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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
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Volume & Issues
Volume 10, Issue 4 - Dec 2001
Volume 10, Issue 3 - Oct 2001
Volume 10, Issue 2 - Jul 2001
Volume 10, Issue 1 - Apr 2001
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Molecular Dynamics Study of the Energetic Aluminum Cluster Impact and Deposition
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 283~288
We have investigated aluminum cluster deposition using a classical molecular dynamics simulations. We studied the variations of the cluster momentum and the impulse force during collisions, and found that the close-packed cluster impact has some of properties of the single particle collision and the linear atomic chain collisions. We also simulated the series of energetic cluster deposition with energy Per atom. When energy Per atom in cluster has some eV rather than very low, the intermixing occurred easily in growth film and we can obtain a good film without subsequent annealing process.
-based thin film gas sensors in array for recognizing inflammable gases
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 289~297
thin films were prepared for recognizing and detecting of the inflammable gases, like butane, propane, LPG, carbon monoxide. To obtain sensing films, Sn, Pt/Sn, Au/Sn, and Pt,Au/Sn films were deposited employing a thermal evaporator for Sn film and a sputter for novel metals of Pt or/and Au. These films were annealed for 2 h at
-based thin films. The films showed the tetragonal structure and also exhibited many defects and porosity, which could give high sensitivity to thin films. The thin films showed high sensitivity and reproductivity to the tested gases(butane, propane, LPG, and carbon monoxide) to even to low gas concentrations in range of workplace environmental standards. Especially, Pt/
film showed the highest sensitivity to butane, LPG, and carbon monoxide. And pure
film manifested the highest sensitivity to propane. By using the sensing patterns from the films, we could reliably recognize the kinds and the quantities of the tested inflammable gases within the range of the threshold limit values(TLV) and the lower explosion limit(LEL) through the principal component analysis(PCA).
A study on the RE/DC discharge cleaning for high vacuum SUS chamber
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 298~302
Cleaning effect of RF/DC discharge to clean the surface of vacuum chamber was studied for various discharge conditions. Glow discharge cleaning without baking reduced the outgassing rate to 1/2, which was similar to that after the only baking treatment alone. Glow discharge cleaning treatment with baking improved the cleaning efficiency and then the outgassing rate was remarkably reduced to 1/20. It was found that the ion energy and the ion density were important factors in cleaning the surface. RF discharge cleaning was more effective than BC discharge cleaning.
Consideration on the performance test procedure of a turbomolecular pump and a compound molecular pump
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 303~311
The pumping speed and the maximum compression ratio as well as the critical backing pressure as main parameters representing normal and limiting performance of a turbomolecular pump and a compound molecular pump were measured basing on a draft KS of the acceptance test procedure. Characteristics of the molecular pumps of two different kinds were compared and some points for improving regulations of the test procedure were proposed.
Fabrication and Vacuum Performance Test of the NEG Pump for
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 312~320
A Non-Evaporable Getter(NEG) pump was fabricated using Zr-V-Fe alloy modules to obtain
Pa range pressures. Pumping performances and activation characteristics were investigated and the pumping speeds for hydrogen, deuterium and carbon monoxide gases of the NEG pump were measured. And hydrogen desorption characteristics were examined during activation at
. Futhermore the vacuum performance was compared with those of other high vacuum pumps as turbo-molecular pump, sputter-ion pump, and cryo pump by analyzing the residual gases of the system.
A study of Compositional range of Ti-Si-N films for the ULSI diffusion barrier layer
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 321~327
Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a
gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous
, producing increased film resistivity with increased
flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low
flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.
Characteristics of the NO/
Nitrided Oxide and Reoxidized Nitrided Oxide for NVSM
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 328~334
The characteristics of
nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in
ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with
than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as
chemical bonds, and it is agreed with the distribution of SiN and
species by ToF-SIMS.
Enhancement of photoluminescence and electrical properties of Ga doped ZnO thin film grown on
(0001) single crystal substrate by RE magnetron sputtering through rapid thermal annealing
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 335~340
(1 wt%)-doped ZnO(GZO) thin films were grown on
(0001) by rf magnetron sputtering at
, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-
atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of
carrier concentration and exceptionally high mobility of 60
/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.
Numerical Analysis on the Beat and Mass Transport in Horizontal MOCVD Reactor for the Growth of GaN Epitaxy
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 341~349
Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD(metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactant to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. From the numerical calculation, the concentration of reactants could be qualitatively predicted by the Nusselt number(heat transfer) and the optimum mass flow rate, wall tilt angle and inlet condition were considered.
A study on characteristics of ZnSe epilayer by using surface photovoltage
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 350~355
We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.
Properties of a free-standing diamond wafer deposited by the multi-cathode direct current plasma assisted CVD method
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 356~360
Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950
deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6
and 51.7 ~ 61.9 %, and their uniformity was
9%, respectively. The diamond quality decreased with going from center to edge of the wafer.
Planarization & Polishing of single crystal Si layer by Chemical Mechanical Polishing
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 361~367
Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27
Rms to 0.64
Pd/Si/Ti/Pt Ohmic Contact for Application to AlGaAs/GaAs HBT
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 368~373
Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of
was achieved by rapid thermal annealing at
for 10 seconds. However, the specific contact resistivity decreased remarkably to
/10sec, respectively. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained even at
, therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.
Abnormal behavior in photoluminescence of InAs quantum dots subjected to annealing treatment
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 374~379
We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to
and, then, it was found to be blue-shifted at temperatures ranging from 700 to
. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.
The Design and Construction of the Nuclear Microprobe
Journal of the Korean Vacuum Society, volume 10, issue 3, 2001, Pages 380~386
A nuclear microprobe system with adjustable precision object slits and a magnetic quadrupole doublet was designed by the beam optics simulation using a first order matrix formalism, and installed in a
beam line connected with KIGAM 1.7 MV Tandem VDG Accelerator. Demagnification factors for x and y axis are calculated to be 25 and 4.9, respectively, and a minimum beam spot side is expected to be about 5
for 3 MeV proton beams with a current of about 1 nA. A multi-purpose octagonal target chamber has been built to facilitate MeV ion-beam analytical techniques of PIXE, RBS, ERDA, and ion beam micro-machining. It contains X-ray and particle detectors, a zoom microscope, a Faraday cup, a 4-axis sample manipulator and a high vacuum pumping system. The system performance of the nuclear microprobe is now being tested, and automatic manipulator control and data acquisition system will be installed for routine applications of micro ion-beam analytical techniques.