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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 5, Issue 4 - Dec 1996
Volume 5, Issue 3 - Sep 1996
Volume 5, Issue 2 - Jun 1996
Volume 5, Issue 1 - Mar 1996
Selecting the target year
Measurement of Real Outgassing Rate using Double Conductance Method
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 175~180
Double conductance method is proposed as an effectvie way to measure real outgassing rates of materials regardless of their adsorbing power. The real outgassing rate and the sticking coefficient of the CFC (carbon fiber composite) which is used widely as the material for armor plates infusion experiment devices were obtained by adopting this method. At
the real ougassing rate was
equivalent), which was higher than 5 times the measured one, and the sticking coefficient was about 0.018(
were the main residual gases).
Establishment of Low Vacuum Standard in the 1 to
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 181~187
The Ultrasonic Interferometer Manometer(UIM) which can calibrae from1 Pa to
Pa has been developed, and its uncertainty is evaluated less than
(30ppm of pressure+12mPa). We can calibrate Capacitance Diaphragm Gauge(DCG) used as a transfer standard gauge in the low vacuum field. TheUIM enables to maintain the measurement traceability for industries. In order to improve the UIM's accracy, we will perform the international intercomparison withother national standards laboratories.
Characteristics of Display -type Spherical Mirror Analyzer
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 188~193
A new display -type spherical mirror analyzer has been characterized in terms of the performance and the auger spectra taken by using it. The final goal with the analyzer is to devleop SET(Surface Electron Spectroscopic Tomography) which is capable to provide a 3-dimensional layer-by-layer information nondestructively. This kind of analyzer was originally designed by H.Daimon. The main feature is to display 2-dimensional electronic structures directly onto a screen. In our case, an external micro-electron beam was employed as an excitation source. However, this invokes various problems because of the interference between the electron beam and the analyzer. The problems have been solved through the optimization of various parameters of the analyzer.
Electronic Structure, Bonding and Kithium Migration Effects of the Mixed Conductor
Jang, Gun-Eik ; I.M Curelaru ;
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 194~198
Detailed expermental studies of theelectronic structure of the valence and conduction bands of the mixed conductor
-LiAlindicate that a quasi-gap opens at the Fermi level, and the conduction states are highlylocalized, as opposed to the theoretical band structure calculations that predict predominant metallic behavior. Evidence for complex lithium migration effects involving the surface of Lial , induced by particle (electron or ion) bombardment and mechanical treatment , has been obtained as a byproduct of these experiments.
Facet Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 199~205
InGaAs eqitaxial layers have been selectively grown on patterned GaAs(100) substrates by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn), and unprecracked monoethylarsine (MEAs). Facet growth of InGaAs epilayers has also been investigated at the various growth temperatures and Si4N4 dielectric pattern directions. In  jirection of mask, the change from (311), (377) and (111) facets to (311) facet with increasing growth temperature was observed. In  direction, however, the change from (011) and (111) facets to (111) facet with increasing growth temperature was observed. These results are attributed to the sidewall growth caused by different surface migration lengths of reactants. The formation of U-shaped (100) top surface is also discussed in terms of dangling bond model.
Iattice matched to Inp substrate by low pressure metalorganic chemical vapor deposition
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 206~212
epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of
epitaxial layer was affected by lattice mismatch, growth temperature and
ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the
was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of
epitaxial layers. At optimized growth condition, it was possible to obtain a high quality
epilayers with a electron concentration as low as
and an electron mobility as high as 11,000
/Vsec at room temperature.
Optical Preperties of HgS and HgS : Co Crystals and Films
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 213~217
HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant
for HgS and
for HgS and
for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.
Study on Structural properties of As Ion -Implanted Si
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 218~222
STrained layers and strain depth profile of high dose As ion implanted (100) si wafer annealed at various temperatures have been investigated by means of X-ray double crystal diffractometry (X-ray DCD). The results obtained by x-ray rocking curve analysis showed a defect layer at the original amorphous /crystalline interface of 1400
depth. In addition arsenic ion concentrtion profiles and defect distributions in depth were obtained by the SIMS and TRIM -code simulation . the positive strain depth profile determined from the rocking curve analysis were only presented under 0.14
m from the surface for samples ananelaed at
. The results was shown that the thickness of amprphous layer is 0.14
m indirectry, and it was good agreement with the TRIM -Code simulation. Additionally, it could be thought that the positive strain have been affected residual intersitial atoms under the amorphous/crystalline interface formed by ion implantation.
