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Journal of the Korean Institute of Electrical and Electronic Material Engineers
Journal Basic Information
pISSN :
1226-7945
eISSN :
2288-3258
Journal DOI :
10.4313/JKEM
Frequency :
Others
Publisher:
The Korean Institute of Electrical and Electronic Material Engineers
Editor in Chief :
Jae-Hyeong Lee
Volume & Issues
Volume 27, Issue 12 - Dec 2014
Volume 27, Issue 11 - Nov 2014
Volume 27, Issue 10 - Oct 2014
Volume 27, Issue 9 - Sep 2014
Volume 27, Issue 8 - Aug 2014
Volume 27, Issue 7 - Jul 2014
Volume 27, Issue 6 - Jun 2014
Volume 27, Issue 5 - May 2014
Volume 27, Issue 4 - Apr 2014
Volume 27, Issue 3 - Mar 2014
Volume 27, Issue 2 - Feb 2014
Volume 27, Issue 1 - Jan 2014
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1
Optical Properties of Semiconductors Depending on the Contact Characteristic Between Different Groups
Oh, Teresa ; Nho, Jong Ku ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 71~75
DOI : 10.4313/JKEM.2014.27.2.71
Abstract
To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.
2
Unified Dual-Gate Phase Change RAM (PCRAM) with Phase Change Memory and Capacitor-Less DRAM
Kim, Jooyeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 76~80
DOI : 10.4313/JKEM.2014.27.2.76
Abstract
Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor.
changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with
. Current sensing margin of DRAM is 3
. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.
3
Improved Uniformity of Resistive Switching Characteristics in Ag/HfO
2
/Pt ReRAM Device by Microwave Irradiation Treatment
Kim, Jang-Han ; Nam, Ki-Hyun ; Chung, Hong-Bay ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 81~84
DOI : 10.4313/JKEM.2014.27.2.81
Abstract
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on
thin films have been demonstrated by using Ag/
/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with
thin films as a transition layer. Compared to the as-deposited Ag/
/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/
/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (>
sec) were achieved.
4
Printing Properties of Ag Paste with the Variation of Binder on the SiN
x
Coated Si Wafer
Kang, Jea Won ; Shin, Hyo Soon ; Yeo, Dong Hun ; Jeong, Dae Yong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 85~90
DOI : 10.4313/JKEM.2014.27.2.85
Abstract
Ag paste has been used in the front electrode of the Si-solar cell. It is composed by Ag powder, glass frit, binder, solvent and dispersant. The role of the binder and the solvent is to make a flow and a printing property. However, it was not enough to report the printing properties with the variation of binder in the controled viscosity. In this study, we selected 3 kinds of typical binder which were used as binder for the paste in the industry, such as Ethyl cellulose, Hydroxypropyl cellulose and Acrylic. Ag pastes using these were prepared, controled viscosity and printed on the SiNx coated Si wafer. In the `A paste` used Acrylic binder, printed hight was highest and `H paste` used Hydroxypropyl cellulose binder was lowest. Because `H paste` was high viscosity due to the molecular weight, the solvent was added in the paste to control the viscosity. Therefore, the content of solid was lower in `H paste`. The relative pattern width which is related to the spreading of paste was the best in the case of `H paste` and `EH paste` at
. It is thought that the optimization of the relative pattern width is possible for a paste by the controling shear thinning phenomenon. In the case of `A paste`, though printing hight was best, the pattern width was dependant on the temperature.
5
Molding and Evaluation of Ultra-Precision Chalcogenide-Glass Lens for Thermal Imaging Camera Using Thermal Deformation Compensation
Cha, Du Hwan ; Kim, Jeong-Ho ; Kim, Hye-Jeong ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 91~96
DOI : 10.4313/JKEM.2014.27.2.91
Abstract
Aspheric lenses used in the thermal imaging are typically fabricated using expensive single-crystal materials (Ge and ZnS, etc.) by the costly single point diamond turning (SPDT) process. As a potential solution to reduce cost, compression molding method using chalcogenide glass has been attracted to fabricate IR optic. Thermal deformation of a molded lens should be compensated to fabricate chalcogenide aspheric lens with form accuracy of the submicron-order. The thermal deformation phenomenon of molded lens was analyzed ant then compensation using mold iteration process is followed to fabricate the high accuracy optic. Consequently, it is obvious that compensation of thermal deformation is critical and useful enough to be adopted to fabricate the lens by molding method.
