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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
Journal Basic Information
Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
Editor in Chief :
Volume & Issues
Volume 14, Issue 12 - Dec 2001
Volume 14, Issue 11 - Nov 2001
Volume 14, Issue 10 - Oct 2001
Volume 14, Issue 9 - Sep 2001
Volume 14, Issue 8 - Aug 2001
Volume 14, Issue 7 - Jul 2001
Volume 14, Issue 6 - May 2001
Volume 14, Issue 5 - May 2001
Volume 14, Issue 4 - Apr 2001
Volume 14, Issue 3 - Mar 2001
Volume 14, Issue 2 - Feb 2001
Volume 14, Issue 1 - Jan 2001
Volume 12, Issue 4 - 00 2001
Selecting the target year
Growth and Characterization of
Single Crystal Thin Film by Hot Wall Epitaxy
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 445~454
The stochiometric mix of evaporating materials for the CuInSe
single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe
mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62
, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe
single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10
/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe
single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe
single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D
,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.
Characteristics of Piezoelectric and dielectric of PMWN-PZT Ceramics
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 455~459
In this paper, the dielectric and pizoelectric properties of 0.05Pb(M
, are investigated as a function of the mole ratio of Zr and the amount of N
. Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient(
), relative dielectric constant (
), piezoelectric stain constrain (
and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ;
=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N
is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35
A Study on the Structural and Dielectric Properties of (Ba,Sr,Ca)
with Sintering Conditions
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 460~465
(x=1.10,0.15,0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of he composition ratio and sintering temperature were studied. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around 102
due to the formation of the polycrystalline perovskite phase. The BSCT(50/40/10) specimen sintered at 150
showed the highest average grain size(18.25
). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 145
, were about 4324 and 0.972% at 1KHz, respectively.ively.
Interfacial Effects and Dielectric Properties of 22kV XLPE Sheets
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 466~469
In this paper, we evaluated the dielectric properties of XLPE sheet of 22kV power cable, XLPE/semiconductor and XLPE/water/semiconductor depended on electric field and temperature respectively. Dielectric properties and temperature dependency of XLPE sheet of 22kV power cable increase greatly with as temperature increase and have no effect on applied voltage. And we confirmed that tan
values in the samples with semiconductor or water layers were higher than those in the samples without them.
The Fabrication of Chromium Nitride Thin-Film Type Pressure Sensors for High Pressure Application and Its Characteristics
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 470~474
This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N
). The optimized condition of CrN thin-film sensing elements was thickness range of 3500
and annealing condition(300
, 3 hr) in Ar-10%N
deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65
Ωcm, a low temperature coefficient of resistance, TCR=186ppm/
and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.
Crystallization and conductivity of CuO--
Glasses for Solid State Eletrolyte
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 475~480
Glasses in he system CuO-P
were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10
/ at room temperature ,but the conductivities of the glass-ceramics were 10
/ increased by 10
order. The crystalline product in the glass-ceramics was CuV
. the crystal growth of CuV
phase increased with heat-treatment conditions. The linear relationship between il(
T) and T
suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.
A Study on the ZnO Thin Film SAW Filter by RF Sputter
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 481~486
ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O
.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.
Residual DC Voltage Property in the In-plane Switching Cell Using the Voltage-transmittance Hysteresis Method
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 487~490
Residual DC voltage of the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method was studied. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.
Magnetic Field Sensor by Using Magnetic Effect in YBaCO Superconductor
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 491~498
The relationship between electrical properties of YBaCuO superconductor and externally applied magnetic field was studied to develop a magnetic field apolarity sensor. The electrical resistance of the superconductor was increased by applying external magnetic field and even after removal of the magnetic field. The behavior was related to the magnetic flux trapped in the superconductor, which penetrates through the materials by the external magnetic field. Some portion of the superconductor was changed to a normal state by the trapped magnetic flux. The appearance of the normal state yielded to enhance the electrical resistance. Electrical characteristics of the superconductor with trapped magnetic flux were extremely sensitive to the external magnetic field and showed different responses depending on the direction of the magnetic field. Considering the observed properties of the superconductor with trapped magnetic flux, a magnetic sensor was fabricated to detect simultaneously both the intensity and the direction of the magnetic field.
