder was used. A single layer of TCNQ made of a acrylic binder showed a surface resistance of 10\ulcorner
/ , a conductivity of 10\ulcorner S/cm, and a transparency of 75%. An optical microscopic examination revealed that the binder was first solidi-fied on the surface of PET film over which the needle-shaped TCNQ crystals were grown. An acrylic polyol coating over the TCNQ layer improved the transparency to 87%, becuase the acrylic polyol covers the surface of TCNQ crystals to reduce the surface roughness. This conductive material has thermal stability at room temperature and 4
over 4,000 h.
Laser Energy Density Dependence Characteristics of PLZT Thin Films prepared by a PLD for Memory Device
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 60~65
The structural and electrical characteristics of PLZT thin films fabricated onto Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films were fabricated with different energy density by pulsed laser deposition. This PLZT thin films of 5000 thickness were crystallized at 600
, 200 mTorr O\ulcorner pressure for 2 J/
laser energy density, the arain structure was transformed from planar to columnar grain. It was clearly noted from the SEM observations that oxygen pressured laser powers affect microstructures of the PLZT thin films. 14/50/50 PLZT this film showed a maximum dielectric constant value of
\ulcorner=1289.9. P-E hysteresis loop of 14/50/50 PLZT thin film was flim ferro-electric. Leakage current density of 14/50/50 PLZT thin film was 10\ulcorner A/
Structural and Electrical Characteristics of the SBT Thin Films Prepared by PLD Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 66~74
The structural and electrical characteristics of SBT thin films, fabricated on Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition(PLD), were investigated to develop ferroelectric thin films for capacitor lay-ers of FRAM. EFfects of target composition on the characteristics of SBT thin films were examined. Target were prepared by mixed oxide method, and composition of Sr/Bi/Ta on SBT was changed to 1/2/2, 1/2.4/2, 1/2.8/2, 0.8/2/2 and 1.2/2/2. SBt thin films were fabricated, as a function of substrate temperature and oxygen pressure, by PLD. The optimized ocndition, to fabricate high quality SBT thin films, was 700
of substrate temperature, 200 mTorr of oxygen pressure, and 2 J/
of laser energy density. Maximum remnant value(2Pr) of 9.0
, coercive field value(Ec) of 50 kV/cm, dielectric constant value of 166, and leakage current densities of <10\ulcorner A/
were observed for the films with 1/2/2 composition, which was prepared at the above PLD condition.
Investigation of pretilt generation by UV light irradiation during imidization of polyimide
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 75~79
In this study, we investigated the pretilt angle generation and liquid crystal (LC) alignment by ultravi-olet (UV) light irradiation during imidization of polymide. The generated pretilt angle of nematic (N) LC by using the in-situ photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, generated pretilt angle of NLC tends to increase by annealing. In case of using the polymer(AL-3046), we found that the in-situ Uv photo-alignment method has higher thermal stability of LC alignment, but it has a disadvantage to control pretilt angle.
Evaluation of Sticking Coefficient in BSCCO Thin Film Fabricated by Co-sputtering
Lee, Hee-Kab ; Park, Yong-Pil ; Lee, Kwon-Hyun ; Lee, Joon-Ung ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 80~84
BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73
and decreases linearly with temperature over 73
. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.
Analysis of Predischarge Processes of
Gas Stressed by lmpulse Voltages under Nonuniform Electric Field
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 1, 2000, Pages 85~93
In this paper, the predischarge propagation processes of SF\ulcorner gas stressed by impulse voltages under nonuniform electric field perturbed by a needle protrusion are described. The statistical and formative time-lags and the time interval between leader pulses were investigated on the basis of the predischarge current measured in the gas pressure range of 0.1~0.5 MPa. The predischarge current is closely related to the waveform, amplitude and polarity of applied votages, the gas pressure and the gap geometry. Both the positive and negative predischarge processes in nonuniform electric field develop in a regime of stepwise leader propagation leading to electrical breakdown. The mean of the time interval between leader pulses gives about a factor of 10 higher for the negative than for the positive leader current puls-es. According as the gas pressure increases, the statistical time-lag was almost unchangeable, but the formative time-lag was gradually decreased.