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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
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Volume & Issues
Volume 21, Issue 6 - Nov 2012
Volume 21, Issue 5 - Sep 2012
Volume 21, Issue 4 - Jul 2012
Volume 21, Issue 3 - May 2012
Volume 21, Issue 2 - Mar 2012
Volume 21, Issue 1 - Jan 2012
Selecting the target year
Study on the Thermal Dissipation Characteristics of 16-chip LED Package with Chip Size
Lee, Min-San ; Moon, Cheol-Hee ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 185~192
DOI : 10.5757/JKVS.2012.21.4.185
p-n junction temperature and thermal resistance of Light Emitting Diode (LED) package are affected by the chip size due to the change of the thermal density and the external quantum efficiency considering the heat dissipation through conduction. In this study, forward voltage was measured for two different size LED chips, 24 mil and 40 mil, which consist constitute 16-chip package. p-n junction temperature and thermal resistance were determined by thermal transient analysis, which were discussed in connection with the electrical characteristics of the LED chip and the structure of the LED package.
Effect of Diamond-Like Carbon Passivation on Physical and Electrical Properties of Plasma Polymer
Park, Y.S. ; Cho, S.J. ; Boo, J.H. ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 193~198
DOI : 10.5757/JKVS.2012.21.4.193
In this study, we have fabricated the polymer insulator and diamond-like carbon (DLC) thin films by using plasma enhanced chemical vapor deposition methods. we fabricated the DLC films with various thicknesses as the passivation layer on plasma polymer and investigated the structural, physical, and electrical properties of DLC/plasma polymer films. The plasma polymer synthesized in this work had the low leakage current and low dielectric constant. The values of hardness and elastic modulus in DLC/plasma polymer films are increased, and the value of rms surface roughness is decreased, and contact angle value is increased with increasing DLC film thickness. In the electrical properties of DLC/plasma polymer, the value of the dielectric constant is increased, however the leakage current property of the DLC/plasma polymer is improved than that of plasma polymer film with increasing DLC film thickness.
A Study on Etching of Si
Thin Film and the Exhausted Gas Using C
Gas for LCD Process
Jeon, S.C. ; Kong, D.Y. ; Pyo, D.S. ; Choi, H.Y. ; Cho, C.S. ; Kim, B.H. ; Lee, J.H. ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 199~204
DOI : 10.5757/JKVS.2012.21.4.199
gas is widely used for dry etching process of semiconductor and display fabrication process. But
gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to
alternatives reducing greenhouse effect in semiconductor and display.
gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A.
thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of
thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.
Optical and Hydrophobic Properties of Ag Deposited ZnO Nanorods on ITO/PET
Ko, Yeong-Hwan ; Kim, Myung-Sub ; Yu, Jae-Su ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 205~211
DOI : 10.5757/JKVS.2012.21.4.205
We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.
Crystallization and Optical Properties of Transparent AZO Thin Films
Oh, Teresa ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 212~218
DOI : 10.5757/JKVS.2012.21.4.212
The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of
and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.
Long-Term Performance of Amorphous Silicon Solar Cells with Stretched Exponential Defect Kinetics and AMPS-1D Simulation
Park, S.H. ; Lyou, Jong-H. ;
Journal of the Korean Vacuum Society, volume 21, issue 4, 2012, Pages 219~224
DOI : 10.5757/JKVS.2012.21.4.219
We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness
300 nm, built-in potential
1.05 V, defect density (at t