Electrical properties of
/InSb prepared by low temperature remote PECVD
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 223~228
insulator layers on InSb have been prepared by remote PECVD system a low temperature below
. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the
were studied. The InSb MIS device using
was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/
at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was
A Study on the Electromigratin Phenomena in Dielectric Passivated Al-1Si Thin Film Interconnections under D.C. and Pulsed D.C.Conditions.
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 229~238
The electromigration phenomena and the characterizations of the conductor lifetime (Time-To-Failure, TTF) in Al-1%Si thin film interconnections under D.C. and Pulsed D.C. conditions were investigated . Meander type test patterns were fabricated with the dimensions of 21080
thickness and the 0.1
/PSG)dielectric overlayer. The current densities of
were stressed in Al-1%Si thin film interconnection s under a D.C. condition. The peak current densities of
were also applied under a Pulsed D.C. condition at frequencies of 200KHz, 800KHz, 1MHz, and 4MHz with the duty factor of 0.5. THe time-to-failure under a Pulsed D.C.(
) was appeared to be larger than that under a D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition largely depends upon the appiled current densities respectively . This can be explained by a relaxation mechanism view due to a duty cycle under a Pulsed D.C. related to the wave on off. The relaxation phenomena during the pulsed off period result in the decayof excess vacancies generated in the Al-1%Si thin film interconnections because of the electrical and mechanical stress gradient . Hillocks and voids formed by an electromigration were observed by using a SEM (Scanning Electron Microscopy).
Suppression of surface
layer and Solid Phase Epitaxy of Si films Using heating-up under
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 239~244
We firstly report that formation of
layer on Si surface can be effectively prevented by flowing the
gas during the heating-up procedure for amorphous Si depositions. In this way, amorphously deposited Si layer onto crystalline Si substrates can be grown epitaxially during the post-deposition heat treatments. The suppression of surface
can be explained in terms of adsorption of SiHx adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing
flowing and soild phase epitaxial growth, high-quality epitaxial Si layer can be obtained at low temperatures below
without conventional high temperature cleaning procedures.
Thin Films Prepared by ICBD Method
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 245~250
thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around
and pressure of ~
Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of
were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition.
structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/
/Si sturcuture, leakage current was less than
at 7MV/cm strength.
Investigation of New Ionized Cluster Beam Source
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 251~257
The present paper represents the results of development and first experimental tests of a new ionized cluster beam (ICB) source. The novelty of ICB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell but are not divided in an electric circuit. The ICB source adapts permanent magnets to increase the ionization efficiency. The maximum obtained
ion current denisity is
, therewith the ionization rate amounts 3% under deposition rate is 0.2
/s and the acceleration voltage is 4 kV, the
ion beam uniformity is better than 95%.
The Study on Magnetioresistance in Fe[NiFe/Cu] Multilayers
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 258~262
We have investigated the changes in magnetoresistive characteristics, interfacial roughness, and preferred orientation with the Fe buffer layer thickness, annealing temperature, and the stacking number of layers variation in Fe/[NiFe/Cu] multilayers by using the 3-gun d.c. magnetron sputtering method. Intensity of the (200) orientation was increased with the increment of the Fe-buffer layer thickness. We found a maximum magnetoresistance ration of 4.7%, when the buffer layer thickness was 70
, and the field sensitivity also showed a maximum value at the same thickness. We varied the stacking number of multilayers with fixing the Fe buffer layer thickness of 70
. When the stacking number was 40 layers, maximum MR ratio(5.3%) was observed. With the variation of annealing temperature no change in the MR ratio was found beyond
. But decrement of MR ratio was observed above
. This decrement of the MR ratio was responsible for the increment of paramagnetic mixed layer caused by the diffusion of Cu layer and the change of antiferromagnetic coupling.
Reactive Ion Etching of Pt Thin Films
Journal of the Korean Vacuum Society, volume 5, issue 3, 1996, Pages 263~267
Reactive ion etching of Pt thinfilm was studied using
, Ar, and
. Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of
had little effect on the Pt etch rate. Addition of
had no effect on Pt etch rate up to 20%
Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300
/min was obtained at
flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.