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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 18, Issue 12 - Dec 2005
Volume 18, Issue 11 - Nov 2005
Volume 18, Issue 10 - Oct 2005
Volume 18, Issue 9 - Sep 2005
Volume 18, Issue 8 - Aug 2005
Volume 18, Issue 7 - Jul 2005
Volume 18, Issue 6 - Jun 2005
Volume 18, Issue 5 - May 2005
Volume 18, Issue 4 - Apr 2005
Volume 18, Issue 3 - Mar 2005
Volume 18, Issue 2 - Feb 2005
Volume 18, Issue 1 - Jan 2005
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Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
Shim, K.H ; Kim, S.H ; Song, Y.J ; Lee, N.E ; Lim, J.W ; Kang, J.Y ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 285~296
DOI : 10.4313/JKEM.2005.18.4.285
Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.
CMP Properties of Oxide Film with Various Pad Conditioning Temperatures
Choi, Gwon-Woo ; Kim, Nam-Hoon ; Seo, Yong-Jin ; Lee, Woo-Sun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 297~302
DOI : 10.4313/JKEM.2005.18.4.297
Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.
Electrochemical Corrosion and Chemical Mechanical Polishing(CMP) Characteristics of Tungsten Film using Mixed Oxidizer
Na, Eun-Young ; Seo, Yong-Jin ; Lee, Woo-Sun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 303~308
DOI : 10.4313/JKEM.2005.18.4.303
In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.
Design of 13.56 MHz RFID Tag IC
Youn, Nam-Won ; Kwon, Young-Jun ; Shin, Bong-Jo ; Park, Keun-Hyung ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 309~312
DOI : 10.4313/JKEM.2005.18.4.309
The RFID tag IC has been presently abstracting great attention in the world because it can be one of the important sensor elements in the ubiquitous sense network in the future. The 125 kHz and 13.56 MHz RFID tag IC's have already been developed and now widely used in the world and the UHF band tag IC is under development. Domestically, the development of the 125 kHz tag IC was reported before, but there has been no report about the development of the 13.56 MHz tag IC up to now. In this paper, the results of the design, fabrication and measurement of a 13.56 MHz tag IC are discussed. The digital and the analog circuits for the chip were designed and the chip was fabricated using 0.35 ㎛ standard CMOS technology and measured with a separately prepared reader. It was found from the measurement results that it operated properly within 8 cm range of the reader.
A Study on the Characteristics of Stick-slip Friction in CMP
Lee, Hyunseop ; Park, Boumyoung ; Seo, Heondeok ; Park, Kihyun ; Jeong, Haedo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 313~320
DOI : 10.4313/JKEM.2005.18.4.313
Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.
Fixed Abrasive Pad with Self-conditioning in CMP Process
Park, Boumyoung ; Lee, Hyunseop ; Park, Kihyun ; Seo, Heondeok ; Jeong, Haedo ; Kim, Hoyoun ; Kim, Hyoungjae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 321~326
DOI : 10.4313/JKEM.2005.18.4.321
Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.
Effect of the Hydrogen Annealing on the Pb(Zr
Film using (Pb
Lee, Eun-Sun ; Li, Dong-Hua ; Chung, Hyun-Woo ; Lim, Sung-Hoon ; Lee, Sang-Yeol ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 327~329
DOI : 10.4313/JKEM.2005.18.4.327
Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃(PZT) thin films were deposited by using a pulsed laser deposition method on a Pt/Ti/SiO₂/Si substrate with (Pb/sub 0.72/La/sub 0.28/)Ti/sub 0.93/O₃ (PLT) buffer and on a Pt/Ti/SiO₂/Si substrate without buffer. These films were annealed in H₂-contained ambient for 30 minutes at the substrate temperature of 400。C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that ferroelectric properties, such as remanent polarization didn't change in the case of PLT buffered PZT film while remanent polarization value of PZT film degraded from 20.8 C/㎠ to 7.3 C/㎠. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10/sup -6/ order of A/㎠. This is mainly because the hydrogen atoms which make the degradation of PZT films cannot infiltrate into the more -oriented PZT film as well as the less-oriented PZT film.
Effects of the Transition Metal Oxides Substituted for Mg on the Electrical Conductivity of La
Park, Sang-Hyoun ; Yoo, Kwang-Soo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 330~337
DOI : 10.4313/JKEM.2005.18.4.330
La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.
Effects of (100) Orientation of LaNiO
on the Growth and Ferroelectric Properties of Pb(Zr,Ti)O
Park, Min-Seok ; Seo, Byung-Joon ; Yoo, Young-Bae ; Moon, Byung-Kee ; Son, Se-Mo ; Chung, Su-Tae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 338~343
DOI : 10.4313/JKEM.2005.18.4.338
Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.