6
Phase Transition Properties of Ferroelectric Polymer Films
Park, Chul-Woo ; Jung, Chi-Sup ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 97~103
DOI : 10.4313/JKEM.2014.27.2.97
Abstract
Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at
on heating and paraelectric phase to ferroelectric phase at
on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.
7
Emission Characteristics of Fluorescent OLED with Alternating Current Power Source Driving Method
Seo, Jung-Hyun ; Kim, Ji-Hyun ; Ju, Sung-Hoo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 104~109
DOI : 10.4313/JKEM.2014.27.2.104
Abstract
To operate organic light emitting device (OLED) with alternating current (AC) power source without AC/DC(direct current) converter, we fabricated the fluorescent OLED and measured the emission characteristics with AC and DC. The OLED operated by AC showed higher maximum current efficiency of 8.2 cd/A and maximum power efficiency of 8.3 lm/W. But current efficiency and power efficiency of AC driven OLED showed worse than DC driven OLED at high voltage above 10 V. This result can be explained by the peak voltage of AC was
times than DC, In case of low driving voltage the emission characteristics were improved by the peak voltage of AC, but in case of high driving voltage the emission efficiencies were decreased by the roll off phenomena. Finally, serial OLED arrays using twelve OLEDs driven by AC 110 V showed average voltage of 9.17 V, voltage uniformity of 99.0%, average luminance of
, luminance uniformity of 94.4%.
8
Fast Switching Properties of TN Cell With Graphene Quantum Dots
Kim, Dai-Hyun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 110~114
DOI : 10.4313/JKEM.2014.27.2.110
Abstract
In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.
9
DSSCs Efficiencies of Photo Electrode Thickness and Modified Photo Electrode Surface Area
Kwon, Sung-Yeol ; Yang, Wook ; Zhou, Ze-Yuan ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 115~120
DOI : 10.4313/JKEM.2014.27.2.115
Abstract
Photo electrode is an important component for DSSC. DSSCs electrical characteristics and efficiencies fabricated with different
photo electrodes thickness and modified phoro electrode surface area were studied.
photo electrode shows a 4.956% efficiency. The highest short circuit current density was a
. Efficiencies and short circuit current density increased as tape casting thickness decreased. Modified surface area of the photo electrode by needle stamp processing were studied. 200 times needle stamp processing on photo electrodes shows a highest 5.168% efficiency. Also the short circuit current density was a
.
10
Organic Solar Cells with CuO Nanoparticles Mixed PEDOT:PSS Buffer Layer
Oh, Sang Hoon ; Heo, Seung Jin ; Kim, Hyun Jae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 121~125
DOI : 10.4313/JKEM.2014.27.2.121
Abstract
In this research, nanocomposite layers consisting of poly (3,4,-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) and CuO nanoparticles were investigated as hole transport layers in organic solar cells based on poly (3-hexylthiophene) (P3HT) as the electron donor and (6.6) phenyl-C61-butyric acid methyl ester (PCBM) as the electron acceptor. The addition of CuO nanoparticles to PEDOT:PSS layer improved the solar cell performance with 0.5% CuO nanoparticle concentration. At optimized concentration, CuO mixed PEDOT:PSS films had good electrical (
) and optical (transmittance > 90%) properties for using hole transporting layer. We investigated that improved solar cell performance with CuO nanoparticles mixed PEDOT:PSS films.
11
Development and Evaluation of LED Lamp with Rectangular Light Distribution for Growth of Plant
Yun, Jung-Hyun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 126~131
DOI : 10.4313/JKEM.2014.27.2.126
Abstract
In this paper, plant crops used in the region to grow crops for the LED lighting area of a rectangle to fit the light distribution to maximize the efficiency of a rectangular distribution was made of LED lights. After the fabrication of LED lamps, light distribution, and in the area of
was the analysis of Illuminance chart. As a result of examining the performance light distribution for total Emin/Eav is 56%, and the target area of the light distribution compared to normal lamps Emin/Eav is improved by about 17%. In addition, plants grown in the area to minimize the outgoing light distribution can be focused on the cultivation area, according to the distance of the plants and be able to have the best luminous efficacy is judged.
12
Surface and Electrical Properties of Sr Based Thin Film with Annealing Temperature
Choi, Woon-Sik ; Jo, Choon-Nam ; Kim, Jin-Sa ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 2, 2014, Pages 132~135
DOI : 10.4313/JKEM.2014.27.2.132
Abstract
The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at
using RTA. The surface roughness showed about 2.4 nm in annealed thin film at
. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of
was obtained by annealing temperature at
. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10~+10 V. The leakage current density of annealing temperature of
was the
at applied voltage of -5~+5 V.