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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 16, Issue 6 - Nov 2007
Volume 16, Issue 5 - Sep 2007
Volume 16, Issue 4 - Jul 2007
Volume 16, Issue 3 - May 2007
Volume 16, Issue 2 - Mar 2007
Volume 16, Issue 1 - Jan 2007
Selecting the target year
Brief Review of Silicon Solar Cells
Yi, Jun-Sin ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 161~166
DOI : 10.5757/JKVS.2007.16.3.161
Photovoltaic (PV) technology permits the transformation of solar light directly into electricity. For the last five years, the photovoltaic sector has experienced one of the highest growth rates worldwide (over 30% in 2006) and for the next 20 years, the average production growth rate is estimated to be between 27% and 34% annually. Currently the cost of electricity produced using photovoltaic technology is above that for traditional energy sources, but this is expected to fall with technological progress and more efficient production processes. A large scale production of solar grade silicon material of high purity could supply the world demand at a reasonably lower cost. A shift from crystalline silicon to thin film is expected in the future. The technical limit for the conversion efficiency is about 30%. It is assumed that in 2030 thin films will have a major market share (90%) and the share of crystalline cells will have decreased to 10%. Our research at Sungkyunkwan University of South Korea is confined to crystalline silicon solar cell technology. We aim to develop a technology for low cost production of high efficiency silicon solar cell. We have successfully fabricated silicon solar cells of efficiency more than 16% starting with multicrystalline wafers and that of efficiency more than 17% on single crystalline wafers with screen printing metallization. The process of transformation from the first generation to second generation solar cell should be geared up with the entry of new approaches but still silicon seems to remain as the major material for solar cells for many years to come. Local barriers to the implementation of this technology may also keep continuing up to year 2010 and by that time the cost of the solar cell generated power is expected to be 60 cent per watt. Photovoltaic source could establish itself as a clean and sustainable energy alternate to the ever depleting and polluting non-renewable energy resource.
Recent Development Status of Organic Solar Cells
Pang, Chang-Hyun ; Park, Keun-Hee ; Jung, Dong-Geun ; Chae, Hee-Yeop ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 167~171
DOI : 10.5757/JKVS.2007.16.3.167
Currently, the alternative energy is one of the critical issues because of exhaustion of petroleum resources and its high cost. The solar cell is considered as the one of the promising alternative energy. And the solar cell can be classified to inorganic solar cell and organic solar cell. Although the efficiency of organic solar cell is very lower than the that of inorganic solar cell, organic solar cells have many advantages including low process cost, high transmittance, color variation, and flexibility. For these reasons, organic solar cells have the potential in low cost solar cell market that is challenging for inorganic solar cells. Recent researches of organic solar cell is concentrating on enhancement of efficiency, lifetime, and stability to order to commercially use. Working principles and the development issues of organic solar cells are discussed in this paper.
Light Emission and Plasma Property in the External Electrode Fluorescent Lamps
Ahn, S. ; Lee, M. ; Jeong, J. ; Kim, J. ; Yoo, D. ; Koo, J. ; Kang, J. ; Hong, B. ; Choi, E. ; Cho, G. ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 172~180
DOI : 10.5757/JKVS.2007.16.3.172
A new diagnostics of plasma electron temperature and plasma density is introduced with the observation of the light emission along the tube of external electrode fluorescent lamps. With two different methods operating an external electrode fluorescent lamp of outer diameter 4.0 mm and length 860 mm for the back-light source of 37-inch LCD-TVs, the lighting modes and the plasma properties are investigated. In the center balance operation, the light-emission propagates simultaneously from both sides of the high voltage electrodes to the center of the lamp, while in conventional operation the light-emission propagates from the one end of a high voltage to the other ground electrode. In the operation value of luminance
, the electron plasma thermal energy
with the electron density
The Analysis of the Discharging Characteristics and MgO protective layer by MgO Evaporation Rates for High-Efficiency PDP
Kim, Yong-Jae ; Kwon, Sang-Jik ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 181~186
DOI : 10.5757/JKVS.2007.16.3.181
We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at
, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than
, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.
Synthesis and Surface Characterization of Carbon Nanotubes by Hot-Filament Plasma Enhanced Chemical Vapor Deposition
Choi, Eun-Chang ; Kim, Jung-Tae ; Park, Yong-Seob ; Choi, Won-Seok ; Hong, Byung-You ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 187~191
DOI : 10.5757/JKVS.2007.16.3.187
In this paper, the catalyst layer is deposited on silicon substrate using magnetron sputtering system and carbon nanotubes(CNTs) were grown in
gas by hot-filament plasma enhanced chemical vapor deposition (HFPECVD) system. A growth temperature of carbon nanotubes was changed from
. We observed the shape of CNTs by a field-emission scanning electron microscope(FE-SEM) measurement and analyzed the surface characteristic of CNTs layer by contact angle measurement. That is, the growth temperature of CNTs is the important factor leads to the variation of the properties.
