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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 4, Issue 4 - Dec 1995
Volume 4, Issue S2 - Jun 1995
Volume 4, Issue 3 - Jun 1995
Volume 4, Issue 2 - Jun 1995
Volume 4, Issue 1 - Mar 1995
Volume 4, Issue S1 - Feb 1995
Selecting the target year
Interface Characteristics of Ion Beam Mixed Cu/polyimide system
G.S.Chang ; Jung, S.M. ; Lee, Y.S. ; Park, I.S. ; Kang, H.J. ; J.J.Woo ; C.N.Whang ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 1~7
)/Polyimide has been mixed with 80 keV Ar+ and N2+from 1.0X1015ions/
to 2.0X1016 ions/
. The changes of chemical bond and internal properties of sample are investigated by X-ray photoelectron spectroscopy(XPS). The quantitative adhesion strength is measured by using scratch test. The optimized mixing condition is that Cu/PI is irradiated with 80 keV N2+ at a dose of 1.0X1015 ions/
, because N2+ ions can product more pyridine-like moiety, amide group, and tertiary amine moiety which are known as adesion promoters than Ar+
Surface Modification of Titanium Based Biomaterials by Ion Beam
Liu, Xianghuai ; Huang, Nan ; Yang, Ping ; Cai, Guanjun ; Chen, Yuanru ; Zheng, Zhi hong ; Zhou, Zhuyao ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 8~19
Ion beam enhanced deopsition(IBED) was adopted to synthesize biocompatible titanium oxide film. Structure characteristics of titanium oxide film were investigated by RBS, AES and XRD. The blood compatibility of the titanium oxide film was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide film is improved significantly. The mechanism of anticoagulation of the titanium oxide film was discussed.
SHANGHAI INSTITUTE OF METALLURGY--FACING THE WORLD
He, L. ; Fu, L.P. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 20~23
Shanghai Institute of Metallurgy(SIM), Chinese Academy of Sciences is a multioriented applied science reaearch institution that was founded in 1928. The current principal research activities of SIM cover three areas, namely, microelecronics, functional materials and devices, corrosion and protection of metals. The general information of SIM, includes history, personnel, organization, etc., is provided. The main research laboratories and R&D themes are introduced also. SIM has made great contributions to the economic construction and development of science and technoloty of the nation. China is facing a golden opportunity for development and SIM is playing an important role in translating research results into large-scale, commercial productions. Several successful examples are shown. SIM has been active in promoting international collaboration in research and development. The international cooperative projects in SIM are reviewed. SIM is facing the world, and going toward the 21st century.
MAGNETIC AND MAGNETO-OPTICAL PROPERTIES OF Co-BASED MULTILAYERED FILMS PREPARED BY ELECTRON-BEAM EVAPORATION
Lee, Y.P. ; Lee, B.J. ; Park, H.K. ; Kim, S.K. ; Kang, J.S. ; J.I.Jeong ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 24~29
The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.
STUDY OF MULTILAYER STRUCTURE USING X-RAY DOUBLE CRYSTAL DIFFRACTION
Wu, Yunzhong ; Xu, Xueming ; Wang, Weiyuan ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 30~33
By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and
substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.
Ion Shower Doping Effect in Diamond and Diamond-Like Carbon Films
Jin Jang ; Chun, Soo-Chul ; Park, Kyu-Chang ; Kim, Jea-Gak ; Moon, Jong-Hyun ; Park, Jong-Hyun ; Song, Kyo-Jun ; Lee, Seung-Min ; Oh, Myung-Hwan ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 34~39
we have studied the possibility of n-type doping in diamond and DLC films. After ion doping of either p-type or n-type, the electrical conductivities were remarkably increased and conductivity activation energies were decreased. The Raman intensity at 1330 cm-1 decreases slightly by ion doping of
. The increase in conductivity by ion doping appears to be arised from the combined effects by substitutional doping and graphitization by ion damage.
MICROSTRUCTURE AND TRIBOLOGY OF
-TiN DOUBLE-LAYER COATINGS
Yang, Yunjie ; Chen, Lizhi ; Zheng, Zhihong ; Wang, Xi ; Liu, Xianghuai ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 40~48
-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the
layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline
with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the
films increases with increasing ion energy, and approaches a maximum value of the
films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the
films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer
/TiN coatings and TiN/
coatings. Both show an improved wear resistance compared with single-layer
films. The adhesion of double-layer coatings is also superior to that of single-layer films.
