Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 16, Issue 6 - Nov 2007
Volume 16, Issue 5 - Sep 2007
Volume 16, Issue 4 - Jul 2007
Volume 16, Issue 3 - May 2007
Volume 16, Issue 2 - Mar 2007
Volume 16, Issue 1 - Jan 2007
Selecting the target year
International Standards Activities for ISO/TC 112 Vacuum Technology
Hong, S.S. ; Shin, Y.H. ; Kim, J.T. ; Chung, K.H. ; Choi, H.K. ; Kim, I.S. ; Park, W.Y. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 397~404
DOI : 10.5757/JKVS.2007.16.6.397
International Standardization for Vacuum pumps, vacuum instruments, and vacuum components has been established at ISO/TC 112 which is a technical committee of ISO (International Organization for Standardization) in the area of vacuum technology. This report shortly summarizes the structure of ISO/TC 112 and its activities on the standardization for vacuum technology. Also it introduces the brief contents of "specifications for hot cathode ionization gauges" and"Test procedure for vacuum valves" which are recently accepted as new proposals. These information on ISO/TC 112 would contribute to activate the development of vacuum technology as well as the participation for the international standardization in Korea.
Simulation of Design Factor Effects on Performance of Vacuum System
Kim, Hyung-Taek ; Jeong, Kwang-Pil ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 405~413
DOI : 10.5757/JKVS.2007.16.6.405
Effect of design factors on the performance of vacuum system was simulated for optimum design of system. In this investigation, the feasibility of modelling mechanism for
simulator was proposed. Simulation results of pumping design factor showed the possibilities of simulation fore-study for the detailed design factors. Simulation of roughing pump presented the expected pumping behaviors based on the specifications of commercial pump. Application of booster pump exhibited the high pumping efficiency for middle vacuum range. Combinations of optimum backing pump for diffusion and turbo vacuum system were obtained. And, the characteristics of process application of both systems were also acquired.
Cold Cathode using Avalanche Phenomenon at the Inversion Layer
Lee, Jung-Yong ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 414~423
DOI : 10.5757/JKVS.2007.16.6.414
Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of
, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.
Luminance Normalization of Optical Sheets in a Backlight Unit for LCD-TVs
Jeong, Jong-Mun ; Kim, Jung-Hyun ; Shin, Myeong-Ju ; Lee, Mi-Ran ; Chung, Jae-Yoon ; Jeong, Hee-Suk ; Kim, Jin-Sheon ; Hong, Byeong-Hee ; Kang, June-Gill ; Cho, Guang-Sup ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 424~432
DOI : 10.5757/JKVS.2007.16.6.424
Luminance properties of external electrode fluorescent lamps and optical components in backlight unit (BLU) and optical transmission rates of optical sheets, are investigated for LCD-TV of 32" in diagonal with WXGA level resolution (1366
768). The luminance is measured in 12-lamps and 18-lamps of BLU. The luminance uniformity preserves about 85 % in the 12-lamps backlight, while the luminance of optical components and the efficiency of backlight in the 12-lamps are lower than those in the 18-lamps backlight. When the lamp luminance in BLU having 12-lamps and 18-lamps is normalized as 100 %, the relative luminance of a diffusion plate, a diffusion sheet, a prism sheet (BEF), a polarization sheet (DBEF), has a constant value without dependence on a lamp luminance. The relative luminance of optical components in 12-lamps BLU is lower than that in 18-lamps backlight. The light transmission rate, the relative luminance of liquid crystal display panel with the luminance 100 % of backlight, is 7.14 % in the use of DBEF and BEF, 6.12 % in the use of only DBEF, and 3.21 % in the use of only BEF. Those Data obtained in this experiment for the lamps and optical components, are the design parameters for the LCD backlight.
The effect of annealing temperature and Ta layer on the electric conductivity of Au thin film deposited by the magnetron sputtering
Choi, Hyeok-Cheol ; You, Chun-Yeol ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 433~438
DOI : 10.5757/JKVS.2007.16.6.433
We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.
