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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 10, Issue 4 - Dec 2001
Volume 10, Issue 3 - Oct 2001
Volume 10, Issue 2 - Jul 2001
Volume 10, Issue 1 - Apr 2001
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A variation of elastic modulus of very thin diamond-like carbon films with deposition condition
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 387~395
The elastic modulus and the structural evolution were examined with the film thickness in polymeric, hard, graphitic diamond-like carbon (DLC) films. The DLC films used in the present study were prepared by radio frequency plasma assisted chemical vapor deposition (r.f.-PACVD) from
gas. Elastic modulus of very thin DLC film was measured by free overhang method. This method has an advantage over the other methods. Because the substrate was removed by etching technique, the measured value is not affected by the mechanical property of the substrate. The structural evolution was investigated by the G-peak position of the Raman spectrum. The polymeric and graphitic films exhibited the decreased elastic modulus with decreasing film thickness. In polymeric films, the reason was that more polymeric film had been deposited in the initial stage of the film growth and in graphitic film more graphic films which had been deposited in the initial stage decreased the elastic modulus. The G-peak position of the Raman spectrum confirmed this result. On the other hand, the hard film showed the constant elastic modulus regardless to the film thickness. The structural change was not observed in this range of the film thickness.
Sputtering yield of the MgO thin film grown on the Cu substrate by using the focused ion beam
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 396~402
MgO thin films with 1000
thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000
thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.
Improvement of electromigration characteristics in using Ai interlayer
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 403~410
Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.
Dry etching of tin oxide thin films using an atmospheric pressure cold plasma
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 411~415
Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of tin oxide
thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the cathode material by an analysis with optical emission spectroscopy as well as by the plasma impedance. The etching ability of this plasma was evaluated by an emission intensity as well as by the evaluation of impedance using a plasma I-V curve.
Heat treatment effects of
thin films grown on ITO glasses by RE-magnetron sputtering method
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 416~423
Microstructural, optical and dielectric properties of
thin films were investigated. These films were deposited on the ITO glasses by rf-magnetron sputtering at room temperature and subequently heat treated in
atmosphere at various temperatures. It has been found from X-ray diffraction patterns that as-deposited films prepared at room temperature are amorphous, while the films heat treated at temperature range of 400~
reveal the structure of pyrochlore. On the other hand, the structure of perovskite is dominantly observed in the films heat treated at temperatures over
in which the drastic changes of optical band gap and dielectric constant are observed. In addition, the phase transition peak is observed at
in the films heat treated at
, while the dielectric dispersion is observed at near
in the films heat treated at
Determination of electron energy distribution functions in radio-frequency (RF) and microwave discharges
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 424~430
An electron Boltzmann equation is solved numerically to calculate the electron energy distribution functions in plasma discharge which is generated by radio-frequency (RF) and microwave frequency electric field. The maintenance field strengths are determined self-consistently by solving the homogeneous electron Boltzmann equation in the Lorentz approximation expressed by 2nd order differential equation and an additional particle balance equation expressed by integro-differential equation. By using this numerical code, the electron energy distribution functions in argon discharge are calculated in the range from RF to microwave frequency. The influence of frequency of the HF electric field on the electron energy distribution functions and ionization rate are investigated.
The effects of solenoid magnet on plasma extraction in Filtered Vacuum Arc Source (FVAS)
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 431~439
In this paper, the a-Diamond films were synthesized using filtered vacuum arc source (FVAS), FVAS was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were composed of one permanent magnet and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Cathode was made of graphite with 80 mm in diameter. The effects of solenoid magnet on plasma extraction were investigated by computer simulation and experiment using Taguchi's methode. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. The beam current density was 3.2 mA/
and average deposition rate was 5
/sec when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, 5 A, and 5 A, respectively. The beam current density and the efficiency of beam transportation were increased with the positive bias voltage of the plasma duct.
The operation properties of DBD reactors in air pressure with varying the capacitance of reactors
Journal of the Korean Vacuum Society, volume 10, issue 4, 2001, Pages 440~448
The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency
which optimizes the efficiency of operation was found as such
when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.