Surface Treatment of Steel by Plasma Boronizing
Lee, G.H. ; Na, K.S.m ; Kwon, S.C. ; Kim, S.K. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 49~57
At present the processes of boronizing have been mostly studied in a plasma from gaseous compounds containing the impregnating element and are in an industrial use. These have been investigated by a variety of works in a glow discharge with different mixture ratios of
as well as
. The active atomosphere has been diluted by Ar or some other inert gas in order to enhance control of boron potential and to reduce the ignition voltage of the glow discharge. The Control of gaseous atomosphere is essential to a boride layer in plamsa boronizing treatment. The boride formation is required to make the workpiece surface saturated with boron content. The present study considers the efficiency of plasma boronizing reactions and the morphology of boride layer under various plasma conditions
PROPERTIES OF PLASMA SPRAYED COATINGS
Ding, C.X. ; Zhang, Y.F. ; Xia, J.Y. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 58~63
Plasma spray has attracted attention as an effective method for obtaining protective coatings. In this paper, the physical, mechanical and thermal properties of coatings are reviewed. The microstructural features of the coatings are described. The relationship between the properties of coatings and their microstructure is also discussed. Plasma sprayed coatings are used to reduce wear and improve thermal protection on a large number of components in various industries. In some cases, the conditions of application are very aggressive and therefore the resulting maintenance costs are expensive. Improved coating materials and appropriate properties of coatings are the most promising ways to solve these problems[1,2]. The optimum coating properties depend on the microstructure of coatings[1-5]. In this paper, some ceramic coatings frequently used in industries were reported. The physical, mechanical and thermal properties of ceramic coatings are reviewed. The microstructure features of coatings are addressed. The relationship between the microstructure of coatings and their properties are discussed.
ADDITION ON THE STRUCTURES OF SILICON FILMS DEPOSITED AT LOW TEMPERATURE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Xiaodong Li ; Park, Young-Bae ; Kim, Dong-Hwan ; Rhee, Shi-Woo ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 64~68
Silicon films were deposited at
by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of
. The silicon films deposited without and with
were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with
exhibits more rugged. The silicon film deposited without
is amorphous, whereas the silicon film deposited with
is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with
was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of
during RPECVD was discussed.
Effects of TCA Incorporation During Annealing Process on the Properties of Oxygen Ion Implanted Silicon Wafers
Bae, Y.H ; Kwon, Y.K. ; Kim, K.I. ; Chung, W.J. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 69~74
The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at
for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.
High Performance InAIAs/InGaAs Metal-Semiconductor-Metal Photodetectors Grown by Gas Source Molecular Beam Epitaxy
Zhang, Y.G. ; Chen, J.X. ; Li, A.Z. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 75~78
Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of
at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.
The Properties of Nitrogen Implanted Tungsten Diffusion Barrier for Cu Metallization
Kim, D.J. ; Kim, D.J. ; Kim, Y.T. ; Lee, J.Y. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 79~82
beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~
. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range
for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.
CHARACTERISTICS OF THE HETEROEPITAXIAL Si1-xGex FILMS GROWN BY RTCVD METHOD
Chung, W.J. ; Kwon, Y.K. ; Y.H.Bea ; Kim, K.I. ; Kang, B.K. ; Sohn, B.K. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 84~89
The growth and the film characteristics of heteroepitaxial
films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of
gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as
, and the composition ratios change linearly with
gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm
source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200
EFFECTS OF Si, Ge PRE-IMPLANT INDUCED DEFECTS ON ELECTRICAL PROPERTIES OF P+-N JUNCTIONS DURING RAPID THERMAL ANNEALING
Kim. K.I. ; Kwon, Y.K. ; Cho, W.J. ; Kuwano, H. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 90~94
Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.
keV SURFACE MODIFICATION AND THIN FILM GROWTH
Koh, Seok-Keun ; Park, Won-Kook ; Youn, Young-Soo ; Song, Seok-Kyun ; Cho, Jun-Sik ; Kim, Ki-Hwan ; Jung, Hyung-Jin ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 95~99
keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric
films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric
films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with
irradiation and to 8 degree with
irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.