Characteristics of SiGe Thin Film Resistors in SiGe ICs
Lee, Sang-Heung ; Lee, Seung-Yun ; Park, Chan-Woo ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 439~445
DOI : 10.5757/JKVS.2007.16.6.439
SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits. In this paper, we investigate the causes that generate the resistance nonuniformity after the silicon-based thin film resistor was fabricated, and consider the counter plan against that. Because the Ti-B precipitate, which formed during the silicide process of the SiGe thin film resistor, gives rise to the nonuniformity of SiGe resistors, the boron ions should be implanted as many as possible. In addition, the resistance deviation increases as the size of the contact hole that interconnects the SiGe resistor and the metal line decreases. Therefore, the size of the contact hole must be enlarged in order to reduce the resistance deviation.
The effects of TiO2 interlayer phase transition on structural and electrical properties of PLZT Thin Films
Lee, Chul-Su ; Yoon, Ji-Eon ; Hwang, Dong-Hyun ; Cha, Won-Hyo ; Sona, Young-Gook ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 446~452
DOI : 10.5757/JKVS.2007.16.6.446
] thin films on the
substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on
interlayer. Changing the deposition conditions of
interlayer, we obtained
anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate
interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on
anatase interlayer was found to have (110)-preferred orientation and 12.6
remaining polarization value.
The optical properties of GZO and ZnO thin films deposited by RF magnetron sputtering
HwangBoe, S.J. ; Jeon, H.H. ; Kim, G.C. ; Lee, J.S. ; Kim, D.H. ; Choi, W.B. ; Jeon, M.H. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 453~457
DOI : 10.5757/JKVS.2007.16.6.453
Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200
1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.
Study on critical point of ZnCdSe by using Fourier analysis
Yoon, J.J. ; Ghong, T.H. ; Kim, Y.D. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 458~462
DOI : 10.5757/JKVS.2007.16.6.458
Spectroscopic ellipsometry is an excellent technique for determining dielectric function. To obtain critical point energy, standard analytic critical point expression is used conventionally for second derivatives of dielectric function which might increase high frequency noise than signal. However, reciprocal-space analysis offers several advantages for determining critical point parameters in optical and other spectra, for example the separation of baseline, information, and high frequency noise in low-, medium-, high-index Fourier coefficient, respectively. We used reciprocal Fourier analysis for removing noise and determining critical point of ZnCdSe alloy.
Structural and optical properties of ZnO epilayers grown on oxygen- and hydrogen-plasma treated sapphire substrates
Lee, S.K. ; Kim, J.Y. ; Kwack, H.S. ; Kwon, B.J. ; Ko, H.J. ; Yao, Takafumi ; Cho, Y.H. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 463~467
DOI : 10.5757/JKVS.2007.16.6.463
Structure and optical properties of ZnO epilayers grown on oxygen- and hydrogen-plasma treated sapphire substrates by plasma-assisted molecular beam epitaxy (denoted as samples A and B, respectively) have been investigated by various techniques. The crystal quality and structural properties of the surface for the ZnO epilayers were investigated by high-resolution X-ray diffraction and atomic force microscope. For investigating the optical properties of excitonic transition of ZnO, we carried out photoluminescence experiments as a function of temperature. The free exciton, bound exciton emission and their phonon replicas were investigated as a function of temperature from 10 to 300 K, and the intensity of excitonic PL peak emission from the sample A is found to be higher than that of sample B. From the results, we found that sample A has better crystal structure quality and optical properties as compared to sample B. The number of oxygen vacancies may be decreased in sample A, resulting in an enhancement of the crystal quality and a higher intensity of excitonic emission band as compared to sample B.
Study on the real-time measurement equipment for nanoparticle in low-pressure processes
Na, Jeong-Gil ; Cho, Dae-Geun ; Choi, Jae-Boong ; Kim, Young-Gin ; Kim, Tae-Sung ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 468~473
DOI : 10.5757/JKVS.2007.16.6.468
In this paper, we discussed about the development of the PBMS(Particle Beam Mass Spectrometer) that can measure the nanoparticles on real-time in low-pressure processes. To calibrate this equipment, a DMA(Differential Mobility Analyzer) was used to generate NaCl particles which are charged to +1. Total aerosols flow rate was 1 lpm and 0.086 lpm of that was introduced into the PBMS through the pressure-reducing critical orifice. Transport efficiency through PBMS was 50
60 % compared to particle current for DMA and PBMS according to the particle size. Results of mesurements are in good agreement with size distributions obtained by DMA.
