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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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Journal DOI :
The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 27, Issue 12 - Dec 2014
Volume 27, Issue 11 - Nov 2014
Volume 27, Issue 10 - Oct 2014
Volume 27, Issue 9 - Sep 2014
Volume 27, Issue 8 - Aug 2014
Volume 27, Issue 7 - Jul 2014
Volume 27, Issue 6 - Jun 2014
Volume 27, Issue 5 - May 2014
Volume 27, Issue 4 - Apr 2014
Volume 27, Issue 3 - Mar 2014
Volume 27, Issue 2 - Feb 2014
Volume 27, Issue 1 - Jan 2014
Selecting the target year
Characterization of Backside Passivation Process for Through Silicon via Wafer
Kang, Dong Hyun ; Gu, Jung Mo ; Ko, Young-Don ; Hong, Sang Jeen ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 137~140
DOI : 10.4313/JKEM.2014.27.3.137
With the recent advent of through silicon via (TSV) technology, wafer level-TSV interconnection become feasible in high volume manufacturing. To increase the manufacturing productivity, it is required to develop equipment for backside passivation layer deposition for TSV wafer bonding process with high deposition rate and low film stress. In this research, we investigated the relationship between process parameters and the induced wafer stress of PECVD silicon nitride film on 300 mm wafers employing statistical and artificial intelligence modeling. We found that the film stress increases with increased RF power, but the pressure has inversely proportional to the stress. It is also observed that no significant stress change is observed when the gas flow rate is low.
Tubular-shaped ZnO Crystals by Thermal Evaporation Technique in Air
Lee, Jung-Hun ; Lee, Geun-Hyoung ; Nahm, Choon-Woo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 141~145
DOI : 10.4313/JKEM.2014.27.3.141
Tubular-shaped ZnO crystals were synthesized by thermal evaporation technique under air atmosphere. Mixture of Zn and Mg powder was used as the source material. The thermal evaporation and oxidation of Zn/Mg mixture were carried out for 1 hr at
under in air under atmospheric pressure. When only Zn powder was used as a source material, tetrapod-shaped ZnO crystals were synthesized. This provides that Mg played a key role in the formation of the tubular-shaped crystals. SEM images showed that the tubular-shaped ZnO crystals grew along  direction. XRD spectrum revealed that the ZnO tubes had hexagonal wurtzite structure. Two emission peaks at 380 nm and 510 nm were observed in the room temperature cathodoluminescence spectrum.
Laser Direct Etching on Transparent Conductive Oxide Films Sputtered on Polycarbonate Substrates
Lee, Jeongmin ; Kwon, Sang Jik ; Cho, Eou Sik ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 146~150
DOI : 10.4313/JKEM.2014.27.3.146
As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different
laser beam conditions.
Electrical and Optical Characteristics of QD-LEDs Using InP/ZnSe/ZnS Quantum Dot
Choi, Jae-Geon ; Moon, Dae-Gyu ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 151~155
DOI : 10.4313/JKEM.2014.27.3.151
We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.
Optical Characteristics of Plamonic Waveguide Using Tapered Structure
Kim, Doo Gun ; Kim, Hong-Seung ; Oh, Geum-Yoon ; Kim, Seon-Hoon ; Ki, Hyun-Chul ; Kim, Tae-Un ; Kim, Hwe Jong ; Ma, Ping ; Hafner, Christian ; Choi, Young-Wan ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 156~161
DOI : 10.4313/JKEM.2014.27.3.156
We have investigated the optical properties of plamonic waveguide with tapered structure based on InP material for photonic integrated circuit(PIC). The proposed plasmonic waveguide is covered with the Ag thin film to generate the plasmonic wave on metallic interface. The optical characteristics of plasmonic waveguide were calculated using the three-dimensional finite-difference time-domain method. The plasmonic waveguide was fabricated with the lengths of 2 to
and the widths of 400 to 700 nm, respectively. The plasmonic mode and optical loss were measured. The optimum plasmonic length is
and widths are 600 and 700 nm in the fabricated waveguide. This plasmonic waveguide can be directly integrated with other conventional optical devices and can be essential building blocks of PIC.
