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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 14, Issue 12 - Dec 2001
Volume 14, Issue 11 - Nov 2001
Volume 14, Issue 10 - Oct 2001
Volume 14, Issue 9 - Sep 2001
Volume 14, Issue 8 - Aug 2001
Volume 14, Issue 7 - Jul 2001
Volume 14, Issue 6 - May 2001
Volume 14, Issue 5 - May 2001
Volume 14, Issue 4 - Apr 2001
Volume 14, Issue 3 - Mar 2001
Volume 14, Issue 2 - Feb 2001
Volume 14, Issue 1 - Jan 2001
Volume 12, Issue 4 - 00 2001
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A Study for the Improvement of Torn Oxide Defects in Shallow Trench Isolation-Chemical Mechanical Polishing (STI-CMP) Process
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 1~5
STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.
Study the Feasibility of Optical Lithography for critical Lyers of 0.12
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 6~11
We studied the feasibility of optical lithography for the critical layers of 0.12
DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12
design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.
Design of the Piezoelectric Sounder Using the PMN-PT-PZ
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 12~19
In this study, the physical properties of the piezoelectric sounder with metal-piezoelectric ceramics were analyzed. The dielectric and piezoeletric properties of 0.5wt% MnO
and NiO doped 0.1Pb(Mg
ceramics were investigated aiming at acoustic transducer applications. The acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been investigated. Also, the acoustic characteristics for the geometrical form of case were investigated. The piezoelectric sounder with 200kHz resonant frequency and 20kHz bandwidth was designed by considering the sharp directivity and the sound pressure.
Piezoelectric and Electric Field Induced Strain Properties of PMW-PNN-PZT Ceramics with the Substitution of Ba
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 20~25
To develop the piezoelectric actuator, the structural, dielectric and piezoelectric properties and electric fieldinduced strain of the ceramics(Pb
(x=0, 0.01, 0.03, 0.05, 0.07, 0.1) were investigated with the substitution of Ba. The tetragonality of crystal structure and grain size decreased by the substitution of Ba. Curie temperature decreased due to the decrease of the tetragonality, and dielectric constants increased with the substitution of Ba. The coercive field, remnant polarization and electromechanical coupling factor also decreased, whereas the piezoelectric constatns d
33/ and d
31/ were showed the highest value of 430 and 209(x10
-12/C/N), respectively, because of the increase of dielectric constant. The strain induced by 60Hz AC electric field had the maximum value of 204x10
-6/Δℓ/ℓ at the substitution of Ba 3mol%. As the applied electric field approaches to the coercive field, the piezoelectric element is depolarized and the electric field induced strain revealed non-linearity.
A Study on Image Processing of Tree Discharges for Insulation Destructive Prediction
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 26~33
The proposed system was composed of pre-processor which was executing binary/high-pass filtering and post-processor which ranged from statistic data to prediction. In post-processor work, step one was filter process of image, step two was image recognition, and step three was destruction degree/time prediction. After these processing, we could predict image of the last destruction timestamp. This research was produced variation value according to growth of tree pattern. This result showed improved correction, when this research was applied image Processing. Pre-processing step of original image had good result binary work after high pas- filter execution. In the case of using partial discharge of the image, our research could predict the last destruction timestamp. By means of experimental data, this prediction system was acquired
3.2% error range.
Influence of Substrate Temperature of KLN Thin Film Deposited on Amorphoous Substrate
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 34~42
The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58
of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of
Electrical Properties of Plasma Polymerized Hexamethyldisiloxane Thin Film
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 43~47
Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10
-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.
Study on the Luminescence Properties according to ZnS multi-phase
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 48~53
The crystal structure of ZnS fabricated by gas-liquid phase reaction was refined by the Rietveld program using X-ray diffraction data. The R-weighted pattern (R
wp/) of ZnS powder was 10.85%. The fraction of HCP phase was closely related with extra amount of H
S gas. The lattice parameters and crystalline size were changed by the relative ratio of multi-phase. The luminescence property of ZnS:Cu, Al green phosphors prepared by conventional methods was good in the range of 91∼94% and 150∼190
, respectively. According to the maximum entropy electron density(MEED) methods, any defects in (001) plane of cubic phase were not found. We suggest that both the Rietveld and maximum entropy density methods may be useful tools for studying luminescence mechanism of other phosphors materials.
New MVA Cell Using a Homeotropic Photopolymer
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 54~57
We have developed a new multidomain vertical-alignment (MVA) mode using a homeotropic photopolymer that provides a wider viewing angle for nematic liquidcrystal (NLC) with negative dielectric anisotropy. Good voltage-transmittance curves for he new MVA cell using the homeotropic photopolymer were observed. The viewing angle of the new MVA cell using the homeotropic photopolymer was wider than that of the conventional VA cell. The wide viewing angle using the new MVA cell is attributable to 4-domain by the ribs with UV exposure on the photopolymer.
The Properties of Photoinduced Birefringence in Chalcogenide Thin Films by the Electric Field Effects
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 58~63
We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.
Thermodynamics for Formation of Each Stable Single Phase in Bi-superconductor Thin Films
Park, Yong-Pil ; Kim, Gwi-Yeol ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 64~68
High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T
sub/, and ozone gas pressures, PO
. The correlation diagrams of the BSCCO phases appeared against T
sub/ and PO
are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T
sub/ and PO
. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.
Critical Current Properties of Bi-2223/Ag tapes with respect to axial Strain
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 69~73
In this study, we fabricated Bi-2223/Ag high temperature superconducting tapes using PIT(Powder-In-Tube) process to apply the superconducting magnet, cable and etc. It is inevitable to deform the superconducting taps with axial strain for application. Therefore, for the characterization of the strain sensitivity of the superconducting properties, the degradation of Bi-2223/Ag tapes due to axial strain were investigated by measuring the critical current as a function of applied tension strain and external magnetic field. The critical current of Bi-2223/Ag tapes were decreased slightly up to 0.3∼0.4% applied strain but, drastically decreased more than these strains. Superconducting filament cores consisted of brittle ceramic fibers were broken easily by the large strain and current path were decreased simultaneously.
A Study on Design of Magnetic Thin Film Inductors for DC-DC Converter Applications
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 74~83
In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni
19/ (at%) alloy was selected as a high-frequency(
MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q
60, L = 1
90%), high-frequency (
5MHz), and solenoid-type magnetic thin film inductors was designed successfully.
A Study on Diagnosis of Transformers Aging Sate Using Wavelet Transform and Neural Network
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 1, 2001, Pages 84~92
In this papers, we proposed the new method in order to diagnosis aging state of transformers. For wavelet transform, Daubechies filter is used, we can obtain wavelet coefficients which is used to extract feature of statistical parameters (maximum value, average value, dispersion skewness, kurtosis) about each acoustic emission signal. Also, these coefficients are used to identify normal and fault signal of internal partial discharge in transformer. As improved method for classification use neural network. Extracted statistical parameters are input into an back-propagation neural network. The number of neurons of hidden layer are obtained through Result of Cross-Validation. The network, after training, can decide whether the test signal is early aging state, alst aging state or normal state. In quantity analysis, capability of proposed method is superior to compared that of classical method.