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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 15, Issue 6 - Nov 2006
Volume 15, Issue 5 - Sep 2006
Volume 15, Issue 4 - Jul 2006
Volume 15, Issue 3 - May 2006
Volume 15, Issue 2 - Mar 2006
Volume 15, Issue 1 - Jan 2006
Selecting the target year
National Vacuum Standards from Low to Ultra-high Vacuum
Hong S. S. ; Lim I. T. ; Shin Y. H. ; Chung K. H. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 1~13
Vacuum laboratory in Korea Research Institute of Standards and Science (KRISS) was opened in 1983 for establishing and disseminating vacuum standard in Korea. The major three systems such as the ultrasonic interferometer manometer (UIM), the static expansion system (SES) and the dynamic expansion system (DES) with orifice and porous plug conductance are developed. In this study, the standard systems from low to ultra-high vacuum, uncertainty analysis by ISO regulation, and key and bilateral comparison results will be described.
Hydrogen Pumping Characteristics of a Scroll Pump
In S. R. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 14~23
The scroll pump is widely used in ultra clean vacuum systems. However, there is no commonly available information on the hydrogen pumping characteristics of this pump, which creates a difficulty in determining whether the scroll pump can be used or not in a fusion experiment system where hydrogen ,is the main working gas. In this paper the experimental setup, measurement procedures, experimental results, and discussions on the pumping speed, the maximum compression ratio and the back-streaming properties of the scroll pump, especially for the hydrogen gas, are reported.
Integrated Cavity Output Spectroscopy Using an External Cavity Diode Laser for the Density Absorption Measurement of Trace Gases
Ryoo Hoon Chul ; Yoo Yong Shin ; Lee Jae Yong ; Hahn Jae Won ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 24~30
Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of
Analysis of Core-level Spectra of the
Cho, Hye-Jin ; Kim, Yeong-Hoon ; Lee, Geun-Seop ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 31~36
By analyzing the Ge 34 core-level photoelectron spectrum, we studied the structure of the
surface. Two surface related components tying on either side of the main bulk peak were identified in the Ge 3d spectrum. The existence and the position of the two surface components in the core-level spectrum from
is similar to those of the
, suggesting the similarities in structure of the two surfaces. The core-level photoelectron spectra of the Li-induced
surface are well consistent with the honeycomb-chain-channel model, which was proposed as the structure of the
induced by alkali metals.
Homoepitaxial Growth Mode of
Confirmed by Scanning Tunneling Microscope (STH)
Kim Hidong ; Cho Yumi ; Seo Jae M. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 37~44
The homoepitaxy of Si(5 5 12) at
has been studied by Scanning Tunneling Microscopy under ultrahigh vacuum. A Si-dimer is the basic building-block and preferentially adsorbs on a unique site, that is, the Si-dimer/adatom site at the (337) and the (225) subsections within the Si(5 5 12) unit cell. The Si(5 5 12) unit cell is faceted to
subsections filled with Si-addimers and
subsection. In this step the tetramer at the other (337) section within the unit cell is transformed to a dimer/adatom site which can accept Si-dimers. Each (337) section is faceted to
, and then finally the unit cell of Si(5 5 12) is faceted to
and forms the facet of effective height,
. In this step, mutual transformation between the honeycomb chain and the dimer/adatom occurs. Finally, the valley between (112) and (113) facets is filled. If once the last step is completed, the uniform and planar Si(5 5 12) terrace is recovered. From the present study, therefore, it can be concluded that the homoepitaxy on Si(5 5 12) is periodically achieved and such growth mode is quite unique since faceting of the substrate-unit-cell plays a critical role for controlling uniformity of the overlayer.
The Growth Mode of Cu Atoms on Cu(110) and Oxygen-covered Cu(110) Surfaces by Reflectance Difference Spectroscopy
Kim S. H. ; Sun L. D. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 45~49
The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity
Adsorption Stnlctures of Benzene and Pyridine on a
Jang S. H. ; Oh S. ; Hahn J. R. ; Jeong H. ; Jeong S. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 50~56
We investigated the adsorption of benzene and pyridine on
at 80 K by using variable-low temperature scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The benzene molecule most strongly binds to two adatoms on the D3 and D2 units in a tilted butterfly configuration, which consists of
bonds between C atoms and Si adatoms and two C=C double bonds in the benzene molecule Pyridine molecules interact with adatom(s) on the D2 and D3 units through both Si-N dative bonding and
bonds. The dative bonding through the lone pair electrons of N atom produces a vertical configuration (pyridine-like), which is more stable than
bonds can be formed either through Si-N1 and Si-C4 or Si-C2 and Si-C5.