A Study of Texture Through the Depth of Core for BSCCO Superconductor Tape with Pole Figure Analysis
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 499~504
We evaluated the degree of texture through depth of the superconductor core of Bi-Sr-Ca-Cu-O(BSCCO) superconductor tape. The degree of texture was characterized by pole figure analysis indicating that the degree of texture varied significantly with depth of the superconductor core. It was observed that the degree of texture was higher near the interface than inside the superconductor core. Specifically, as getting near to the center from the sheath/core interface, the orientation of BSCCO became dispersed from normal direction(ND) which, in turn, resulted in the degradation of <001>-fiber texture. In addition, the <001> texture was non-uniform an, better texture was developed along rolling direction(RD), compared to transverse direction(TD). Microstructural investigation showed that grain alignment was locally degraded by the existence of second phases. I was observed that larger grain size and better texturing were developed near the relatively straight interface compared to those inside the superconducting core. Based on our study, the region near the interface is thought to carry significant current compared to that inside the core.
Current Limiting Characteristics of a Resistive SFCL for a Single-line-to-ground Fault in the 22.9 kV System
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 505~510
We simulated the current limiting characteristics of a resistive superconducting fault current limiter (SFCL) for a single line-to-ground fault in the 22.9 kV system. The transient current during the fault increased to 6.33 kA, 5.80 kA and 3.71 kA without SFCL at the fault angles 0
, respectively, a resistive SFCL limited effectively the fault current to 2.27 kA in a half cycle without any DC components. The maximum quench resistance of an SFCL, 16Ω was suggested to be appropriate to limit the fault current in the 22.9 kV distribution system, considering the operating cooperation of a protective relay and the current limiting performance of an SFCL.
A Study on Joining Method of BSCCO(223) Multifilamentary Tape
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 511~517
We evaluated the electrical properties of 37 multifilamentary jointed tapes processed by superconducting joint. In the superconducting joining method, a lap-joint was used. Tapes were selectively etched, and exposed superconducting cores of the two tapes were brought into contact with each other and then only the joined region was uniaxially pressed in the range of 1,000 to 2,50 MPa. The critical current ratio(CCR) and n-value of the jointed tape were evaluated as a function of uniaxial pressure and number of step in the contacting region. It was observed that the CCR was dependent on the number of step, but almost independent of uniaxial pressure. The highest critical current ratio and n-value were obtained to be 58% and 26%, respectively, for the jointed tape to the tape itself.
Characterization of the Spiral Type Fault Current Limiters Using High-
Superconducting Thin Films
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 518~524
We report the current limiting properties of superconducting fault current limiters (SFCL). Our SFCL was patterned in a spiral type on a YB
(YBCO) film deposited using rf sputtering techniques and was coated with a gold shunt layer in order to disperse the heat generated at hot spots in the YBCO film. Current increased up to 13.5
at 60 Hz for the voltage of 13
, which is the minimum quench point, and increased up to 17.6
at 60 Hz fo the voltage fo 141.4
. The quench completion time was 5 msec at 13
and 4 msec at 141.
respectively. we think that this architecture using spiral-type SFCL can be useful for the protection of the power delivery systems from fault currents.s. currents.s.
Electrical Characteristic of Blend with LLDPE and EVA Due to Mixing Ratio
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 14, issue 6, 2001, Pages 525~532
In this paper, physical properties and electrical characteristics of linear low density polyethylene(LLDPE) films blended with ethylene vinyl acetate(EVA), containing polar groups within it, were investigated to improve defects of polyethylene(PE) such like space charge accumulation and tree growth. Blending method changes super-structure of LLDPE, having a great influence on electrical characteristics. For analysis of physical properties, FTIR, XRD and DSC methods were executed, and for electrical characteristics, volume resistivity and dielectric strength were measured with the varying temperature. From the results, it is confirmed that bled specimens tend to be safe to varying temperature, and specially of 70:30 and 50:50 have a good performance.