Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 6, Issue 4 - Nov 1997
Volume 6, Issue S1 - Oct 1997
Volume 6, Issue 3 - Aug 1997
Volume 6, Issue 2 - May 1997
Volume 6, Issue 1 - Feb 1997
Selecting the target year
Characteristics study of the spinning rotor gauges
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 293~297
Using trace etching method in this study, we measure the energy of argon ions generated in VEBA System which is composed of Marx Generater and Pulse Forming Line. In this system the electron beam of 240 kV, 30 kA, 60 ns is generated. Argon ions are formed through the electron beam ionization of a gas cloud injected by a fast puff valve. Thus argon ions are accelerated into vacuum drift tube by a virtual cathode and seperated with electron beam, consequently, they heat the trace etching plates made of aluminum thin films. The energy of argon ions are determined by the number of aluminum thin films penetrated by the ions. This experimental value corresponds with the theoretical value.
Outgassing and thermal desorption measurement system for parts of CRT
Sin, Yong Hyeon ; Hong, Seung Su ; Mun, Seong Ju ; Seo, Il Hwan ; Jeong, Gwang Hwa ;
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 298~307
TDS(Thermal Desorption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and thermal desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 parts, vacuum chamber and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under
Pa. With the variable conductance system, the effective pumping speed of the chamber could be controlled from sub l/s to 100 l/s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to 600℃ within ±1℃ difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data and application on the CRT process analysis were shown.
Intercomparison of vacuum standards of Korea, United Kingdom, and Japan
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 308~313
TDS (Thermal Lkso~ption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and themla1 desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 pirrts. vacuum chamher and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under
Pa. With the variable conductance system, the effective pumping speed of the chamber could he controlled from sub 11s to 100 11s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to
$difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data ;ind application on the CRT process analysis were shown.
Interface characteristics of Cu/TiN system by XPS
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 314~320
A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.
Characterization of polymer surface of LCD blue color filters using SIMS, XPS and AFM
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 321~325
Recently, photosensitive color filters have received much attention for their use in the liquid crystal display (LCD) industry. It is well known that chemical and physical properties of polymer surfaces can be modified by special surface treatments. In this work, we have studied the polymer surfaces of LCD blue color filters which were exposed to the UV light during photolithography. A better understanding of the irradiated polymer surfaces is required for the subsequent processes such as plasma etching, ITO electrode deposition, etc. The surface analysis has been undertaken using secondary ion mass spectrometry (SIMS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). A significant enrichment of the pigment component and roughening of surface with bubble-like feature have been observed at the modified polymer surface.
Formation of ultra-shallow
junction through the control of ion implantation-induced defects in silicon substrate
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 326~336
From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow
-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation.
source/drain junctions have been formed by
ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing,
mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.
A study on the Mossbauer effect and optical properties of
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 337~342
We have investigated Mossbauer effect and emission properties of the Fe-doped GaAs grown by liquid phase epitaxy (LPE). The powder type of isotope
was used as a dopant source in LPE-GaAs. From the analysis of Mossbauer effect the value of isomer shift, 0.303
0.018 mm/sec, is calculated at low temperature. This means that charge state of Fe ion in GaAs is 3+. The results of double crystal x-ray rocking curve (DCRC) and low temperature photoluminescence (PL) show the crystal quality of the epitaxial layers are good. Unusual luminescence peaks from the Fe-GaAs epitaxial layers appeared at emission energy of 0.99 eV and 1.15 eV. We attribute these emissions to Fe-acceptor related two deep radiative centers.
The characteristics of
-InGaAs layer implanted with oxygen
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 343~347
The dependence of compensation mechanism in
-InGaAs layer implanted with oxygen on the annealing temperatures was investigated. The oxygen implantation was performed for electrical isolation. The conductivity was controlled by damage related traps below
. For the temperature of 500 to
, oxygen began to show the chemical effect of compensating the acceptors due to activation and type conversion (plongrightarrown-type) occurred at
. This indicates that the defects generated by the chemical activity of oxygen increased with increasing annealing temperature, where activation energy of 24.2 meV was obtained. It is attributed to the formation of native defects, such as In interstitials, acting as shallow donor in InGaAs. Above
, the interstitial Be atoms become reactivated and the n-type conductivity decreases.
Effect of substrate bias voltage on a-C:H film
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 348~353
Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage (
) was employed from
. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of
, but the hydrogen content of the film was increased with the increase of
. The a-C:H films deposited at the lowest
contain the smallest amount of hydrogen with most of C-H bonds in the of
configuration, whereas the films produced at higher
reveal dominant the
bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at
=200 V. With
lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of
. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of
. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at
=0V to 2.3 eV at
=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.
Crystal properties of wurtzite GaN grown under various nitrogen plasma conditions
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 354~358
Crystal properties of wurtzite GaN films grown on
(0001) substrates under various nitrogen pressure and plasma power by electron cyclotron resonance molecular beam epitaxy were investigated by full width at half maximum of X-ray diffraction peak and scanning electron microscope. It was found that the nitrogen pressure has a large effect on the FWHM value of XRD, and the GaN film grown under the optimum nitrogen pressure contains high density of dislocations. These results suggest that the crystal quality is sensitive to the plasma source conditions and that the relaxation of stress depends of V/III ratio. However, substrate-surface nitridation has little effect on the relaxation of misfit stress.
A study of photoreflectance on the surface characteristics in n-GaAs treated with Ar plasma
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 359~363
We have investigated the surface characteristics of n-GaAs (100) treated with Ar plasma (40 W, 5~120 sec) by photoreflectance (PR) measurement. With increasing Ar plasma treatment time, the intensity of
peak observed to the minimum at 5 sec. The surface electric field (
), net carrier concentration (
), and surface state density (
, respectively. These values were about 57.1, 81.4 and 56.9% smaller than those of bulk n-GaAs. On the other hand, the concentration of compensation centers (
) was maximum with value of
at 5 sec. And penetration depth of defects generated after treated with Ar plasma was about 450
Characteristics of silicon etching related to
for trench formation
Journal of the Korean Vacuum Society, volume 6, issue 4, 1997, Pages 364~371
Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-
. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-
additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-
plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-
plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-
additive gases instead of
gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).