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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 13, Issue 12 - Nov 2000
Volume 13, Issue 11 - Nov 2000
Volume 13, Issue 9 - Sep 2000
Volume 13, Issue 10 - Sep 2000
Volume 13, Issue 8 - Aug 2000
Volume 13, Issue 7 - Jul 2000
Volume 13, Issue 6 - Jun 2000
Volume 13, Issue 5 - Apr 2000
Volume 13, Issue 4 - Apr 2000
Volume 13, Issue 3 - Mar 2000
Volume 13, Issue 2 - Feb 2000
Volume 13, Issue 1 - Jan 2000
Selecting the target year
Effect of Ar Gas Plasma Treatment of Plastic Ball Grid Array Package
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 805~811
Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.
Influence of DI Water Pressure and Purified
Gas on the Inter Level Dielectric-Chemical Mechanical Polishing Process
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 812~816
It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified
)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P
gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P
gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.
Investigation of Annealing Effect for a-SiC:H Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 817~821
In this work, we have investigated the dependence of annealing temperature(T
a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH
gas mixture. The experimental results have shown that the optical energy band gap(E
opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.
Determination of Memory Trap Distribution in Charge Trap Type SONOSFET NVSM Cells Using Single Junction Charge Pumping Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 822~827
interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24
for tunnel oxide, 74
for nitride and 25
for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97
10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04
19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.
Characterization of AlN Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy on Si Substrate
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 828~833
Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90
. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85
and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.
The Structure and Electrical Characteristics of ZnO Varistors Surface using-Fractal
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 834~839
The structural properties that SEM photograph of ZnO varistors surface studied by fractal mathematics program were investigated to verify the relations of electrical characteristics. The SEM photograph of ZnO varistors surface were changed by binary code and the grain shape of that were analyzed by fractal dimension. The void of ZnO varistors surface was found by fractal program. The relation between grain density and electrical properties depend on fractal dimension. The grain size in ZnO varistors surface was decreased by increasing of Sb
addition. The spinel structure was formed by Sb
addition and it was depressed the ZnO grain formation. The grain size of ZnO by Sb
addition were from 5 to 10[
]. Among of ZnO varistors, fractal dimension of ZnO4 was very high as a 1.764. The density of grain boundary in ZnO2 and ZnO3 varistors surface was 15[%] by formed spinal structure. The breakdown electric field of ZnO2 that fractal dimension has 1.752 was very high to be 8.5[kV/cm]. When the fractal dimensin was high, the grain shape of ZnO varistors was complex and the serial layers of ZnO grain was increased.
A Study for Solenoid-Type RF Chip Inductors
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 840~846
In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al
core material were investigated. The size of the chip inductors fabricated in this work were 15
10㎣, and 2.4
1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.
Characterization of Field-Aged Polymer Insulators for Distribution Power Systems
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 847~858
The aging characteristics of 2 kinds of 3 years field-aged distribution polymer insulators which were dismounted from 5 regions have been investigated by electrical test and material characterization. Although the tan
of specimens prepared from weathershed was increased with surface aging, the tan
and leakage current of real products had no difference between virgin and dismounted ones. Due to the aging, all dismounted polymer insulators had micro-cracks on the surface of weathershed and only the products of manufacturer B showed the reduction of OIT(oxidation induction time). But, there were no differences between virgin and dismounted products in contact angle and chemical structure. Therefore, it can be considered that the aging is only limited on the surface of dismounted polymer insulators and that NMR technique are very useful to evaluate the aging of polymer materials.
A Study for the Characteristics of multi-layer VOx Thin Films for Applying to IR Absorbing Layer
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 859~864
Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V
5/ thin films. Then we annealed them under 300
. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V
5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V
5/ thin films from the result of AES analysis. We changed the thickness of V
5/ about 20 to 150
and thickness of V about 10 to 20
. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.
Detecting Characteristics of Catalytic Combustible Gas Sensor
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 865~870
In this paper, catalytic combustible gas sensor was fabricated and tested under flammable gases such as CH
by using Pt coil as a heater and/or temperature sensing element. Fine
powder was used for a bead and Pt, Pd noble metal powder for a catalyst. Resistance variation of Pt wire was traced by the changes of the gas concentrations in a chamber. Output voltage was then monitored to obtain the gas concentration from the resistance variation. In this experiment, MgO was used to protect cracks in the based and TiO
to increase the sensitivity of the sensors. Water glass was also added to enhance the selectivity to the combustible gases.s.
Liquid Crystal Alignment Using a In-situ Photoalignment Metho
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 871~875
Effects of liquid crystal (LC) alignment using a in-situ photoalignment method by polarized UV exposure on a polyimide (PI) surface with medium side chain were studied. The generated pretilt angle in nematic(N) LC using a in-situ photoalignment method was smaller than that of a conventional photoalignment method for short UV exposure time. Also, the pretilt angle of NLC using a in-situ photoalignment method increases with increasing UV exposure time on the PI surfaces. Finally, the pretilt angle of NLC can be improved by annealing treatment.
A Study on Luminescent Characteristics according to Crystal Defect of ZnS Powder Phosphors
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 876~882
ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950
, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050
, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.
Wide Viewing Angle Characteristics Using Novel Vertical-Alignment 1/6
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 883~886
We have developed a novel vertical-alignment(VA) - 1/6
mode that provides a wide viewing angle for nematic liquid crystal (NLC) with negative dielectric anisotropy on a homeotropic polyimide (PI) surfaces. Good voltage-transmittance curves were achieved with the new VA - 1/6
cell model without a negative compensation film. The viewing angle of a new VA -1/6
cell without a negative compensation film was wider than that of a conventional VA cell. Finally, the wide viewing angle using the new VA-1/6
cell mode can be achieved.
Effect of Rare Earth (Gd, Er) on the Permeabilities of Ba-Ferrite
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 13, issue 10, 2000, Pages 887~894
In this paper, we have studied the effect of earth (Gd, Er) on the various properties (microstructure, shrinkage, initial permeability, permeability as a function of frequency, etc) of Ba-ferrite. The permeabilities were analyzed by Impedance Analyzer(100KHz~40MHz) and Network Analyzer(30KHz~3㎓). As the result of XRD, all of the Ba-ferrite doped with rat earth was found to be Y-hexagonal phase. The resonance frequencies at the maximum imaginary value of complex permeability were observed near 2㎓. The complex permeabilities of the Ba-ferrite doped with Gd
at 3wt% and doped with Er
at 3wt% and 5wt% as a function of frequency showed the highest value at sintered temperature at 95