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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 15, Issue 6 - Nov 2006
Volume 15, Issue 5 - Sep 2006
Volume 15, Issue 4 - Jul 2006
Volume 15, Issue 3 - May 2006
Volume 15, Issue 2 - Mar 2006
Volume 15, Issue 1 - Jan 2006
Selecting the target year
Pohang Accelerator Laboratory and the 4th Generation Light Sourc
Choi, Jin-Hyuk ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 547~555
The Pohang Light Source (PLS) of Pohang Accelerator Laboratory (PAL), which was constructed in 1994, is a 3rd generation synchrotron light source user facility. It consists of 2.5 GeV linear accelerator and a storage ring with circumference of 280 m. Presently, 27 beamlines around the storage ring are in operation providing synchrotron radiations to users. In addition, PAL has a construction project of the 4th generation light source. In this paper, the operation status of the PLS is described and the prospect of the 4th generation light source is reviewed.
Physical Mechanism of Light emission from Discharge Cells in the Plasma Display Panel
Uhm, Han-S. ; Choi, Eun-H. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 556~562
The plasma display panel is made of many small discharge cells, which consist of a discharge space between the cathode and anode. An electrical discharge occurs in the discharge space filled by neon and xenon gases. The electron temperature is determined from the sparking criterion, which theoretically estimates the electrical breakdown voltage in terms of the xenon mole fraction. The plasma in the cell emits vacuum ultraviolet lights of 147 nm and 173 nm, exciting fluorescent material and converting VUV lights to visible lights. The physical mechanisms of all these processes have been theoretically modeled and experimentally measured. The theory and experimental data agree reasonably well. However, new materials and better configuration of cells are needed to enhance discharge and light emission efficiency and to improve the PDP performance.
Low Temperature Growth of MCN(M=Ti, Hf) Coating Layers by Plasma Enhanced MOCVD and Study on Their Characteristics
Boo, Jin-Hyo ; Heo, Cheol-Ho ; Cho, Yong-Ki ; Yoon, Joo-Sun ; Han, Jeon-G. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 563~575
Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at
. To compare plasma parameter, in this study,
gases are used as carrier gas. The effect of
gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and
mixture is very effective in enhancing ionization of radicals, especially for the
gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be
depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of
gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and
mixture. The depositions were carried out at temperature of below
, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be
for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed.
, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.
Laser absorption spectroscopy of ternary gas mixture of He-Ne-Xe in External Electrode Fluorescent Lamp (EEFL)
Jeong, S.H. ; Oh, P.Y. ; Lee, J.H. ; Cho, G.S. ; Choi, E.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 576~580
Mercury-free lamp, external electrode fluorescent lamp (EEFL) which includes the xenon gas, is now going on the research for the replacement of mercury lamp. The densities of excited xenon atom in the
resonance state and the
metastable state are investigated in the EEFL by a laser absorption spectroscopy under various gas pressures. We have measured the absorption signals for both
resonance and the
metastable state in the EEFL by varying the discharge currents for a given pressure. This basic absorption characteristic is very important for improvement of the VUV luminous efficiency of the EEFL as well as plasma display panel.
Emission spectroscopic diagnostics of argon arc Plasma in Plasma focus device for advanced lithography light source
Hong, Y.J. ; Moon, M.W. ; Lee, S.B. ; Oh, P.Y. ; Song, K.B. ; Hong, B.H. ; Seo, Y.H. ; Yi, W.J. ; Shin, H.M. ; Choi, E.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 581~586
We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages
to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be
, respectively, from Saha equation.
Analysis of Inverter Circuit with External Electrode Fluorescent Lamps for LCD Backlight
Jeong, Jong-Mun ; Shin, Myeong-Ju ; Lee, Mi-Ran ; Kim, Ga-Eul ; Kim, Jung-Hyun ; Kim, Sang-Jin ; Lee, Min-Kyu ; Kang, Mi-Jo ; Shin, Sang-Cho ; Ahn, Sang-Hyun ; Gill, Do-Hyun ; Yoo, Dong-Gun ; Koo, Je-Huan ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 587~593
The circuit of the EEFL system and the inverter has been analyzed into the resistance RL, the capacitance C of the EEFL-backlight system, and the inductance of transformer in the inverter. The lamp resistance and capacitance are deter-mined from the phase difference is between the lamp current and voltage and from the Q-V diagram, respectively. The single Lamp of EEFL for 32' LCD-BLU has the resistance of
and the capacitance of 21.61 pF. The resistance, which is connected by parallel in the 20-EEFLS BLU, is
and the capacitance is 402.1 pF. The matching frequency in the operation of lamp system is noted as
is the inductance of secondary coil and k is the coupling coefficient between primary and secondary coil. The lamp current and voltage has maximum value at the matching frequency in the LCD BLU system. The results of analytic solutions are in good agreement with the experimental results.
Gas Flow Pattern Through a Long Round Tube of a Gas Fueling System (II)
In, S.R. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 594~604
Gas fueling systems operated in the mode of a fixed valve opening at a constant line pressure, and the mode of a constant inlet flow are simulated to establish the relationships between the gas flow pattern and the tube dimensions under various system conditions.
Development of an Apparatus for In-situ Vacuum Gauge Calibration
Hong, S.S. ; Lim, I.T. ; Jho, M.J. ; Chung, W.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 605~611
We have developed in-situ vacuum gauge calibration system in the range 1 Pa to 100 kPa by using constant volume method. The system is capable of gauge calibration by comparison method without demount the reference gauges. The system will be useful for dissemination of national vacuum standards to foreign developing countries and domestic industries.
Surface Modification of Polytetrafluoroethylene by Using Low Energy Hydrogen Ion Beam
Lee, Jung-Hwan ; Kim, Dong-Hwan ; Yeo, Woon-Jung ; Han, Young-Gun ; Cho, Jun-Sik ; Kim, Hyun-Joo ; Koh, Seok-Jeun ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 612~618
Surface modification of PTFE by ion irradiation was performed to improve its surface properties, In the case where argon was used to irradiate the PTFE films, an increase in the adhesion strength was observed when the ion fluence was over
, but the surface morphology dramatically changed to a needle-shaped one. However, when we used hydrogen ions under
environmental gas, the adhesion strength increased at an ion fluence of
and the surface morphology by the hydrogen irradiation was not needle-shaped. The surface morphology and adhesion strength of the hydrogen modified PTFE was influenced by the oxygen flow rate. It was confirmed by reflectance measurements that the surface properties of the hydrogen ion irradiated PTFE were superior to those of the argon ion irradiated PTFE.
A Study on Preferred Orientation of ZnO Piezoelectric Thin Film Using Helped Seed Layer
Park, In-Chul ; Kim, Hong-Bae ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 619~623
The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard
of XRD rocking curve is of
have the excellent piezoelectric property.
Optical Characterization on Undoped and Mg-doped GaN Implanted with Nd
Song, Jong-Ho ; Rhee, Seuk-Joo ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 624~629
The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on
Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.
Dry Etching of Polysilicon by the RF Power and HBr Gas Changing in ICP Poly Etcher
Nam, S.H. ; Hyun, J.S. ; Boo, J.H. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 630~636
Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.
Study on the fabrication and the characterization of 100 nm T-gate InGaAs/InAlAs/GaAs Metamorphic HEMTs
Kim, H.S. ; Shin, D.H. ; Kim, S.K. ; Kim, H.B. ; Im, Hyun-Sik ; Kim, H.J. ;
Journal of the Korean Vacuum Society, volume 15, issue 6, 2006, Pages 637~641
We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a
unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance
of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency
of 192 GHz, and maximum oscillation frequency