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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Vacuum Society
Journal Basic Information
Journal DOI :
The Korean Vacuum Society
Editor in Chief :
Volume & Issues
Volume 7, Issue 4 - Nov 1998
Volume 7, Issue 3 - Aug 1998
Volume 7, Issue s1 - Jul 1998
Volume 7, Issue 2 - May 1998
Volume 7, Issue 1 - Feb 1998
Selecting the target year
A Study of Epitaxial Growth on the Clean and Surfactant (Sn) Adsorbed Surface of Ge(111)
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 77~81
The eptiaxial growth of Ge on the clean and surfactant (Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24 ML at the substrate temperature of
. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be
. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity osicillation was very stable and periodic up to 38 ML, and the d2
2 structure was not charged with continued adsorption of Ge at the substrate temperature of 2002
2. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface.
Characterizations of Oxide Film Grown by
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 82~87
In the oxidation process of the
oxidation method, adding
gas, the detected outlet gases in the reaction quartz chamber are N2,
and in addition, a very small quantity of
, NO and
are detected. Two kinds of species (
and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and
gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that
oxide film has a certain stoichiomerty of
, this oxidation method restrains the generation of defects in the
interface, minimizing fixed charges. The breakdown voltage of
oxide film (470
) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.
Fabrication of silicon field emitter array using chemical-mechanical-polishing process
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 88~93
The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1
m and the end radius of the tips was smaller than 100
. The emission current meaured from the fabricated 2809 tips array was about 31
A at a gate voltage of 80 V.
Bias effect for diamond films deposited by HFCVD method
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 94~103
We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%,
respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.
Effects of growth interruption on the photoluminescence characteristics of InGaAs/InP quantum wells
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 104~111
The InGaAs/InP quantum wells(QWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of growth interruption steps on their interfacial structures were investigated by measuring photoluminescence spectra. When InP or InGaAs surface was treated under the same group V ambient, the full width at half maximum (FWHM) of the QW peak increased possibly due to the incorporation of impurities during the growth interruption time. When InP surface was treated under
, howerer, the PL peak showed red-shift due to the As-P exchange reaction and the change of FWHM was not remarkable. The effective thickness of InAs interfacial layer formed during
, treatment on the InP surface was calculated to be 1~2 monolayers. In the case of InGaAs treatment under
, the PL peak energy and the FWHM increasied. This results suggest that
treatment on the InGaAs surface suppresses the incorporation of As into the subsequent InP layer and the local replacement of As by P occurs simultaneously.
The study of Grain boundary diffusion effect in Tin/Cu by Xps
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 112~117
TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy,
was 0.23 eV, and the diffusivity,
Improvement of semiconductor contact hole filling of Copper by ionized cluster beam deposition technique
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 118~126
A study to improve filling of semiconductor contact holes by enhancement of the directionality of the source beams has been undertaken. The collimation of source beams was improved by the ionized cluster beam deposition technique with modification of the cell geometry. The collimation tested with neutral beam was excellent. But, the Cu flims were grown in a columnar mode due to the lack of surface mobilit of the impinged clusters. A shadow effect also caused cleavage and consequent discontinuity at the steos as films grow. By applying acceleration voltage, the columnar growth in a contact hole of 0.5
m diameter and 1
m height disappeared and considerable coverage at the side wall of the contacts as well as perfect bottom coverage were observed. These are all due to the assistants of the accelerated ionized clusters with high kinetic energy. Thus we demonstrated that the ICB deposition technique can be used to completely fill sub-half-micron contact holes with high aspect ratio.
Effect of additional gases on the Color of TixN Coated Film
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 127~134
Stainless steel is being used widely for various purposes due to its good corrosion resistance. There has been much research to produce a colored and corrosion-resistant stainless steel by several methods to use in decorating. In this experiment, we coated TiN(C,O,H)films on the SUS304 substrates with the DC magnetron sputtering system and then studied the texture and color of the films as a function of additional gases being inserted into the system. A (220) texture of TixN film changed to (200) by the addition of either hydrogen or the acetylene and changed further to (111) with an increase of the additional acetylene content. The addition of oxygen gas changed from the texture(220) to (111) to (200). The color of the TixN film changed from gold to gray to green with the increase of the content by the addition of oxygen gas, while it changed to pink and finally to gray with the increased of the content by the addition of acetylene gas. Reflectance increased in the region of short wavelength by the addition of hydrogen, but decreased with the increase of the oxygen and the acetylene content.
Study on the Cu/Polyimide interface using XPS: Initial growth of Cu sputter-deposited on the polyimide at high temperature (II)
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 135~140
We investigated the initial growth mode of Cu deposited on polyimide at high temperature(
) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.
Characteristics of PECVD-W thin films deposited on
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 141~149
The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~
, W films had the deposition rate of 150~530
/min and stress of 0.85~
at various substrate temperatures and
flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.
films on Crystalline Silicon
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 150~154
Photoluminescence(PL), XRD, TEM results
films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400
peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.
Effects of Gas Chemistries on Poly-Si Plasma Etching with I-Line and DUV Resist
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 155~160
It is necessary to use Arc layer and DUV resist to define 0.25
line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries;
/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using
gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using
/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.
Reactive Ion Etching of InP Using
Inductively Coupled Plasma
Journal of the Korean Vacuum Society, volume 7, issue 2, 1998, Pages 161~168
Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15%
, 7.5 mTorr, and 14 cm distance, resulting in about 3
/hr etch rate with smooth surfaces and vertical mesa sidewalls.