The Analysis of the Discharging Characteristics on the Base Vacuum Level in a Vacuum In-line Sealing Process for High-efficiency PDP
Kwon Sang Jik ; Jang Chan-Kyu ; Kim Yong-Jae ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 57~63
We have examined the electrical and optical characteristics of the plasma display panel(PDP) produced by vacuum in-line sealing technology. We found that the luminous efficiency was decreased as the base vacuum level was increased. For the base vacuum level of
Torr, the firing voltage was 235V at the discharge gas pressure of 400 Torr and the luminous efficiency was 0.8 lm/W at 180V sustaining pulse. However, for the base vacuum level of
Torr, the firing voltage was reduced to 215V and the luminous efficiency was improved to 2.5lm/w. Finally, we demonstrated successfully the operation of tip-less PDP fabricated using vacuum in-line sealing method.
Degradation Mechanisms of Organic Light-emitting Devices with a Glass Cap
Yang Yong Suk ; Chu Hye Yong ; Lee Jeong-Ik ; Park Sang-He ; Hwang Chi Sun ; Chung Sung Mook ; Do Lee-Mi ; Kim Gi Heon ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 64~72
We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum
. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents
, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.
Thermal Effusion of Implanted Inert Gas Ions from Si(100)
Jo Sam K. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 73~80
Thermally-driven effusion of inert gases out from Si(100), into which energetic
had been implanted at a moderate substrate temperatures of
, was investigated by means of temperature-programmed desorption (TPD) mass spectrometry. While He effused out broadly over
, Ne, Ar, and Kr effusion occurred sharply at 810, 860, and 875 K, respectively. Hydrogen adsorption/desorption analysis for the ion-treated Si(100) surfaces indicated minimal to severe damage by ions with increasing mass from He to Kr. Implications of these results in light of literature reports are discussed.
Morphological and Photoluminescence Characteristics of Laterally Self-aligned InGaAs/GaAs Quantum-dot Structures
Kim J. O. ; Choe J. W. ; Lee S. J. ; Noh S. K. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 81~88
Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and
. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few
, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.
A Study on the Electromigration Characteristics in Ag, Cu, Au, Al Thin Films
Kim, Jin-Young ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 89~96
Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than
, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials
Ion Transmittance of Anodic Alumina for Ion Beam Nano-patterning
Shin S. W. ; Lee J-H ; Lee S. G. ; Lee J. ; Whang C. N. ; Choi I-H ; Lee K. H. ; Jeung W. Y. ; Moon H.-C. ; Kim T. G. ; Song J. H. ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 97~102
Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were
, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than
is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole.
nano dot array was formed by ion irradiation into thin film AAO on
film. This was confirmed by scanning electron microscopy that the
nano dot array is similar to AAO hole array.
Design of X-ray Target for a CNT-based High-brightness Microfocus X-ray Tube
Ihsan Aamir ; Kim Seon Kyu ; Heo Seong Hwan ; Cho Sung Oh ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 103~109
A target for a high-brightness microfocus x-ray tube, which is based on carbon nanotubes (CNT) as electron source, is designed. The x-ray tube has the following specifications: brightness of
, spot size
, and average x-ray energy of
. In order to meet the specifications, the design parameters of the target, such as configuration, material, thickness of the target as well as the required beam current, were optimized using computer code MCNPX. The design parameters were determined from the calculation of both x-ray spectrum and intensity distribution for a transmission type configuration. For the thin transmission type target to withstand vacuum pressure and localized thermal loading, the structural stability and temperature distribution were also considered. The material of the target was selected as molybdenum(Mo) and the optimized thickness was
to be backed by
beryllium (Be). In addition, the calculations revealed that the maximum temperature of the transmission target can be maintained within the limits of stable operation.
Effect of TiAIN-based Nanoscale Multilayered Coating on the Cutting Performance of WC-Co Insert
Lim Hee-Youl ; Park Jong-Keuk ; Kim Kyung-Bae ; Choi Doo-Jin ; Baik Young-Joon ;
Journal of the Korean Vacuum Society, volume 15, issue 1, 2006, Pages 110~116
The mechanical property and cutting performance of the cutting tools coated with nanoscale nyktukatered nitride film have been investigated.
systems, which showed super-lattice in nanoscale multilayered coating, were deposited on WC-Co insert by UBM sputtering, The superlattice coatings with different bilayer periods were manufactured by controlling deposition parameters. The superlattice formation and hardness of the nanoscale multilayered nitride film and the cutting performance of the insert coated with the film were examined. The hardness and cutting performance were dependent on the bilayer periods of the coatings. The flank wear of the inserts with superlattice coatings were decreased over
, compared to those of commonly used cutting tools coated with TiAIN single phase.