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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 11, Issue 4 - Dec 2002
Volume 11, Issue 3 - Sep 2002
Volume 11, Issue 2 - Jun 2002
Volume 11, Issue 1 - Apr 2002
Selecting the target year
Development of characteristics evaluating system for low vacuum gauges
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 189~193
We have developed a characteristics evaluating system for low vacuum gauges with a project of basis of vacuum technology construction. By using this system, we also performed a characteristics evaluation as to the accuracy, linearity, repeatability, gas sensitivity, and long-term stability of thermal conductivity gauges.
The effect of the heat treatment of MOCVD Cu thin film on electromigration
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 194~200
MOCVD(metal-organic chemical vapor deposition) copper thin film was annealed at various conditions and the eletrical properties and micro-structures were investigated to find the optimal annealing condition and its effect. Cu thin film annealed at Ar 1 torr,
had the most improved resistivity of 1.98
cm, and texture; the ratio of
was varied from 2.03 to 3.11, and Cu thin film annealed at Ar 1 torr,
had the largest grain size and uniformity. After the annealing, the EM(electromigration) test was followed to ensure the improved properties by annealing. Compare to other conditions, Cu patterns annealed at Ar 1 torr,
had the most improved properties when it came to the EM resistance, which was due to the low resistivity, the preferential evolution of texture to (111) plane, and the reduction of surface roughness of annealed copper film.
Pd/Si/Pd/Ti/Au Ohmic Contact for Application to AIGaAs/GaAs HBT
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 201~206
Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of
was achieved at
/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-
for longer than 30 seconds, and to high-
for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.
Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 207~211
Band gap tuning by quantum well disordering in
quantum well structure has been investigated using photoluminescence. The threshold temperature for the blue shift was about
, and the blue shift became larger as the annealing temperature increased.
showed saturation as the annealing temperature increased.
caused larger blue shift than
, which is considered to be related to the low growth temperature of
. The diffusion of P and Ga are thought to be responsible for the blue shift of the
capped quantum well disordering , respectively.
Highly Reliable Trench Gate MOSFET using Hydrogen Annealing
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 212~217
A new technique for highly controllable trench corner rounding at the top and bottom of the trench using pull-back and hydrogen annealing has been developed and investigated. The pull-back process could control the trench corner rounding radius at the top comers of the trench. The silicon migration generated by hydrogen annealing at the trench coiners provided (111) and (311) crystal planes and gave a uniform gate-oxide thickness, resulting in high reliable trench DMOSFETs with highly breakdown voltages and low leakage currents. The breakdown voltage of a trench DMOSFET fabricated using hydrogen annealing was increased by 25% compared with a conventional DMOSFET. The reasonable drain current of 45.3 A was obtained when a gate voltage of 10 V was supplied. The on-resistance of the trench gate DMOSFET fabricated using the trench cell of 45,000 was about 55 m(at a gate voltage of 10 V under a drain current of 5 A.
RRT Study for the Quantitative Analysis of Boron in Silicon
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 218~224
A domestic round robin test(RRT) for the quantitative analysis of minor impurities was performed by a standard procedure and standard reference material. The certified reference material(CRM)s for B-doped Si thin film and analysis specimens and the analysis specimens were prepared by an ion beam sputter deposition method. These samples were certified by inductively coupled plasma mass spectrometry(ICP-MS) with isotope dilution method which il one of the most quantitative methods in chemical analysis. By using an international standard procedure(ISO/DIS-l4237) for the quantitative analysis of B in Si by SIMS, a domestic RRT was performed for these specimens. Although only a few laboratories participated in this RRT, the average B concentration well agreed with the certified value within 2% error.
The effect of process variations and post thermal annealing on the properties of LPCVD polycrystalline silicon
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 225~229
LPCVD silicon films were deposited at temperatures between
Structure, surface roughness, films thickness and residual stress were measured by using XRD, SEM, ellipsometer,
, Tencor FLX-2320 and other techniques. Polysilicon films of low stress, small surface roughness were obtained when the films are deposited at
in the amorphous phase and subsequently annealed to make polycrystalline silicon layers at
. The silicon films deposited in amorphous phase and crystallized by post thermal treatment showed better mechanical properties.
Properties of MFS capacitors with various gate electrodes using
ferroelectric thin film
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 230~234
Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed
/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the
thin film. The dielectric constant of the
film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of
order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about
.eV. The typical measured remnant polarization(2Pr) value was about 1.2
, in an applied electric field of
300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about
switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.
A New Method for Deep Trench Isolation Using Selective Polycrystalline Silicon Growth
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 235~239
A new method for deep trench isolation using selective growth of polycrystalline silicon is proposed. In this method, trench filling is performed by forming polysilicon-inner sidewalls within the trench, and then selectively growing them by reduced chemical vapor deposition using
. The surface profiles of filled trenches are determined mainly by the initial depth of inner sidewalls and the total thickness of selective growth. No chemical mechanical polishing(CMP) process is needed in this new method, which makes the process flow simpler and more reliable in comparison with the conventional method using CMP process.
Synthesis and Characterization of Transition Metal Doped
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 240~248
films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile
(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in
films were found to be +4 and a mixture of +2 and +3, respectively. More
species exist in higher Fe doped film of
. The morphology of
film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand,
film consists of round shaped small islands showing somewhat rougher surface compared to the surface of
Anisotropic etching characteristics of single crystal silicon by KOH and KOH-IPA solutions
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 249~255
For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline
on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above
, and V-groove shapes observed at below
. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.
Growth of carbon nanotubes on metal substrates using microwave plasma-enhanced chemical vapor deposition
Journal of the Korean Vacuum Society, volume 11, issue 4, 2002, Pages 256~260
Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at
with gas mixture CH
(11%) and H
(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/