Electrical and Optical Characteristics of Plasma Display Panel Fabricated by Vacuum In-line Sealing
Park, Sung-Hyun ; Lee, Neung-Hun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 344~349
DOI : 10.4313/JKEM.2005.18.4.344
The optical and electrical characteristics of plasma display panel(PDP) using the vacuum in-line sealing technology compared with the conventional sealing process in this research. This PDP consisted of MgO protecting layer by e-beam evaporation and battier rib, transparent dielectric layer, dielectric layer, and electrodes by screen printer and then sealed off on Ne-Xe(4 ％) 400 Torr and 430。C. The brightness and luminous efficiency were good as the base vacuum level was higher, and it was to check the advantage of high vacuum level sealing, one of the strong points of the vacuum in-line sealing process. However, the brightness and luminous efficiency was dropped sharply because of a crack on MgO protecting layer by the difference of the expansion and contraction stress on high temperature in the vacuum states between MgO and substrate. Fortunately, the crack was prevented by MgO was deposited on higher temperature than 300。C. Finally, the PDP, was fabricated by the vacuum in-line sealing process, resulted the lower brightness than processing only the thermal annealing treatment in the vacuum chamber, but the luminous efficiency was increased by the reducing power consumption with the decreasing luminous current. The vacuum in-line sealing technology was not to need the additional thermal annealing process and could reduce the fabrication process and bring the excellent optical and electrical properties without the crack of MgO protecting layer than the conventional sealing process.
Study of Space Charge of Metal/copper(Ⅱ)-phthalocyanine Interface
Park, Mie-Hwa ; Yoo, Hyun-Jun ; Yoo, HyungKun ; Na, Seunguk ; Kim, Sonshui ; Lee, Kie-Jin ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 350~356
DOI : 10.4313/JKEM.2005.18.4.350
We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.
Structure and Characteristics of Tandem Solar Cell Composed of Dye-sensitized Solar Cell and Thermoelectric Generator
Lee, Dong-Yoon ; Song, Jae-Sung ; Lee, Won-Jae ; Kim, In-Sung ; Jeong, Soon-Jong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 357~362
DOI : 10.4313/JKEM.2005.18.4.357
The tandem solar cell composed of a dye-sensitized solar cell (DSC) and a thermoelectric generator (TEG) was designed. In such new cell, the characteristics of DSC and TEG were investigated. DSC uses the wavelength range of 380∼750 nm and has the maximum efficiency of below 10 ％. If the solar light transmitted through DSC can be converted to heat energy, TEG can generate electric energy using this heat energy. By this means, it is possible to utilize most of solar energy in the wavelength range of 350∼3000 nm for electric generation and it can be expected to obtain higher solar energy conversion efficiency exceeding the known limit of maximum efficiency. For this purpose we suggest the tandem solar cell constructed with DSC and TEG. In this structure, DSC has a carbon nanotube film as a counter electrode of DSC in order to collect the solar light and convert it to heat energy. We measured the I-V characteristics of DSC and TEG, assembled to the tandem cell. As a result, it was shown that DSC with carbon nanotube and TEG had the efficiency of 9.1 ％ and 6.2 ％, respectively. From this results, it is expected that the tandem solar cell of the new design has the possibility of enhanced conversion efficiency to exceed above 15 ％.
Comparison of Operating Characteristics between Flux-lock Type and Resistive Type Superconducting Fault Current Limiters
Park, Hyoung-Min ; Lim, Sung-Hun ; Park, Chung-Ryul ; Chol, Hyo-Sang ; Han, Byoung-Sung ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 363~369
DOI : 10.4313/JKEM.2005.18.4.363
we compared the operating characteristics between flux-lock type and resistive type superconducting fault current limiters(SFCLs). Flux-lock type SFCL consists of two coils, which are wound in parallel each other through an iron core, and a high-Tc superconducting(HTSC) element is connected with coil 2 in series. The the flux-lock type SFCL can be divided into the subtractive polarity winding and the additive polarity winding operations according to the winding directions between the coil 1 and coil 2. It was confirmed from experiments that flux-lock type SFCL could improve both the quench characteristics and the transport capacity compared to the resistive type SFCL, which means, the independent operation of HTSC element.
AC Loss Characteristic in the Fault Current Limiting Elements of a Coil Type
Ryu, Kyung-Woo ; Ma, Yong-Ho ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 370~374
DOI : 10.4313/JKEM.2005.18.4.370
AC loss of a superconducting conductor has a strong influence on the economic viability of a superconducting fault current limiter, which offers an attractive means to limit short circuit current in power systems. Therefore, the AC loss characteristics in several fault current limiting elements of a coil type have been investigated experimentally. The test result shows that AC losses measured in the fault current limiting elements depend on arrangement of a voltage lead. The AC loss of a bifilar coil is smallest among the fault current limiting elements of the coil type. The measured AC loss of the bifilar coil is much smaller than that calculated from Norris's elliptical model. However, the loss measured in a meander, which is frequently used in a resistive fault current limiter, agrees well to the theoretical one.
The Character of Electron Ionization and Attachment Coefficients in Perfluoropropane(C
) Molecular Gas by the Boltzmann Equation
Song, Byoung-Doo ; Jeon, Byoung-Hoon ; Ha, Sung-Chul ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 375~380
DOI : 10.4313/JKEM.2005.18.4.375
CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.
Measurement of Ar Temperature of Hollow Cathode Discharge Plasma
Lee, Jun-Hoi ; Shin, Jae-Soo ; Lee, Sung-Jik ; Lee, Min-Soo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 18, issue 4, 2005, Pages 381~385
DOI : 10.4313/JKEM.2005.18.4.381
The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.