Photoluminescence of ZnSe/CdSe/ZnSe Single Quantum Well
Park, J.G. ; O, Byung-Sung ; Yu, Y.M. ; Yoon, M.Y. ; Kim, D.J. ; Choi, Y.D. ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 192~196
DOI : 10.5757/JKVS.2007.16.3.192
ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about
from the intensities and the full-width at half maximum of photoluminescence(PL) spectra. When the thickness of quantum wells was less than the critical thickness, the Stoke's shift was confirmed from the comparison between PL and photoluminescence excitation spectra, and it may be due to the exciton binding energy. The PL peak energy dependence on the quantum well thickness was coincident with the theoretical values.
Change of Schottky barrier height in Er-silicide/p-silicon junction
Lee, Sol ; Jeon, Seung-Ho ; Ko, Chang-Hun ; Han, Moon-Sup ; Jang, Moon-Gyu ; Lee, Seong-Jae ; Park, Kyoung-Wan ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 197~204
DOI : 10.5757/JKVS.2007.16.3.197
Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to
. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated
from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the
phase in the Er-silicides and the large interfacial density of trap state of it.
ZnO thin film deposition at low temperature using ALD
Kim, H.S. ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 205~209
DOI : 10.5757/JKVS.2007.16.3.205
ZnO thin films were deposited on a Si wafer and a soda lime glass using atomic layer deposition(ALD). The substrate temperature were between
. The deposition rate of the ZnO film was measured to be
per cycle. The films were analyzed using field emission scanning electron microscopy(FESEM), X-ray diffractometer(XRD), and Auger electron spectroscopy(AES). Impurity-free ZnO thin films were obtained and the crystallinity was found to be dependant upon the substrate temperature.
Optical properties of Rare-Earth-Implanted GaN Epilayer
Kim, Yong-Min ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 210~214
DOI : 10.5757/JKVS.2007.16.3.210
We have studied optical transitions of Gd-implanted GaN epilayers. Photoluminescence transition intensity at 590 nm at T=5 K diminishes and its center position moves to short avelength (blue shift) with increasing temperature up to 200 K. Above T=200 K, the transition intensity increases with increasing temperature while the center position remains the same. We believe that such anomalous optical transition behavior is due to the effect of rare-element in the semiconductor host material and lattice imperfection which was occurred during the implantation process well as.
Properties of SBT Thin Film Synthesized by Self-seed Layer Method
Kim, Hyung-Sub ; Hwang, Dong-Hyun ; Yoon, Ji-Un ; Son, Young-Gook ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 215~220
DOI : 10.5757/JKVS.2007.16.3.215
Thin films of
structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and
, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.
DBR PSi/Polymer Composite Materials -Dual Photonic Characteristics
Park, Cheol-Young ; Jang, Seung-Hyun ; Kim, Ji-Hoon ; Park, Jae-Hyun ; Koh, Young-Dae ; Kim, Sung-Jin ; Ko, Young-Chun ; Sohn, Hong-Lae ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 221~226
DOI : 10.5757/JKVS.2007.16.3.221
DBR (distributed Bragg reflectors) PSi (porous silicon) composite films displaying dual optical properties, both optical reflectivity and photoluminescence had been developed. DBR PSi samples were prepared by electrochemical etch of heavily doped
silicon wafers (boron doped, polished on the <100> face, resistivity of
, Siltronix, Inc.). Free-standing DBR PSi films were treated with PMMA (polymethyl methacrylate) to produce flexible, stable composite materials in which the PSi matrix is covered with PMMA containing photoluminescent polysiloles. Optical characteristics of DBR PSi/polysilole-impregnated PMMA composite materials exhibit both their photonic reflectivity at 565 nm and photoluminescence at 510 nm, simultaneously. A possible application of this materials will be discussed.
Analysis of the initial absorbing behavior of Li ion battery
Jung, Cheol-Soo ; Lee, Do-Weon ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 227~230
DOI : 10.5757/JKVS.2007.16.3.227
In the Li ion battery fabrication process, an aging step has treated as a miner step because there is not so much data to define the relationship between the phenomena generated in aging process and the battery performances. However, the OCV(open circuit voltage) change in the aging process is shown by the electrochemical absorption of the electrolyte component to the both electrodes(anode or cathode) and the absorbed layer to the electrode affects to form the solid electrolyte interface(SEI) layer during the first charge process. In this report, the adsorbed materials are designed deliberately and are cleared to affect to the SEI layer formation.
The study of characterization about magnesium alloy eye-glasses case by anodizing and mixed method (anodizing+burning)
Yu, Jae-Yong ; Lim, Jin-Hwan ; Yu, Jae-In ; Kim, Jin-Hie ; Park, Chang-Hun ; Kim, Ki-Hong ;
Journal of the Korean Vacuum Society, volume 16, issue 3, 2007, Pages 231~234
DOI : 10.5757/JKVS.2007.16.3.231
During the anodizing and burning anodizing process, appreciable amounts of pores were generated on the surface of magnesium (Mg) alloy which deteriorate the quality of the alloy. However, additional burning process subsequent to the anodizing process reduces the density of pores on the surface. We found that additional burning process can increase the quality of Mg alloy. In addition we found that burning process increases homogeneity of the film thickness as well.