Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 13, Issue 4 - Dec 2004
Volume 13, Issue 3 - Sep 2004
Volume 13, Issue 2 - Jun 2004
Volume 13, Issue 1 - Mar 2004
Selecting the target year
Pumping Performance Test of the NEG Elements
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 47~53
A getter pump test system is being developed as a core item of the national project for establishing the foundation of the vacuum technology in our country. A preliminary test system was prepared for developing the getter test procedure, and providing design requirements and system specifications before setting up the getter pump test system. The pumping speed and the pumping capacity of getter elements of low activation temperature used in the seal-off vacuum devices, for the hydrogen, carbon monoxide and nitrogen gases, were measured using the preliminary test system. The pumping characteristics of a domestic getter, developed mainly for the gas purifier, were compared with those of a foreign getter used widely in the lamp factories.
Pressure fluctuations of the hot cathode ionization gauges at the stainless steel high vacuum chamber according to room temperature variations
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 54~58
Three hot cathode ionization gauges (HCIG) were used to study their responses of pressure measurements at the stainless steel high vacuum (HV) chamber around room temperatures. The pressure variations of HV measured by the three HCIGs between
were 5.0 %, 5.3 %, and 10.3 %, respectively. However, pressure differences between
were lower than the gauges uncertainty limits. The pressure variations of the HCIGs at the HV chamber was not directly affected by gauge characteristics, but pressure changes due to room temperatures.
Semiconductor laser-based absorption spectroscopy for monitoring physical vapor deposition process
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 59~64
A study on the semiconductor laser-based atomic absorption spectroscopy was performed for monitoring physical vapor deposition process. Gadolinium metal was vaporized with a high evaporation rate by electron beam heating. Real-time atomic absorption spectra were measured by using tunable semiconductor laser beam at 770-794 nm (center wavelength of 780 nm) and its second harmonic at 388-396 nm. Atomic densities of metal vapor can be calculated from the absorption spectra measured. We plot the atomic densities as a function of the electron beam power and compare with the evaporation rates measured by quartz crystal monitor. We demonstrate that the semiconductor laser-based spectroscopic system developed in this study can be applied to monitor the physical vapor deposition process for other metals such as titanium.
ESR spectrum change for the a-C : H films exposed in the atmosphere
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 65~71
ESR spectrum change has been investigated for the PECVD deposited a-C : H films exposed in the atmosphere. Though depending on the deposition conditions, it was observed that generally ESR signal height decreased and linewidth increased as the exposure time increased. The spin density decreased down to 40-80% depending on samples. The decrease of spin density of the a-C : H films in the air was attributed to permeation of moisture into the films and subsequent migration and redistribution of hydrogens. And the ESR signal height increased again and the linewidth decreased when the a-C : H samples were placed again in the vacuum, which was attributed to oxygens extracted from the samples. Consequently, the ESR spectrum change for the a-C : H films exposed in the air was regarded to be associated with the decrease of spin density as well as the permeation of oxygens into films.
The Microstructure and physical properties of electroplated Cu films
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 72~78
Cu seed layers deposited by magnetron sputtering onto tantalum nitride barrier films were treated with ECR plasma and then the copper films were electroplated and rapid thermal annealed in an argon or nitrogen atmosphere at various temperatures ranging from 200 to
. Changes in the microstructure and physical properties of the copper films electroplated on the hydrogen ECR plasma cleaned copper seed layers were investigated using X-ray diffraction (XRD), electron back-scattered diffraction (EBSD), and atomic force microscopy (AFM) analyses. It was found that the copper film undergoes complete recrystallization during annealing at a temperature higher than
. The resistivity of the Cu film tends to decrease and the degree of (111) preferred orientation tends to increase as the annealing temperature increases. Theoptimum annealing condition for obtaining the film with the lowest resistivity, the smoothest surface and the highest degree of the (111) preferred orientation is rapid thermal annealing in a nitrogen atmosphere at
for 120 s. The resistivity and the surface roughness of the electroplated copper film annealed under this condition are 1.98
O-cm and 17.77 nm, respectively.
Analysis of dominant impurities in Cu and Ta films using SIMS and GDMS
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 79~85
Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.
Chemical and Electronic structures of
alloys by X-ray Analyses
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 86~91
Transiton-metal gallides attract wide interest as a candidate for high-temperature structural materials. In a wide composition range, in which it was known that Co-Ga alloy have CsCl (B2) crystallographic structure, a systematic study on the correlation between physical properties and electronic structures of Co-gallides was performed.
) were prepared by arc-melting method and were annealed at
for 48hour to increase the homogeneity. In this composition range all the prepared alloys have the CsCl (B2) structure. The chemical states and the electronic structure were studied by using x-ray photoemission spectroscopy (XPS), and x-ray absorption near-edge structure (XANES), and exhibit different physical properties depending on the composition. During the annealing, a significant oxidation has happened and all the oxygen atoms are incorporated with the Ga atoms to form a
phase. In a view point of electronic structure, the
alloys were formed by the Ga(p) - Co(d) hybridization.
The Defect Characterization of
: Tb Crystals by Positron Annihilation Spectroscopy
Journal of the Korean Vacuum Society, volume 13, issue 2, 2004, Pages 92~98
DBPAS has been used to characterize atomic size defect structures in materials. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. As the samples were exposed by X-ray increasing the exposed doses from 3, 6, and 9 Gy with 6 MV and 15 MV, respectively and also irradiated by X-ray as the medical applications used for in 0, 2, 4 and 6 years. The S-parameter values were increased as increasing the exposed time and the energies, that indicated the defects generate more. The S-parameters of the samples with medical treatment is varied from 0.4932 to 0.4956.