Optical Analysis for the Autostereoscopic Display with a Lenticular Array Using Finite Ray Tracing
Kim, Bong-Sik ; Kim, Keon-Woo ; Choi, Da-Shin ; Park, Woo-Sang ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 162~166
DOI : 10.4313/JKEM.2014.27.3.162
We propose an analysis method of an autostereoscopic display system with lenticular lens array using finite ray-tracing method that is verified by the geometrical optics. In the present work, we adopt the cylinder equation for the mathematical expression of the lenticular lens. For the calculation of the direction cosine of the transmitted ray, we first calculate the refracting point at bottom of the lens and the direction cosine of the incident ray that propagating through the lens by the Snell`s law, and then apply to finite ray-tracing method. Finally, we obtain the simulation results for the intensity distribution of the ray at optimal viewing distance. From these results, we confirm the realization of 3D image that exists separately according to the viewing position at an optimal viewing distance.
A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate
Bang, Jeong-Ju ; Huh, Chang-Su ; Lee, Jong-Won ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 167~171
DOI : 10.4313/JKEM.2014.27.3.167
This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.
Analysis of SF
Pressure Characteristic of Spark Gap According to Simulation
Choi, Sun-Ho ; Lee, Tae-Woo ; Bang, Jeong-Ju ; Huh, Chang-Su ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 172~177
DOI : 10.4313/JKEM.2014.27.3.172
Industrial, medical, environment and agriculture application of pulse power technology have been developing rapidly in many field. In order to make use in the form of pulses is applied to the pulse forming technique. At this time, spark gap is generally used for the pulse forming. Spark gap may be possible to simulate the shape of the electrode, to know the uniform or non-uniform electric field of the electrode structure. Further, it can be determined using Paschen`s law applied pressure of the insulating gas in accordance with the voltage which is created using the value of the electric field. In this paper, we tried to found using a formula and the simulation process to determine the pressure. The value of the electric field is different according to the shape of the electrode. So, the range of pressure applied also varies. In order to withstand the 100 kV with a gap of 5 mm, the nitrogen gas must be applied to about 7 bar in the electrode structure. On the other hand, in the same conditions, Sulfur hexafluoride gas must be applied to about 2 bar. Consequently, the Sulfur hexafluoride gas has a higher insulation properties than nitrogen gas may be applied to low pressure at the same conditions.
Synthesis and Characteristics of Type-II ZnO/ZnSe Core/Shell Heterostructures for High Efficient Photocatalytic Activity
Lee, Woo-Hyoung ; Choi, Kwang-Il ; Kang, Dong-Cheon ; Beak, Su-Woong ; Lee, Suk-Ho ; Lim, Cheol-Hyun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 178~183
DOI : 10.4313/JKEM.2014.27.3.178
Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.
Low Dimensional Electro-optic Properties of Ferroelectric Polymer Films
Park, Chul-Woo ; Jung, Chi-Sup ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 184~188
DOI : 10.4313/JKEM.2014.27.3.184
The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.
Characterization of Low-temperature Conductive Films Bonded PV Modules and Its Field Test
Baek, Su-Wung ; Choi, Kwang-Il ; Lee, Suk-Ho ; Cheon, Chan-Hyuk ; Hong, Seung-Min ; Lee, Kil-Song ; Shin, Hyun-Woo ; Yang, Yeon-Won ; Lim, Cheol-Hyun ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 189~194
DOI : 10.4313/JKEM.2014.27.3.189
In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.
Measurement of Optical Properties of a Liquid Based on a Side-polished Optical Fiber
Lee, Hyeon Jin ; Kim, Kwang Taek ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, issue 3, 2014, Pages 195~198
DOI : 10.4313/JKEM.2014.27.3.195
In this paper, a measurement method to obtain the optical properties of a liquid base on a side-polished single mode fiber was proposed and demonstrated. The device showed periodic resonance coupling against wavelengths. The refractive index and dispersion characteristics of a liquid were calculated by use of the spacings of periodic resonance wavelengths of the device. The thermo-optic coefficient of the liquid was obtained by monitering the shift of resonance wavelengths of the devices with change of environmental temperature.