The different degrees of blackening were observed at the inner surface of borosilicate, soda-lime, and aluminosilicate glass tubes having different sodium (Na) contents. The sodium contents () within the borosilicate, soda-lime, and aluminosilicate glass tubes were found to be 4%, 14%, and 0.06%, respectively. The degree of blackening was shown to increase as the sodium content within the glass of the fluorescent lamp containing Ne+Ar+Hg gas mixture. Higher degree of blackening was observed from the inner surface of the glass tube coated with . The blackening was found to be originated from the amalgam of generated by the chemical reaction between the mercury ions within the discharge gas and sodium within the glass tube during operation.

The numerical simulation of point-to-plane discharge of nitrogen at medium pressure has been achieved by a quasi-2d numerical model. In the model, we calculate the distributions of electric charges which are varying as temporal and space and determine the electric field depending on space charge distribution by solving Poisson`s equation. The continuity equations are treated numerically by using FCT (Flux-Corrected Transport) Algorithm and FEM (Finite Element Method). The numerical simulation results make us to understand the physical characteristics of nitrogen discharge at 50 torr. The comparison with experimental results[1] shows a good qualitative agreement.

The amount of vapor mercury for the generation of glow discharge plasma has been calculated in a fine tube fluorescent lamp having a mixed gas of Ne+Ar including a mercury. When the ionization of atom is considered by the collision between neutral atoms (Ne, Ar, Hg) and electrons of energy , the density of vapor mercury atom has been obtained as for the plasma density . In the fluorescent lamps of out diameter 4 mm used for -inch LCD-TVs having a mixture gas of Ne(95%)+Ar(5%) with the pressure of 50 Torr, the quantity of vapor mercury for the glow discharge has been caculated as .

The stealth technology to conceal an aircraft from the vision of a radar have been accomplished by coating the surface with special paints absorbing the electromagnetic wave. Nowadays, researches to utilize characteristics of the plasma-wave interaction for realizing the stealth technology are actively progressed. In this paper, to investigate the physical feasibility of the plasma stealth, calculation results for the required conditions of the plasma cloaking on the aircraft flying in the air for showing the stealth function, using a flat non-magnetized non-uniform plasma model, are reported and discussed.

A quasi two-dimensional model for numerical simulation of gas discharge is presented, based on the finite-element flux-corrected transport method. A one-dimensional continuity convection-diffusion equation coupled Poisson`s equation is solved to calculate the charge density variation and the electric field is evaluated by the classical disk method. Results calculated for various benchmark problems verify the accuracy of the proposed model and illustrate its performance. This model has been applied to a streamer simulation, and the results are shown to agree well with previously published results.

The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below . Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.

GaAs/AlGaAs based quantum cascade lasers were fabricated with two different types of i) the shallow mesa type which was etched up to above active region and ii) the deep mesa type which was etched through active region. While the threshold current density of shallow mesa type was , the one of deep mesa type was reduced drastically up to . Such lowered threshold current density at deep mesa type attributed to the reduction of current loss to the lateral directions.

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm /single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from to in increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from . Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at .

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: ) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn(), reaction gas: ) at (in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, pulse-0.1 sec, purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some and uniform ZnO(thickness: ) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

At the semiconductor industry, Photoresist(PR) strip progress has high cost and time consuming process. Accordingly, many research group have been focused on the shortening of the PR strip progress. But the replacements of newly developed materials rather than normally used strip have accompanied by cost consumption. Therefore, we suggested the Plasma Liquid-Vapor Activation (PLVA) method of general PR strip solution for saving the PR strip time and the high strip rate of PR residue. The PLVA method was very effective for PR strip progress. Also, the ion damaged PR(high dose implanted photoresist: HDI-PR) was almost impossible to strip. However, it was very difficult to characterize the change of chemical composition of HDI-PR between with and without PLVA method. Thus, physical properties of HDI-PR surface with and without PLVA method were measured by using the nano-indenter system.

Nickel Chloride coated protein chip plates were developed by using a spin coating method after plasma treatment. The adsorption ability of histidine tagged protein was investigated at various times of plasma treatment. The properties of the nickel chloride and protein on the surface of the slides were assayed using particle size analysis and the extent of the protein adsorption was determined by using a bio imaging analyzer system. The results show that the ability of protein adsorption decreased as increasing the time of plasma treatment. The mechanism on the ability of protein adsorption at the plate surface is discussed on results and discussions. The results also suggest that the surface stabilization of protein chip plates treated by plasma technology may be applicable in biosensor markets.

Junction temperature of quantum dot laser diodes is investigated by utilizing forward voltage-temperature method. In the case of ridge type laser diodes with deep mesa the increasing rate of junction temperature to current is about 0.05 K/mA, while in the case of shallow mesa the increasing rate is about 0.07 K/mA. It is explained that the relatively low increasing rate in the deep mesa results from the heat expansion to the lateral direction of mesa.

(PLZT) thin films with buffer layers were deposited on Pt/Ti//Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of layers, thereby reaching their maximum at .

We investigated the field emission characteristics from the planar field emitters made of double-walled carbon nanotubes (DWCNTs) synthesized by a catalytic chemical vapor deposition (CCVD) method. Transmission electron microscopy, Thermogravimetric and Raman analysis showed that the carbon materials have a low defect level in their atomic carbon structure, pointing to the synthesis of high-purity DWCNTs. For field emission properties of DWCNTs, the turn-on field of DWCNTs was and the current density was about at , which is sufficient for the applications of field emission displays and vacuum microelectronic devices. The DWCNT field emitters also exhibited a uniform field emission pattern and good field emission stability in a diode configuration.

High-quality double-walled carbon nanotubes (DWNTs) were synthesized without defects and amorphous carbonaceous particles by catalytic decomposition method at in high yield. As-synthesized carbon materials almost consist of DWNT bundles with a diameter 12 - 20 nm.. The DWNTs rope have uniform diameter about 2 - 5 um and length up to several tens micrometer. DWNTs is inner tube diameter 0.9 - 1.5 nm and outer tube 1.6 - 2.2 nm. We investigate the crystallinity of DWNTs by TEM and Raman spectroscopy. We also found that the Fe-Mo bimetallic catalyst was active as a very efficient catalyst for the synthesis of DWNTs with the catalyst decomposition method. Our results also indicate that Tetra Hydro Furan (THF) is a very ideal carbon source for the synthesis of DWNTs.