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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 14, Issue 12 - Dec 2001
Volume 14, Issue 11 - Nov 2001
Volume 14, Issue 10 - Oct 2001
Volume 14, Issue 9 - Sep 2001
Volume 14, Issue 8 - Aug 2001
Volume 14, Issue 7 - Jul 2001
Volume 14, Issue 6 - May 2001
Volume 14, Issue 5 - May 2001
Volume 14, Issue 4 - Apr 2001
Volume 14, Issue 3 - Mar 2001
Volume 14, Issue 2 - Feb 2001
Volume 14, Issue 1 - Jan 2001
Volume 12, Issue 4 - 00 2001
Selecting the target year
A Study of End Point Detection Measurement for STI-CMP Applications
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 175~184
In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.
The Study of Etching Characteristic in
Thin Film by Optical Emission Spectroscopy
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 185~189
In this paper, since the research on the etching of SrBi
(SBT) thin film was few (specially Cl
-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl
+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.
Effect of Li Addition on the Microwave Dielectric Propertis of
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 190~196
The microwave dielectric properties and a sintering behavior of MgTiO
ceramics doped with Li were investigated. The main composition was fixed as 0.94MMgTiO
was added excessively in the range of 0~10 mol% (with reference to Li atoms) and the specimens were sintered at 1200~140
for 4 hours. When the amount of Li was small the quality factor and dielectric constant were reduced, while those tow properties increased if the Li amount was above 1 mol%. But if Li was overly added those dielectric properties decreased again. Li, if added in the composition range of 1.0~3.0 mol%, can increase the quality factor of MgTiO
ceramics. The optimum amount of Li was 1.5mol% and sinterign condition was 1275
/4hr, at which we cudl obtain following results ; dielectric constant (
) of f20.0, quality factor(Qxf
) of 78,000 GHz and temperature coefficient of resonant frequency(
) of -1.6 ppm/
The structural and Microwave Dielectric Properties of (1-x)Ba(
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 197~201
The microwave dielectric properties of (1-x)Ba(Mg
(x=0.25~0.5) ceramics depending on the Ba(Co
[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575
. It was found that Ba(Mg
[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf
=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x
0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with
The Electrical and Optical Characteristics of Silica Sand by Terahertz Electromagnetic Pulses
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 202~206
Using THz time-domain spectroscopy (THz-TDS), the power absorption, the index of refraction, and the real conductivity of silica sand are measured from 0.1[Thz] to 0.5[Thz] frequency range. It is impossible to measure the characterization of the silica sand by simple electrical measurements using mechanical contacts, e.g., Hall effect or four-point probe measurements. However, the THz-TDS technique can measure not only electrical but also optical characterization of he sample. Also this technique can measure frequency dependent results. Especially, the real conductivity was increased according to THz frequency. This is unusual material compare with metal and semiconductor materials; the measured real conductivity are not followed by the simple Drude theory.
A Study on the Electromagnetic shielding Effectiveness Using Conductive Polymers
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 207~214
The conductive polymers, polyaniline (PANI) emeralidin base and 3,4-polyethylene dioxythiophene(PEDOT) were synthesized and coated on the PET film dealt with acryl type primer to study the electromagnetic shielding effectiveness. When both PANI and PEDOT were coated on the PET film dealt with acryl type priemer, their surface properties such as he adhesive increased. For PANI, when blended with the binder such as PMMA, it adhesive and surface hardness increased, too. The visible light transmittance decreased, while the electromagnetic shielding effectiveness increased, when coated thickness of PANI and PEDOT increased. For PANI, the electromagnetic shielding effectiveness increased as its surface resistance decreased. For PANI, when the surface resistance was 140 Ω/
, the shielding effectiveness was found to be 11 dB in the far field, and 13 dB in the near field at 1 GHz. For PEDOT, when the surface resistance was 200 Ω/
, the shielding effectiveness was found to be 3 dB in the far field, and 7dB in the near field.
Electrical Properties of Polyaniline according to Preparation Conditions
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 215~222
Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.
Fabrication of High-yield Si Thin-membranes by Electrochemical Etch-stop
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 223~227
In this paper, the authors present the fabrication of high-yield Si thin-membranes by electrochemical etch-stop in tetramethyl ammonium hydroxide (TMAH): isopropyl alcohol (IPA):pyrazine solutions. The current-voltage (I-V) characteristics of n- and p-type Si in TMAH:IPA;pyrazine solutions were analysed, repsectively. Open circuit potential (OCP)and passivation potential (PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was applied to the fabrication of 801 micro-membranes with 20.0
thickness on a 5" Si wafer. The average thickness of fabricated 801 micro-membranes on one wafer 20.03
and the standard deviation was
. The Si surface of the etch-stopped micro-membranes was extremely flat with no noticeable taper or nonuniformity. The results indicate that use of the electrochemical etch-stop method for the etching of Si in TMAH:IPA;pyrazine solutions provides a powerful and versatile alternative process for fabricating high-yield Si micro-membranes.
The Fabrication of Micro-heaters with Low Consumption Power Using SOI and Trench Structures and Its Characteristics
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 228~233
This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro elelctro mechanical system) applications usign SOI (Si-on-insulator) and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10㎛ thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD (resistance thermometer device) on the same substrate by suing MgO as medium layer. The thermal characteristics of the micro-heater wit the SOI membrane is 280
at input power 0.9W; for the SOI membrane with 10 trenches, it is 580
due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.
Field Electron Emission from Amorphous Carbon Thin Film Grown Using Rf Magnetron Sputtering Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 234~240
Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.
Optimization of Device Process Parameters for GaAs-AlGaAs Multiple Quantum Well Avalanche Photodiodes Using Genetic Algorithms
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 241~245
In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.
Correlation Between Deposition Parameters and Photoluminescence of ZnO Semiconducting Thin Films by Pulsed laser Deposition
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 246~250
ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).
Effect of the Neighboring Tape′s AC Currents on Transport Current Loss of a Bi-2223 Tape
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 251~256
Bi-2223 tapes have been developed for low-field power applications at liquid nitrogen temperature. When the Bi-2223 tapes are used in an application such as a power transmission cable or a power transformer, they are supplied with an AC transport current simultaneously. AC loss taking into account such real applications is a crucial issue for power applications fo the Bi-2223 tapes to be feasible. In this paper, the transport losses for different AC current levels and arrangements of the neighboring tapes have been measured in a 1./5 m long Bi-2223 tape. The significant increase of the transport losses due to neighboring tape's AC currents is observed. An increase of the transport losses caused by a decrease of the Bi-2223 tape's critical current is a minor effect. The measured trasprot losses could not be explained by a dynamic resistance loss based on DC voltage-current characteristics in combination with the neighboring tape's AC currents.The trasport losses do not depend on the frequency of the neighboring tape's AC currents but is arrangements in the range of small current especially.
Magnetic Properties of La-doped YIG Films Prepared by LPE(Liquid Phase Epitaxy)
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 3, 2001, Pages 257~262
Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.