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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Institute of Electrical and Electronic Material Engineers
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The Korean Institute of Electrical and Electronic Material Engineers
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Volume & Issues
Volume 29, Issue 9 - Sep 2016
Volume 29, Issue 8 - Aug 2016
Volume 29, Issue 7 - Jul 2016
Volume 29, Issue 6 - Jun 2016
Volume 29, Issue 5 - May 2016
Volume 29, Issue 4 - Apr 2016
Volume 29, Issue 3 - Mar 2016
Volume 29, Issue 2 - Feb 2016
Volume 29, Issue 1 - Jan 2016
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Analysis of The Electrical Characteristics of Power MOSFET with Floating Island
Kang, Ey Goo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 199~204
DOI : 10.4313/JKEM.2016.29.4.199
This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was
. The doping concentration of floating island was
. And the width of floating island was
. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and
on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.
Microstructure and Piezoelectric Properties of Low Temperature Sintering (Na,K,Li)(Nb,Sb,Ta)O
Lee, Kab-Soo ; Yoo, Ju-Hyun ; Lee, Jie-Young ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 205~209
DOI : 10.4313/JKEM.2016.29.4.205
In this paper, piezoelectric ceramics with the composition of
) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling
, piezoelectric constant
and piezoelectric figure of merit
were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at
for 3 h.
Piezoelectric Properties of Lead-Free (K
Ceramics Added with ZnO and MnO
Hong, Young Hwan ; Park, Young-Seok ; Jeong, Gwang-Hwi ; Cho, Sung Youl ; Lee, Jae-Shin ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 210~214
DOI : 10.4313/JKEM.2016.29.4.210
We investigated the sintering behavior and piezoelectric properties of lead-free
ceramics co-doped with excess 0.01 mol ZnO and x mol
, where x was varied from 0 to 0.03. Excess
addition was found to retard the grain growth and densification during sintering. However, 0.005 mol
addition improved the piezoelectric properties of 0.01 mol ZnO added
ceramics. The planar mode piezoelectric coupling coefficient, electromechanical quality factor, and piezoelectric constant
of 0.01 mol ZnO and 0.005 mol
added specimen were 0.40, 304, and 214 pC/N, respectively.
Effects of Annealing Ambient on the Anti-Pollution and Mechanical Properties of Functional Film Coated on the Ceramic Substrate
Shan, Bowen ; Kang, Hyunil ; Choi, Won Seok ; Joung, Yeun-Ho ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 215~217
DOI : 10.4313/JKEM.2016.29.4.215
For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around
for 10 minutes with different gas ambient, such as
, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle (
) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.
Effect of PEO Process Conditions on Oxidized Surface Properties of Mg alloy, AZ31 and AZ91. I. Applied Voltage and Time
Ham, Jae-Ho ; Jeon, Min-Seok ; Kim, Yong-Nam ; Shin, Min Chul ; Kim, Kwang Youp ; Kim, Bae-Yeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 218~224
DOI : 10.4313/JKEM.2016.29.4.218
The surface of Mg alloy, AZ31 and AZ91, were treated by PEO (plasma electrolytic oxidation) in Na-P system electrolyte, with different applied voltage and time. Thickness, roughness and X-ray crystallographic analysis revealed several results. The more applied time and voltage of PEO treated, the thicker oxidized surface coating layer were covered. And surface roughness increased with the thickness of oxidized layer. It was thought that when oxide layer grew, resistivity and breakdown voltage increased with the thickness of layer, and then, the energy of micro plasma need to be higher then before. So, it made craters and pores of surface become greater, which were responsible for the coarse surface.
Effect of PEO Process Conditions on Oxidized Surface Properties of Mg alloy, AZ31 and AZ91. II. Electrolyte
Ham, Jae-Ho ; Jeon, Min-Seok ; Kim, Yong-Nam ; Shin, Hyun-Gyoo ; Kim, Sung Youp ; Kim, Bae-Yeon ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 225~230
DOI : 10.4313/JKEM.2016.29.4.225
Effect of electrolyte composition and concentration on PEO coating layer were investigated. Mg alloy, Surface of AZ31 and AZ91 were oxidized using PEO with different electrolyte system, Na-P and Na-Si. and applied voltage and concentration. We measured thickness, roughness, X-ray crystallographic analysis and breakdown voltage of the oxidized layer. When increasing concentration of electrolyte, the thickness of oxide layer also increased too. And roughness also increased as concentration of electrolyte increasing. Breakdown voltage of coated layer showed same behavior, the voltage goes high as increasing thickness of coating layer, as increasing concentration of electrolyte, and increasing applied voltage of PEO.
phase were observed as well as MgO.
Effect of Electrode Space on Optical Property in Three-Electrode Type E-paper Display
Lee, Sang-il ; Hong, Youn-Chan ; Kim, Young-cho ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 231~236
DOI : 10.4313/JKEM.2016.29.4.231
A three-electrode type reflective display (electronic paper) is designed to apply an independent electric field to each three electrodes of the cell including two electric-type of particles and electrically neutral color fluid, so single color realization is possible. In particular, the movement of particles and optical properties are decided by the electric field between two electrodes on the lower substrate. So, the effect of electric field by the distance between two electrodes on the lower substrate is studied with electrode spacing with
. By our experimentation, the driving voltage induces more reliable movement of charged particles and the optical properties as compared with the threshold voltage. We ascertain the single color realization and non-inverted particle separation is possible. So the more desirable optical properties are observed in case of the short electrode like
Fabrication Of Ultraviolet LED Light Source Module Of Current Limiting Diode Circuit By Using Flip Chip Micro Soldering
Park, Jong-Min ; Yu, Soon Jae ; Kawan, Anil ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 237~240
DOI : 10.4313/JKEM.2016.29.4.237
The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was
and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was
were used with contact pads of
size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of
, whereas irradiation was measured to be
. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.
The Effect of in situ Ultraviolet Irradiation on the Chemical Vapor Deposited ZnO Thin Films
Kim, Bo-Seok ; Baik, Seung Jae ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 241~246
DOI : 10.4313/JKEM.2016.29.4.241
ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.
A Study on the Color Granite Fabrication by Bias Enhancement Method
Park, Jong Kug ; Shin, Hong-Jik ; Choi, Won Seok ; Han, Jae Chan ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 247~249
DOI : 10.4313/JKEM.2016.29.4.247
In this study, we investigated the color change of the normal light gray granite as the high value color granite. By coating the metal catalyst liquid on the surface of granite stone, the metal particles were penetrated into the granite and the color of granite was changed permanently through the annealing treatment. To increase penetration depth into the granite, we used DC (direct current) bias. Two kinds of bias were used such as DC bias and pulse DC bias. And the penetration time was changed as 30 and 60 min. In all cases, the color granite were successfully obtained. Regardless of the catalyst reaction time, the penetration depth was increased by using the bias treatment. We obtained a penetration depth of 21 mm with the DC pulse bias during 60 min.
A Study on DC Traction Power Supply System Using PWM Converter
Kim, Joorak ; Park, Chang-Reung ; Park, Kijun ; Kim, Joo-Uk ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 250~254
DOI : 10.4313/JKEM.2016.29.4.250
Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.
Influence of Shell on the Electrochemical Properties of Si Nanoparticle
Lee, Jeong-eun ; Koo, Jeong-boon ; Jang, Bo-yun ; Kim, Sung-Soo ;
Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 29, issue 4, 2016, Pages 255~262
DOI : 10.4313/JKEM.2016.29.4.255
or C shells on electrochemical properties of Si nanoparticles were investigated.
shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively.
shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as
. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.