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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 12, Issue 4 - Dec 2003
Volume 12, Issue S1 - Oct 2003
Volume 12, Issue 3 - Sep 2003
Volume 12, Issue 2 - Jun 2003
Volume 12, Issue 1 - Mar 2003
Selecting the target year
Study on the evaporation of high melting temperature metal by using the manufactured electron hem gun system
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 1~6
An axial electron beam gun system, which emits the electron beam power of 50 kW, has been manufactured. The electron beam gun consists of two parts. One is the electron beam generation part. including the filament, cathode, and anode. The maximum beam current is 2 A and the acceleration voltage is 25 kV. The other part includes the focusing-, deflection-, and scanning coils. The beam diameter and ham trajectory can be controlled by these coils. The characteristic of each part is measured ior the optimum condition of evaporation process. Moreover, Helmholtz coil is installed inside the vacuum chamber to adjust the incident angel of the beam to the melting surface for the maximum evaporation. We report on the evaporation rates for zirconium(Zr) and gadolinium(Gd) metals which have the high melting temperatures.
Calibration uncertainty of a spinning rotor gauge
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 7~15
Spinning Rotor Gauge (SRG) has been used to transfer standard gauge for international comparison at the high vacuum standards. We calibrated a spinning rotor gauge by using dynamic calibration system (DCS) that was a national high vacuum standards system. And its uncertainties were evaluated with the International Organization for Standardization (ISO), they were recognized ai A type uncertainty, B type uncertainty, combined Standard uncertainty, and expanded uncertainty. The combined standard uncertainties were
Pa ~ ~
Pa for this spinning rotor gauge.
Determination of the work function of the Ni thin films by using
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 16~19
Ni thin films on the p-InP (In) substrates were grown at room temperature by using the ion beam-assisted deposition. In order to determine the work function of the Ni thin films, the
values were measured as functions of the acceleration voltages by using Ne, Ar,
. and Xe ion sources. The dependences of the values on various gases and on the acceleration voltages of the focused ion beam were obtained to determine the work function of the Ni thin films. The value of the work function of the Ni thin films grown on the p-InP (100) substrate was 5.8 eV ~ 5.85 eV. These results provide important information on the electronic properties of Ni thin films grown on p-InP (100) substrates at room temperature.
Parametric model for the dielectric function of InGaAs alloy films
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 20~24
We Performed the modeling of the dielectric functions of InGaAs by using the parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of InGaAs materials. We obtained the values of fitting parameters of an arbitrary composition
through the parametric model. And then, from these parameters we could obtain the unknown dielectric functions of InGaAs alloy films (
Investigation of Amorphous Carbon Film Deposition by Molecular Dynamic Simulation
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 25~34
Deposition behavior of hard amorphous carbon film was investigated by molecular dynamic simulation using Tersoff potential which was suggested for the interaction potential between carbon atoms. When high energy carbon atoms were collided on diamond (100) surface, dense amorphous carbon film could be obtained. Physical properties of the simulated carbon film were compared with those of the film deposited by filtered cathodic arc process. As in the experimental result, the most diamond-like film was obtained at an optimum kinetic energy of the incident carbon atoms. The optimum kinetic energy was 50 eV, which is comparable to the experimental observation. The simulated film was amorphous with short range order of diamond lattice. At the optimum kinetic energy condition, we found that significant amount of carbon atom were placed at a metastable site of distance 2.1
. By melting and quenching simulation of diamond lattice, it was shown that this metastatic peak is Proportional to the quenching rate. These results show that the hard and dense diamond-like film could be obtained when the localized thermal spike due to the collision of high energy carbon atom can be effectively dissipated to the lattice.
Effect of deposition temperature on field emission property of carbon thin film grown by PECVD
;;M. Katayama;;K. Oura;
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 35~39
Using RF plasma enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field electron emission of these films were examined at a function of deposition temperature. It was found that the electron emission current of the sample prepared at deposition temperature above
was considerably improved. The film grown at deposition temperature of
had the best threshold field of 8 V/
in this experiment. According to the results of Raman spectroscopy. growth of graphite crystallites was promoted with higher deposition temperatures. Moreover the surface morphology was abruptly changed at deposition temperature above
. We discuss the field electron emission characteristics of amorphous carbon films with regard to the structural feature and surface morphology.
A Study on the MIM diode for LCD Device
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 40~45
thin films have been obtained from the anodization of deposited tantalum (Ta). The as-deposited amorphous films of 750
thickness have excellent electrical properties. These properties include refractive indices 2.1~2.2 dielectric constants ~25, and leakage currents
at 1 MV
. We fabricated a MIM element with the
films. They have perfect current-voltage symmetry characteristics. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment. The effects of various processing conditions (top-electrode metals, annealing conditions) on the MIM device performances will be extensively discussed throughout this work
External Electrode Fluorescent Lamp Backlight Driven by Square Pulses
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 46~50
Characteristic properties of backlight arraying external electrode fluorescent lamps has been investigated indriving with a square wave from switch inverters. In the backlight of 17 inch-diagonal with 12 lamps, the efficiency of 65-70 1m/W with the luminance of 5,000-10,000 cd/
has been achieved in the frequency range 40-80 kHz where the higher frequency provides the lower operating voltage in the range 1.0-2.0 kV. In the frequency above 80 kHz, a stable and an uniform luminance in the backlight panel can not be achieved.
Observation of spontaneous oscillation of optogalvanic signal in a hollow cathode discharge
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 51~54
The spontaneous oscillations in the optogalvanic signals are observed in negative glow region of Ar hollow cathode discharge. The spontaneous oscillations in the optogalvanic signals are observed at low discharge currents less than about 3 mA. Based on the simultaneous measurements of both the density variation of metastable atoms and emission intensities of the 1s-2p transitions, one of the possible mechanisms for the spontaneous oscillation is considered to be related to the stepwise ionization of the metastable atoms due to collisions with slow electrons in the discharge.
Solid surface smoothing and etching by gas cluster ion beam
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 55~63
A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of
gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of
at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.
Measurement of temperature profile in molter metal using a cod camera
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 64~69
Using a high fewer electron beam gun (max. power 20 kW), Gadolinium (Gd, atomic number 64) metal was melted and the temperature distribution of melted surface was measured. With proper optical filters and the adjustment of aperture of lens, the radiation of melted surface was received by a ccd camera and its signal transferred to a computer. The real time monitoring of melted surface with a variation of electron beam Power was Possible and stable operation of electron beam was achieved. It was found that the max. temperature measured by a ccd camera with an assumption of blackbody radiation of melted Gd surface and adaption of Planet's law was above 100~
compared to that measured by a pyrometer in the same e-beam power.
Nitrogen Effect on Vertically Aligned CNT Growth
Journal of the Korean Vacuum Society, volume 12, issue 1, 2003, Pages 70~77
It is well Down that the growth of carbon nanotubes (CNTs) by chemical vapor deposition (CVD) using a transition metal catalyst is greatly enhanced in a nitrogen environment. We show here that the enhanced growth is closely related to the activated nitrogen and it's incorporation into the CNT wall and cap during growth. This behavior is consistent with theoretical calculations of CNx thin films, showing that nitrogen incorporation to the graphitic basal plane reduces the elastic strain energy for curving the graphitic layer. Enhanced CNT growth by nitrogen incorporation is thus due to a decrease in the activation energies required for nucleation and growth of the tubular graphitic layer.