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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
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Journal DOI :
The Korean Vacuum Society
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Volume & Issues
Volume 15, Issue 6 - Nov 2006
Volume 15, Issue 5 - Sep 2006
Volume 15, Issue 4 - Jul 2006
Volume 15, Issue 3 - May 2006
Volume 15, Issue 2 - Mar 2006
Volume 15, Issue 1 - Jan 2006
Selecting the target year
Overview on the Development of UHV Ion Pumps
Bonmassar, Luca ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 231~240
The paper reviews the development of ion pumps, their operating principles and describes particular designs. The performance of ion pumps when used for various gases, their range of operation and fields of application are discussed.
Characteristics of Inductively Coupled Plasma with a Multiple U-Type Internal Antenna for Flat Panel Display Applications
Lim, J.H. ; Kim, K.N. ; Yeom, G.Y. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 241~245
In this study, the characteristics of large area internal linear ICP sources of 1020mm X 920mm(substrate area is 880 X 660mm) were investigated using two different types of antenna, that is, a conventional serpentine-type antenna and a newly developed multiple U-type antenna. The multiple antenna showed a higher plasma density, a higher radical density, and more plasma stability compared to the serpentine-type antenna, and it appeared from the higher inductively coupling and less standing wave effect compared to the serpentine-type antenna. Using the multiple U-type antenna, the plasma density of
with the plasma uniformity of 4% could be obtained using 15mTorr Ar and 5000W of RF power.
Development of a Circuit Model for the Dynamic Plasma Load in a PSII Pulse System
Chung, K.J. ; Choe, J.M. ; Hwang, H.D. ; Kim, G.H. ; Ko, K.C. ; Hwang, Y.S. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 246~258
A circuit model has been developed to analyze characteristics of the PSII(plasma source ion implantation) pulse system with dynamic plasma load. The plasma sheath in front of the immersed planar target biased with a negative-high voltage pulse is assumed to be governed by the dynamic Child-Langmuir sheath model. Target current is self-consistently varied with the applied voltage by using the voltage-controlled current source in the circuit model. Circuit simulations are conducted with Pspice circuit simulator, and simulated pulse currents and voltages on the target are compared and confirmed with experimental results for various voltage pulses and plasma conditions.
Measurement of Sputtering Yield of
Plasma treated MgO Thin Films
Jeong, W.H. ; Jeong, K.W. ; Lim, Y.C. ; Oh, H.J. ; Park, C.W. ; Choi, E.H. ; Seo, Y.H. ; Kim, Y.K. ; Kang, S.O. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 259~265
We measured sputtering yield of RF
treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.
Pinhole Phenomena in the External Electrode Fluorescent Lamps
Gill, Doh-H. ; Kim, Sang-B. ; Song, Hyuk-S. ; Yu, Dong-G. ; Lee, Sang-H. ; Pak, Min-Sun ; Kang, June-Gill ; Cho, Guang-Sup ; Cho, Mee-R. ; Hwang, Myung-G. ; Kim, Young-Y. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 266~272
Application of power higher than the optimum operation value to an external electrode fluorescent lamps(EEFL) leads to the formation of small holes, called pinholes, which subsequently leads to lamp failure. The pinholes come from the insulating breakdown of the capacitor which is the dielectric layer between an external electrode and glass tube. The power of insulation breakdown is proportional to the electric power applied to the lamp. When a lamp current is low in the glass tube of dielectric constant K, the dielectric field strength of pinholes is about 3K kV/mm. The field strength of insulation breakdown decreases as the lamp current increases.
Formation of Porous Si by Indirect Electrode Anodization
Kim, Soon-Kyu ; Chang, Joon-Yeon ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 273~279
This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.
Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer
Cho, N.K. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Jeon, Heon-Su ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 280~286
A distributed Bragg reflector (DBR) for the application of
vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.