Nanocrystalline Si formation inside SiN
nanostructures usingionized N
Jung, Min-Cherl ; Park, Young-Ju ; Shin, Hyun-Joon ; Byun, Jun-Seok ; Yoon, Jae-Jin ; Park, Yong-Sup ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 474~478
DOI : 10.5757/JKVS.2007.16.6.474
were made by bombardment of ionized
on Si surface and subsequent annealing. Atomic force micrograph showed the density of
. Their lateral size and height were 40
60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from
as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the
nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding
Investigation of InN nanograins grown by hydride vapor phase epitaxy
Jean, Jai-Weon ; Lee, Sang-Hwa ; Kim, Chin-Kyo ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 479~482
DOI : 10.5757/JKVS.2007.16.6.479
InN nanograins were directly grown on
-miscut (toward M-plane) c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) and their growth characteristics were investigated by utilizing x-ray scattering. Depending on the various growth parameters, the formation of InN was sensitively influenced. Six samples were grown by changing HCl flow rate, the substrate temperature and Ga/In source zone temperature. All the samples were grown on unintentionally
sapphire substrates. By increasing the flow rate of HCl from 10 sccm to 20 sccm, the formation of GaN grains with different orientations was observed. On the other hand, when the substrate temperature was raised from
, the increased substrate temperature dramatically suppressed the formation of InN. A similar behavior was observed for the samples grown with different source zone temperatures. By decreasing the source zone temperature from
, a similar behavior was observed.
Construction and Tests of the Vacuum Pumping System for KSTAR Current Feeder System
Woo, I.S. ; Song, N.H. ; Lee, Y.J. ; Kwag, S.W. ; Bang, E.N. ; Lee, K.S. ; Kim, J.S. ; Jang, Y.B. ; Park, H.T. ; Hong, Jae-Sik ; Park, Y.M. ; Kim, Y.S. ; Choi, C.H. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 483~488
DOI : 10.5757/JKVS.2007.16.6.483
Current feeder system (CFS) for Korea superconducting tokamak advanced research(KSTAR) project plays a role to interconnect magnet power supply (MPS) and superconducting (SC) magnets through the normal bus-bar at the room temperature(300 K) environment and the SC bus-line at the low temperature (4.5 K) environment. It is divided by two systems, i.e., toroidal field system which operates at 35 kA DC currents and poloidal field system wherein 20
26 kA pulsed currents are applied during 350 s transient time. Aside from the vacuum system of main cryostat, an independent vacuum system was constructed for the CFS in which a roughing system is consisted by a rotary and a mechanical booster pump and a high vacuum system is developed by four cryo-pumps with one dry pump as a backing pump. A self interlock and its control system, and a supervisory interlock and its control system are also established for the operational reliability as well. The entire CFS was completely tested including the reliability of local/supervisory control/interlock, helium gas leakage, vacuum pressure, and so on.
Simulation on the gas fueling for the base operation of the KSTAR tokamak
In, S.R. ; Kim, T.S. ; Jeong, S.H. ;
Journal of the Korean Vacuum Society, volume 16, issue 6, 2007, Pages 489~495
DOI : 10.5757/JKVS.2007.16.6.489
The assembly of the main system of the KSTAR tokamak has been recently completed, and the preparation for the 1st plasma and test operations is progressed. The fueling system established for these purposes uses only one port placed at the opposite side of the pumping duct, and has a difficulty of attaining a uniform and fast supply of fuel particles to the plasma. At the base operation stage after finishing the test operation, the fueling system must be improved to provide a uniform fueling and a feed-back control in accordance with a high-density tokamak plasma maintained for a long period. As a part for understanding the points to be improved in the fueling system, a Monte Carlo simulation on the gas fueling into the tokamak plasma has been executed. After modeling the vacuum vessel and the plasma of quasi-D shapes as tori of rectangular cross-sections, the influences of the position and the number of the fueling inputs on the particle density distribution for a given pumping probability and mean free path were investigated.