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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
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Volume & Issues
Volume 5, Issue 4 - Dec 1996
Volume 5, Issue 3 - Sep 1996
Volume 5, Issue 2 - Jun 1996
Volume 5, Issue 1 - Mar 1996
Selecting the target year
XPS Analysis of PZT film prepared by MOCVD
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 93~98
Thin films of Lead Zirconate Titanate,
(PZT), were grown on
by metalorganic chemical vapor deposition(MOCVD). These films were analyzed with X-ray Phptoemission Spectroscopy(XPS) for determining their chemical composition and chemical bonding characteristics. It was found that the chemical compositions and chemical bondings of ions in the near surface are different from those in the bulk region of the films. The oxidation state of Ti ions in the bulk region is reduced in comparison to that of Ti ions ini the surface region of the films and Pb enrichment in the surface region was also observed. Pb ions in the surface region exists mainly in the form of
(oxygen-chemisorbed lead), but Pb ions in the bulk region exists in the form of mixture of PbO and
Application of Regularization Method to Angle-resolved XPS Data
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 99~106
Two types of regularization method (singular system and HMP approaches) for generating depth-concentration profiles from angle-resolved XPS data were evaluated. Both approaches showed qualitatively similar results although they employed different numerical algorithms. The application of the regularization method to simulated data demonhstrates its excellent utility for the complex depth profile system . It includes the stable restoration of depth-concentration profiles from the data with considerable random error and the self choice of smoothing parameter that is imperative for the successful application of the regularization method. The self choice of smoothing parameter is based on generalized cross-validation method which lets the data themselves choose the optimal value of the parameter.
Surface Analysis of PZT Film Prepared by Sputting Method
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 107~112
Thin films of
)PZT) were grown on
at various temperatures by RF magnetron sputtering method. Surface morphology of these films were studied by using Atomic Force Microscopy(AFM). These films were also analyzed by using Atomic Force Microscopy(AFM). These films were also analyzed by using X-ray photoemission spectroscopy(XPS) for determining their chemical composition and their depth profile. It was found that the films grown at the substrated temperature of
have much more smooth surface characteristics in comparison to those films grown at room temperature, which may be explained in terms of surface mobility of ad-atoms such as Pb. It was also found that Pb enrichment in the near surface region enhanced for the films grown at higher substate temperature.
Fabrication of Self -aligned volcano Shape Silicon Field Emitter
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 113~118
Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the
, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the
layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.
Structural and Optical Preperties of RF Magnetron Sputtered Yttria-Stabilized Zirconia Thin Films
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 119~126
The effect of the
concentration in the sputtering gas mixture, substate temperature and Ar pressure on the structural and optical properties of 3 mol% YSZ and 8 mol% YSZ thin films deposited by RF magnetron sputtering were investigated . The films were observed to have various crystal structures with different compositions in accordance with the type of the target materials. The size of fine grain-like particles decreased wiht increasing the
concentration in the sputtering gas in the case of 3mol% YSZ, while it increased in the case of 8 mol% YSZ . However, the average opticla transmission of 8mol% YSZ, despite of thicker thickness. was higher than that of 3 mol% YSZ. Furthermore, the values of refractive index of 3mol% YSZ increased with increasing the
concentration in the sputtering gas on the contrary to those of the 8 mol% YSZ. However, the transmission spectra of 8 mol% YSZ films were not strongly influenced by the substrate temperature and Ar pressure, whereas the refractive index of the YSZ films were strongly affected by the sputtering parameters.
A Study on Photoreflectance in
(x=0.02) Epilayer Grown by MBE
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 127~132
We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at
below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.
Single Source Chemical Vapor Deposition of Epitaxial Cubic SiC Films on Si
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 133~138
Epitaxial cubic silicon carbide films have been deposited on carbonized Si(001) substrates using the single precursor 1, 3-disilabutane in the temperature range 900-
under high vacuum conditions. The films grown were characterized by in situ RHEED, XPS, XRD, x-ray pole figure, SEM, and TEM. The results show that epitaxial cubic SiC films with smooth morphology and good crystallinity were formed in this temperature range. The single precursor 1, 3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on Si(001) substrates.
Preparation of Transparent and Conducting
Thin Films by RF Magnetron Sputtering Method
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 139~146
Transparent and conducting Sb-doped
thin films were prepared by rf magnetron sputtering technology. But it showed a serious damage phenomenon on the surface of as-deposited films. In order to avoid a damage caused in the substrate center and location facing to target erosion, a ring plate of masking glass was installed at 1.5 cm above target surface. The uniformity and electrical characteristic of
thin films were evaluated by the control of optimal conditions in the magnetron sputtering operation such as rf power, sputtering gas pressure, and substrate temperature. In the experimental results using the operating conditions, the optimum temperature, which produced uniform and damageless films, shifted with the change of gas pressure. The rate was about
/5 mTorr at rf power of 50 W Similarly, the optimum temperature in compensation for an increase of rf power shifted down to a proper rate.
Optical Properties of
Films with Different Diffusion Barrier Layers
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 147~155
Optical properties of
films have been changed with the diffusion barrier metal M. Optimum opticla properties of
as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al.
film, which was fabricated by sputtering of 18 nm-thick
and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.
The Study on the Purity Dependence of the Curie Point and the Critical Exponent of Ferromagnetic Nickel by the Measurements of AC Resistivity
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 156~160
The purity dependence of the Curie point and the critical exponent of heat capaicty has been studied by measuring the resistvity of nickel samples with several different purities. The resistivity was measured by the 4-point ac method with a lock-in amplifier. The Curie points determined from in-phase and out-of-phase signals were found to be consisten twith each other . We found that the Curie point and the critical exponent of heat capacity did not depend on the purity of samples.
Dielectric Passivation Effects on the Electromigration Phenomena for the Improvement of Microelectronic Thin Film interconnection Materials
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 161~168
For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the
layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/
dielectric passivation layers showed longer lifetime than
dielectric passivation layers. This results from the PSG on
layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.
Effect of the Radical Loss Control by the Chamber Wall Heating on the Highly Selective
Journal of the Korean Vacuum Society, volume 5, issue 2, 1996, Pages 169~174
The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective
etching. In this study, to improve the
etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.