Humidity Dependence of Tribological Behavior of DLC Films
Park, Se-Jun ; Lee, Kwang-Ryeol ; Lee, Seung-Cheol ; Ko, Dae-Hong ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 287~293
Diamond-like carbon (DLC) film was deposited using benzene
by r. f-plasma assisted chemical vapor deposition. The tribological properties of the DLC film were tested by rotating ball-on-disc type tribometer isolated by a chamber. The tribological test was performed in air environment of relative humidity ranging from 0 to 90% in order to observe the tribological behavior of the DLC film with the change of humidity. We used steel ball and DLC coated steel ball to investigate the effect of the counterface material. Using steel ball, the friction coefficient of DLC film increased from 0.025 to 0.2 as the humidity increased from 0% to 90%. In case of DLC coated steel ball which didn't form the Fe-rich debris, the friction coefficient showed much lower dependence of humidity as 0.08 in relative humidity 90%. We confirmed that the high humidity dependence of the friction coefficient using steel ball resulted from the increase of debris size with humidity and the formation of Fe-rich debris by the wear of steel ball. And the friction coefficient was immediately dropped when the relative humidity changed from 90% to 0% during test using steel ball. From this result, we confirmed that the effect of the Fe-rich debris on the friction coefficient was that Fe element in debris formed the highly sensitive graphitic transfer layer to humidity.
Structural and Optical Characteristics of InAs/InAlGaAs Quantum Dots Grown on InP/InGaAs/InP Distributed Feedback Grating Structure
Kwack, H.S. ; Kim, J.S. ; Lee, J.H. ; Hong, S.U. ; Choi, B.S. ; Oh, D.K. ; Cho, Y.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 294~300
We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal-organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self-assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 nm, which was red-shifted by 18 nm from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.
Carrier Dynamics of P-modulation Doped In(Ga)A/InGaAsP Quantum Dots
Jang, Y.D. ; Park, J. ; Lee, D. ; Hong, S.U. ; Oh, D.K. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 301~307
We have investigated optical properties of p-modulation doped In(Ga)As quantum dots (QDs) on InP substrate with a comparison with the undoped QDs. Photoluminscence (PL) intensity of doped QDs at 10 K was about 10 times weaker than that of undoped QD sample. The decay time of doped QD sample at its PL peak, obtained from the time-resolved PL (TR-PL) experiment at 10 K, was very fast compared to that of undoped sample. We interpret that this fast decay time of the doped QD sample comes from the addition of non-radiative recombination paths, which are originated from the doping-related defects.
Optical Properties of Self-assembled InAs Quantum Dots with Bimodal Site Distribution
Jung, S.I. ; Yeo, H.Y. ; Yun, I. ; Han, I.K. ; Lee, J.I. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 308~313
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
Vacuum Characteristics of KSTAR ICRF Antenna during RF Operation
Bae, Young-Dug ; Kwak, Jong-Gu ; Hong, Bong-Geon ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 314~324
The vacuum characteristics of the KSTAR ICRF antenna were experimentally investigated. The fabricated antenna was installed in the RF Test Chamber(RFTC) which has a vacuum system with an effective pumping speed of 1015 l/s. The time variations of RFTC pressure, total gas load and ultimate pressure were measured before the RF test. RF conditioning effect was studied by repeating RF pulses at low power level. A time variation of the RFTC pressure was measured during a RF power was applied to the antenna. Threshold pressure at which a RF breakdown occurs was investigated. Whenever the pressure was higher than
mbar, the RF breakdown occurred. During a long pulse testing, the temperature of the antenna and RFTC pressure were measured to investigate long pulse limitation of the maximum available voltage without any cooling, which were compared with testing results with a water cooling of the antenna.
High Heat Flux Test of Cu/SS Mock-up for ITER First Wall
Lee, D.W. ; Bae, Y.D. ; Hong, B.G. ; Lee, J.H. ; Park, J.Y. ; Jeong, Y.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 3, 2006, Pages 325~330
In order to verify the integrity of the first wall (FW) of the International Thermonuclear Experimental Reactor (ITER), the fabricated Cu/SS mock-up is tested in the JAEA Electron Beam Irradiation Test Stand (JEBIS). To fabricate the Cu/SS mock-up, CuCrZr and 316L authentic stainless steel (SS316L) are used for Cu alloy and steel, respectively The hot isostatic pressing (HIP) is used as a manufacturing method with a
and 150 MPa. The high heat flux (HHF) test is performed using an electron beam with a heat flux of
and a cycle of 15-sec on time and 30-sec off time. The temperature measurement in the HHF test shows good agreement with the results obtained from ANSYS code analysis, which is used for determining the HHF test conditions.