Improvement of wear resistance of Zircaloy-4 by nitrogen implantation
Han, Jeon G. ; Lee, Jae s. J ; Kim, Hyung J. ; Keun Song ; Park, Byung H. ; Guoy Tang ; Keun Song ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 100~105
Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of
at various temperatures between
. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above
as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400
of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760
. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.
SURFACE PROCESSING OF TOOLS AND COMPONENTS BY MEVVA SOURCE ION IMPLANTATION
Lin, W.L. ; Sang, J.M. ; Ding, X.J. ; Yuan, X.M. ; Xu, J. ; Zhang, H.X. ; Zhang, X.J. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 106~114
Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.
Formation and Growth of Cu Nanocrystallite in Si(100) by ion Implantation
Kim, H.K. ; Kim, S.H. ; Moon, D.W. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 115~130
In order to produce Cu nanocrystallite in silicon wafer, the implantation technique was used. The samples of silicon (100) wafers were implanted by
ions at 100 keV and with varying the doses at room temperature. Post-annealing was performed at
with Ar environment. To investigate the formation of Cu nanocrystallite with ion doses and growth process by thermal annealing, SIMS and HRTEM(high resolution transmission electron microscopy)spectra were studied.
THE NEW TYPE BROAD BEAM ION SOURCES AND APPLICATIONS
You, D.W. ; Feng, Y.C. ; Wang, Y. ; Kuang, Y.Z. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 131~138
The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC,
Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/
)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.
MOLECULAR DYNAMICS SIMULATION OF THE INTERACTION BETWEEN CLUSTER BEAMS AND SOLID SURFACES
Kang, Hee-Jae ; Lee, Min-Wha ; Whang, Chung-Nam ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 139~147
The mechanism of the ionized cluster beam deposition has been studied using Molecular Dynamics Simulation. The Embedded Atom Method(EAM) potential were used in the simulation. The impact of a Au95-cluster on Au(100) substrate was studied for the impact energies 0.15-10eV/atom. The dependency of the impact energy of cluster beam was observed. For the cluster energy impact of 10eV per atom, the defects on surface were created and the cluster embedded into substrate as an amorphous state. For the energy of 0.5eV per atom, the defect free homoepitaxial growth was observed and atomic scale nucleation was formated, which are in good agreement with experiment. Thus molecular dynamics simulation is very useful to study the mechanism of the ionized cluster beam deposition.
SYNTHESIS OF METASTABLE ALLOYS BY ION MIXING IN THE BINARY METAL SYSTEMS AND THEORETICAL MODELLING
Liu, B.X. ; Zhang, Z.J. ; Jin, O. ; Pan, F. ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 148~155
(1) The metastable crystalline(MX) phases formed by ion mixing are classified into 5 types, i.e. the super-saturated solid solutions and the enlarged HCP-I phases reported earlier, and the newly observed FCC-I phases in hcp-based alloys, The FCC-ll and HCP-ll phases in bcc-based alloys. The growth kinetics of the MX phases is discussed. (2) The interfacial free energy in the multilayered films was found to play an important role in ion beam mixing(IM) induced amorphization. By adding sufficient interfaces, amorphous alloys were obtained even in the systems with rather positive heat of formation. (3) Gibbs free energy diagrams of some representative systems were constructed, by calculating the free energy curves of all the competing phases. Steady-state thermal annealing was conducted and the results confirmed the relevance of the constructed diagrams, which were inturn employed to interpret the MX phase formation as well as the glass forming ability upon IM in the binary metal systems.
STIMULATING NEURAL ELECTRODE-A STUDY ON CHARGE INJECTION PROPERTIES OF IRIDIUM OXIDE FILMS
Lee, In-Seop ; Ray A. Buchanan ; Jim M.Williams ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 156~162
For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.
Investigation of Some Hard Coatings Synthesized by Ion Beam Assisted Deposition
He, Jian-Li ; Li, Wen-Zhi ; He, Xial-Ming ; Liu, Chang-Hong ;
Journal of the Korean Vacuum Society, volume 4, issue S2, 1995, Pages 163~169
Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more
bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be