Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 19, Issue 6 - Nov 2010
Volume 19, Issue 5 - Sep 2010
Volume 19, Issue 4 - Jul 2010
Volume 19, Issue 3 - May 2010
Volume 19, Issue 2 - Mar 2010
Volume 19, Issue 1 - Jan 2010
Selecting the target year
The Study of Pressure Vacuum Measurement Techniques Using Ultrasonic Acoustic Impedance Transducers
Hong, S.S. ; Shin, Y.H. ; Cho, S.H. ; Ahn, B.Y. ; Lim, J.Y. ; Choi, I.M. ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 319~325
DOI : 10.5757/JKVS.2010.19.5.319
Pressure vacuum measurement technique using acoustic impedance change of ultrasonic transducers was studied. The sensor has been setup using two air-coupled ultrasonic transducers, one as a transmitter and the other as a receiver, and put it into vacuum chamber and measured pressure versus ultrasonic amplitude. The result confirms that the standard deviations of four repeat measurements were from 0.0093 to 0.3325 at pressure 6.66 kPa to 202.65 kPa(about two atmosphere), and the relative percents were 0.018% and 0.164% at pressure 133.32 kPa and 202.65 kPa, respectively.
The Characteristic in Mg Alloy with Burning and Plasma Electrolyte Oxidation Surface Treatment
Yu, Jae-In ; Choi, Soon-Don ; Jang, Ho-Kyeoung ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 326~330
DOI : 10.5757/JKVS.2010.19.5.326
The surface oxidation of magnesium was performed by burning and PEO treatment method. The scanning electron microscopy (SEM), EDS, and I-V characteristics have been applied to the study of the oxidation status. The sample formed by buring method shows weaker corrosion-resistant property than that by PEO method, but this shows more conducting property.
Numerical Modeling of Very High Frequency Multi Hollow Cathode PECVD
Joo, Jung-Hoon ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 331~340
DOI : 10.5757/JKVS.2010.19.5.331
3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was
at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For
, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.
Anti-Reflection Coating Application of Si
Stacked-Layer Fabricated by Reactive Sputtering
Gim, Tzang-Jo ; Lee, Boong-Joo ; Shina, Paik-Kyun ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 341~346
DOI : 10.5757/JKVS.2010.19.5.341
In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of
thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and
gases were used as sputtering gases for reactive sputtering for the
thin film, and Ar and
gases were used for reactive sputtering for the
thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the
, and 1.94 and 1.8 [nm/sec] for the
thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the
stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.
Study on Availability about the Dielectric Constant of SiOC Thin Film
Oh, Teresa ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 347~352
DOI : 10.5757/JKVS.2010.19.5.347
To research the reduction of the dielectric constant depending on the ionic and electronic effects, the dielectric constant of SiOC film was obtained by C-V measurement using the structure of metal/SiOC film/Si, and
calculated by the refractive index. The dielectric constant of SiOC film consists with dipole, ions and electrons. However, the dipole moment is ignored in the effect of dielectric constant in SiOC film. THe SiOC film was deposited by the plasma energy, and the gas precursor was dissociated and recombined. Therefore, the dielectric constant of the deposited film consisted of the polarity with ions. THe dielectric constant decreased after annealing process, because of the evaporation of OH hydroxyl group with polarity. The ideal SiOC film as low-k materials was annealed film with lowering the polarity, which is suitable for physical-chemical and electrical properties as an inter layer dielectric materials.
Surface Photovoltage Characterization of In
Kim, Jeong-Hwa ; Kim, In-Soo ; Bae, In-Ho ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 353~359
DOI : 10.5757/JKVS.2010.19.5.353
We report the surface photovoltage (SPV) properties of
/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and
transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.
The Measurement Errors of Elastic Modulus and Hardness due to the Different Indentation Speed
Lee, Kyu-Young ; Lee, Chan-Bin ; Kim, Soo-In ; Lee, Chang-Woo ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 360~364
DOI : 10.5757/JKVS.2010.19.5.360
Most research groups used two analysis methods (spectroscopy and nanotribology) to measure the mechanical properties of nano-materials: NMR (Nuclear Magnetic Resonance), IR (Infrared Spectroscopy), Raman Spectroscopy as the spectroscopy method and AFM (Atomic Force MicroScope), EFM (Electrostatic Force Microscope), KFM (Kelvin Force Microscope), Nanoindenter as the nanotribological one. Among these, the nano-indentation technique particularly has been recognized as a powerful method to measure the elastic modulus and the hardness. However, this technique are prone to considerable measurement errors with pressure conditions during measurement. In this paper, we measured the change of elastic modulus and hardness of an Al single crystal with the change of load, hold, and unload time, respectively. We found that elastic modulus and hardness significantly depend on load, hold, and unload time, etc. As the indent time was shortened, the elastic modulus value decreased while the hardness value increased. In addition, we found that elastic modulus value was more sensitive to indent load, hold, and unload time than the hardness value. We speculate that measurement errors of the elastic modulus and the hardness originate from the residual stress during indenting test. From our results, the elastic modulus was more susceptible to the residual stress than the hardness. Thus, we find that the residual stress should be controlled for the minimum measurement errors during the indenting test.
Growth Interruption Effects of GaAs/AlGaAs Quantum Wells Grown by Molecular Beam Epitaxy
Kim, Min-Su ; Leem, Jae-Young ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 365~370
DOI : 10.5757/JKVS.2010.19.5.365
The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/
multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper.
Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy
Cho, Min-Young ; Kim, Min-Su ; Leem, Jae-Young ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 371~376
DOI : 10.5757/JKVS.2010.19.5.371
The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of
in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were
, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is (
). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.
Synthesis of High-Quality Single-Walled Carbon Nanotube Fibers by Vertical CVD
Kim, Tae-Min ; Song, Woo-Seok ; Kim, Yoo-Seok ; Kim, Soo-Youn ; Choi, Won-Chel ; Park, Chong-Yun ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 377~384
DOI : 10.5757/JKVS.2010.19.5.377
Many routes have been developed for the synthesis of signle-walled carbon nanotubes (SWCNTs). We spun fibers of SWCNTs directly from vertical furnace using a liquid source of carbon and an iron-contained molecule. The solution was prepared by ethanol as a carbon source, in which ferrocene as a catalyst, thiophene were dissolved. It was then injected from the top of the furnace into hot zone with hydrogen as a carrier gas. We successfully synthesized high-quality SWCNTs by adjusting the various experimental conditions, such as concentration of ferrocene, solution injection rate, concentration of thiophene, and hydrogen flow rate. Measurement of Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy were carried out to find the optimized conditions. The synthesized SWCNTs (1.16~1.64 nm) appeared a bundle structure and well-aligned parallel to the direction of furnace. These results also provide an simple way for high-quality SWCNTs mass production and fabricating direct spining SWCNTs fiber. It will allow one-step production of SWCNTs fiber with potentially excellent properties and wide-range applications.
Optical Properties of Al and Al
Coated ZnO Nanorods
Shin, Y.H. ; Lee, S.Y. ; Kim, Yong-Min ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 385~390
DOI : 10.5757/JKVS.2010.19.5.385
We studied the optical characteristics of ZnO:Al and
coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.
Study on the pn Junction Device Using the POCl
Oh, Teresa ;
Journal of the Korean Vacuum Society, volume 19, issue 5, 2010, Pages 391~396
DOI : 10.5757/JKVS.2010.19.5.391
The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the
and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.