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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
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Volume & Issues
Volume 2, Issue 4 - Dec 1993
Volume 2, Issue 3 - Sep 1993
Volume 2, Issue 2 - Jun 1993
Volume 2, Issue 1 - Mar 1993
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Growth Mode Study of Mg on the Si(111)
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 399~403
The Effect of Defect Sites on the Dissociation of NO on PT(111) Surface
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 404~409
Adorption of nitric oxide on the Pt(III) surface sputtered by Ar-ion has been studied using thermal desorption spectroscopy and Auger electron spectroscopy. Ar-ion sputtering creates a precursor state of (
stage) adsorbe dat defect sites. The precursor state is characterized by the terminal bent species . At low coverge mos 샐 adsorbed NO dissociates . And as increasing the coverage, the fraction of dissociation remains about 80%.
OMVPE System and ARIIV Reactor Chamber
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 410~415
The direct growth OMVPE system, designed specificallyfor direct growth of Hg1-xCdxTe using annular rectant inlet inverted verticla (ARIIV) reactor, was constructed. This paper presents the detailed technical approach on a newly designed ARIIV reactor that increases Hg incorporation, imposes uniformity, and avoids the needs for temperature processing to create alloys by inter diffusion approach.
Hydrogen Depth Profiling by Nuclear Resonance Reaction
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 416~423
Hydrogen depth profiling was performed by H(19F,
) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The
rays produced by the reaction were measure dby 3"
3" and 6"
8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.
MOCVD Growth of AlGaAs/InGaAs/GaAs Pseudomorphic Structures and Transport Properties of 2DEG
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 424~432
AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at
. Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized .
-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated
gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.
Fabrication of Metal-based and AIGaAs/GaAs-based Mesoscopic Ring Structures and Characterization of their Quantum Interference Phenomena
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 433~438
Phase sequence in Codeposition and Solid State Reaction of Co-Si System and Low Temperature Epitaxial Growth of
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 439~454
The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at
. Parameters, Ear,
(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.
A Study on the Magnetic Properties of Permalloy Thin Films
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 455~461
Room Temperature Fabrication of Silicon Oxide Thin Films by ECR PECVD
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 462~467
Annealing Behavior of Ar Implant Induced Damage in Si
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 468~473
Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1
1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1
1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110
a few damage clusters still remained.
Filling the Submicron Contact Holes with Al Alloys
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 474~479
Submicron contact hole filling with aluminum alloys has been achieved with a multistep metallization method, which utilizes a metal " flow" or self-diffusion process at elevated temperatures after the metal was sputter-deposited. A multi-chamber, modular sputtering system was employed to deposit aluminum alloys and subsequently to anneal the deposited metal films under vacuum at high temperatures. The film were deposited on 200 mm wafers with planar, dc magnetron sputtering sources without anysubstrate bias. The basic process steps studied for the multistep metallization include an initial layer deposition at low temperatures less than
, and an annealin gstep at elevated temperatures, between 450 and
. The degree of planarization or step coverage was dependent strongly upon the temperature and time of the flow step and complete filling of the submicron contacts with aluminum alloys was achieved. Responsible mechanisms for the enhancement in step coverge and factros determining uniform and reproducible flow of aluminum alloys during the high temperauture step are discussed.discussed.
Design of a Large Magnetron Sputtering System for TFT LCD and Investigation of Sputtered AI Film Properties
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 480~485
Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400
400mm. The temperautre uniformity of a heater table developed showed
5% accuracyon the substrate glass. A base pressure of 1.8
10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.
Optical Properties of Undoped and Co-doped
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 486~490
Cd4SnSea6 & Cd4SnSe6 : Co2+ single crystals were grown by the chemical transport reaction (CTR) method. The grown single crystlas crrystallize in the monoclinic structrue and have the direct band gaps. The energy gaps of them are 1.68eV for Cd4SnSea6 & Cd4SnSe6 : Co2+ at 293K. The impurity opticla absorption peaks due to cobalt dped with impurity appear at 4879cm-1, 5392cm-1 and 6247 com-1, and are attributed to the electron transitions between the split energy levels of Co2+ ion sited at Td symmetry of Cd4SnSe6 single crystal.
Characterization of the Microporosity of Activated Carbon Fiber
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 491~500
The adsorption of nitrogen (77K) and carbon dioxide(273K) was performed on a series of activated carbon fiber. Theadsorption iotherm of nitrogen was typical type 1 and that of carbon dioxide was convex. As the specific surface area increases, there are linear increases in BET constant C mean pore diameter, the width of pore size distribution, wide micropore volume, total micropore volume, total pore volume and external surface area, however, narrow micropore volume was nealy constant . The total micorpore volume fraction in total pore volume is above 97%.
The Effect of Substrate DC Bias on the Low -Temperature Si homoepitaxy in a Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 501~506
The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma
strate boundary along themagnetric field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below
) is examine dby in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM),plan-view TEM and high resolution transmision electron microscopy(HRTEM). While the polycrystalline silicon layers are grow withnegative substrate biases, the single crystaline silicon layers are grown with negative substrate biases, the singel crystalline silicon layers are grown with positive substrate biases. As the substrate bias changes form negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below
Silicide Formation by Solid State Diffusion in Mo/Si Multilayer Thin Films
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 507~514
The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.
Dynamic LEED System Developed by Using Image Precessing
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 515~519
Image processin software is developed to get spot intensity form the frame of a LEEd pattern obtained by using a CCD Camera and a frame grabber. Imporved algorithm for more reasonable background substraction is implemented in this software . I/V Charateristicsof some spots form Cu(001) suface are collected . These results are compared with those of Davis and Noonan and found to be consistent with the latter results. This software is also applied to meausre RHEEd spot intensity oscillatin, and gives clear oscillations very easily.
High Energy SCattering을 이용한 표면분석
Journal of the Korean Vacuum Society, volume 2, issue 4, 1993, Pages 520~524